Schottky Barrier Diodes (SBD) MA2J728 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For wave detection circuit 1 0.7 ± 0.1 + 0.1 0.16 − 0.06 2 0.4 ± 0.1 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.25 ± 0.1 • Sealed in the S-mini (2-pin) mold and super small type • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Extremely low reverse current IR • Small temperature coefficient of forward characteristic 0.3 0.5 ± 0.1 ■ Features A 0.625 K Symbol Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V Peak forward current IFM 150 mA Forward current (DC) IF 30 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2A ■ Electrical Characteristics Ta = 25°C Parameter Symbol Reverse current (DC) Forward voltage (DC) VR = 30 V Min Typ Max Unit 300 nA VF1 IF = 1 mA 0.4 V VF2 IF = 30 mA 1.0 V Ct VR = 1 V, f = 1 MHz 1.5 pF trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns η Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Terminal capacitance Reverse recovery Conditions IR time* Detection efficiency Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias Applicaiton Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω 1 MA2J728 Schottky Barrier Diodes (SBD) IF V F − 20°C 10 1 10−1 10−2 1.0 103 0.8 102 IF = 30 mA 0.6 10 mA 0.4 1 mA 0.2 0 0.2 0.4 0.6 0.8 1.0 0 −40 1.2 Forward voltage VF (V) Ct VR 40 80 120 160 200 IR T a Reverse current IR (µA) Terminal capacitance Ct (pF) f = 1 MHz Ta = 25°C 102 2.0 1.5 1.0 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 VR = 30 V 10 V 1V 10 1 10−1 0.5 30 10−2 −40 0 40 80 120 160 Ambient temperature Ta (°C) 75°C 1 25°C 0 5 10 15 20 25 Reverse voltage VR (V) 103 2.5 10 10−2 0 Ta = 125°C 10−1 Ambient temperature Ta (°C) 3.0 Reverse current IR (µA) Forward current IF (mA) Ta = 125°C Forward voltage VF (V) 75°C 25°C 102 IR VR VF Ta 103 200 30