MOTOROLA M4N26

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by M4N26/D
SEMICONDUCTOR TECHNICAL DATA
STYLE 1 PLASTIC
The M4N26 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
6
Applications
1
• General Purpose Switching Circuits
STANDARD THRU HOLE
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays
SCHEMATIC
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
1
6
2
5
3
4
INPUT LED
Reverse Voltage
VR
3
Volts
Forward Current — Continuous
IF
60
mA
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
PD
100
mW
1.41
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
VCEO
30
Volts
Emitter–Collector Voltage
VECO
7
Volts
Collector–Base Voltage
VCBO
70
Volts
Collector Current — Continuous
IC
50
mA
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
PD
150
mW
1.76
mW/°C
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
2.94
mW
mW/°C
Ambient Operating Temperature Range(2)
TA
– 55 to +100
°C
Tstg
– 55 to +150
°C
TL
260
°C
PIN 1.
2.
3.
4.
5.
6.
LED ANODE
LED CATHODE
N.C.
EMITTER
COLLECTOR
BASE
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Storage Temperature Range(2)
Soldering Temperature (10 sec, 1/16″ from case)
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
Motorola
Device Data
 Motorola,
Inc.Optoelectronics
1997
1
M4N26
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Symbol
Min
Typ(1)
Max
Unit
VF
—
—
—
1.15
1.3
1.05
1.5
—
—
Volts
Reverse Leakage Current (VR = 3 V)
IR
—
—
100
µA
Capacitance (V = 0 V, f = 1 MHz)
CJ
—
18
—
pF
Collector–Emitter Dark Current
(VCE = 10 V, TA = 25°C)
ICEO
—
1
50
nA
(VCE = 10 V, TA = 100°C)
ICEO
—
1
—
µA
ICBO
—
0.2
—
nA
Collector–Emitter Breakdown Voltage (IC = 1 mA)
V(BR)CEO
30
45
—
Volts
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
70
100
—
Volts
Emitter–Collector Breakdown Voltage (IE = 100 µA)
V(BR)ECO
7
7.8
—
Volts
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0)
CCE
—
7
—
pF
Collector–Base Capacitance (f = 1 MHz, VCB = 0)
CCB
—
19
—
pF
Emitter–Base Capacitance (f = 1 MHz, VEB = 0)
CEB
—
9
—
pF
IC (CTR)(2)
2 (20)
7 (70)
—
mA (%)
VCE(sat)
—
0.15
0.5
Volts
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
ton
—
2.8
—
µs
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
Characteristic
INPUT LED
Forward Voltage (IF = 10 mA)
TA = 25°C
TA = –55°C
TA = 100°C
OUTPUT TRANSISTOR
Collector–Base Dark Current (VCB = 10 V)
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 50 mA)
toff
—
4.5
—
µs
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
tr
—
2
—
µs
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)
tf
—
2
—
µs
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
VISO
7500
—
—
Vac(pk)
Isolation Resistance (V = 500 V)(4)
RISO
1011
—
—
Ω
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
CISO
—
0.2
—
pF
1.
2.
3.
4.
2
Always design to the specified minimum/maximum electrical limits (where applicable).
Current Transfer Ratio (CTR) = IC/IF x 100%.
For test circuit setup and waveforms, refer to Figure 14.
For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Motorola Optoelectronics Device Data
M4N26
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25°C
CTRCE(sat) VCE = 0.4 V
1.3
TA = –55°C
NCTR, NORMALIZED CTR
V F , FORWARD VOLTAGE (V)
1.4
1.2
1.1
TA = 25°C
1.0
TA = 85°C
0.9
1.0
NCTR
NCTR(sat)
0.5
TA = 25°C
0.8
0.7
0
0.1
10
1.0
100
1.0
0
IF, FORWARD CURRENT (mA)
100
IF, LED CURRENT (mA)
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non–Saturated and
Saturated CTR, TA = 25°C vs. LED Current
1.5
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25°C
CTRCE(sat) VCE = 0.4 V
1.0
NCTR
NCTR, NORMALIZED CTR
NCTR, NORMALIZED CTR
10
TA = 50°C
NCTR(sat)
0.5
0
0.1
10
1.0
100
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25°C
CTRCE(sat) VCE = 0.4 V
1.0
NCTR
TA = 70°C
NCTR(sat)
0.5
0
0.1
1.0
IF, LED CURRENT (mA)
10
100
IF, LED CURRENT (mA)
Figure 3. Normalized Non–Saturated and Saturated
CTR, TA = 50°C vs. LED Current
Figure 4. Normalized Non–Saturated and Saturated
CTR, TA = 70°C vs. LED Current
NCTR, NORMALIZED CTR
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25°C
CTRCE(sat) VCE = 0.4 V
1.0
NCTR
TA = 85°C
NCTR(sat)
0.5
0
0.1
1.0
10
100
IF, LED CURRENT (mA)
Figure 5. Normalized Non–Saturated and Saturated
CTR, TA = 85°C vs. LED Current
Motorola Optoelectronics Device Data
3
M4N26
105
35
30
ICEO , COLLECTOR–EMITTER (nA)
ICE , COLLECTOR CURRENT (mA)
25°C
50°C
25
20
85°C
15
70°C
10
5.0
10
20
30
40
50
103
VCE = 10 V
102
101
TYPICAL
100
10–1
10–2
–20
0
0
104
60
40
60
80
100
TA, AMBIENT TEMPERATURE (°C)
IF, LED CURRENT (mA)
Figure 6. Collector–Emitter Current
vs. Temperature and LED Current
Figure 7. Collector–Emitter Leakage
Current vs. Temperature
1.5
10
NORMALIZED TO:
IF = 10 mA
VCB = 9.3 V
TA = 25°C
1.0
0.5
NORMALIZED PHOTOCURRENT
NCTR CB, NORMALIZED CTR CB
20
0
25°C
50°C
70°C
0
NORMALIZED TO:
IF = 10 mA
TA = 25°C
–20°C
25°C
1.0
70°C
50°C
0.1
0.01
0.1
10
1.0
100
0.1
1.0
10
IF, LED CURRENT (mA)
IF, LED CURRENT (mA)
Figure 8. Normalized CTRcb vs. LED
Current and Temperature
Figure 9. Normalized Photocurrent vs.
lF and Temperature
100
1.2
NORMALIZED TO:
VCE = 10 V
IB = 20 mA
TA = 25°C
NH FE , NORMALIZED H FE
70°C
1.0
50°C
25°C
–20°C
0.8
0.6
0.4
1.0
10
100
1000
IB, BASE CURRENT (mA)
Figure 10. Normalized Non–Saturated HFE vs. Base
Current and Temperature
4
Motorola Optoelectronics Device Data
M4N26
2.5
1000
50°C
1.0
25°C
–20°C
0.5
TA = 25°C
IF = 10 mA
VCC = 5.0 V
VTH = 1.5 V
tpHL
100
tp HL , PROPAGATION DELAY ( m s)
70°C
NORMALIZED TO:
VCE = 10 V
IB = 20 mA
TA = 25°C
tp LH , PROPAGATION DELAY ( m s)
NHFE(sat) , NORMALIZED SATURATED H FE
1.5
2.0
1.5
10
tpLH
VCE = 0.4 V
0
1.0
1.0
10
100
0.1
1000
1.0
10
1.0
100
RL, COLLECTOR LOAD RESISTOR (KW)
IB, BASE CURRENT (mA)
Figure 11. Normalized HFE vs. Base Current
and Temperature
Figure 12. Propagation Delay vs. Collector
Load Resistor
IF
tD
tR
VO
tPLH
VTH = 1.5 V
tPHL
tS
tF
Figure 13. Switching Timing
VCC = 5.0 V
F = 10 KHz
DF = 50%
RL
VO
IF = 10 mA
Figure 14. Switching Schematic
Motorola Optoelectronics Device Data
5
M4N26
Package Dimensions in Inches (mm)
3
2
1
4
5
6
PIN ONE
ID.
0.248 (6.30)
0.256 (6.50)
ANODE
1
6
BASE
CATHODE
2
5
COLLECTOR
NC
3
4
EMITTER
0.335 (8.50)
0.343 (8.70)
0.300 (7.62)
typ.
0.039 (1.00)
min.
0.130 (3.30)
0.138 (3.50)
4_ typ.
0.018 (0.45)
0.022 (0.55)
0.031 (0.80)
min.
0.031 (0.80)
0.035 (0.90)
0.010 (0.25)
typ.
18_ typ.
0.114 (2.90)
0.130 (3.30)
0.300 (7.62)
0.347 (8.82)
0.100 (2.54) typ.
6
Motorola Optoelectronics Device Data
M4N26
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Motorola Optoelectronics Device Data
7
M4N26
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8
◊
M4N26/D
Motorola Optoelectronics Device
Data