MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC212 Series MAC212A Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes (MAC212A Series) TRIACs 12 AMPERES RMS 200 thru 800 VOLTS MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4, MAC212A4 MAC212-6, MAC212A6 MAC212-8, MAC212A8 MAC212-10, MAC212A10 On-State Current RMS (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range Symbol Value VDRM Unit Volts 200 400 600 800 IT(RMS) 12 Amp ITSM 100 Amp I2t 40 A2s PGM 20 Watts PG(AV) 0.35 Watt IGM 2 Amp TJ –40 to +125 °C Tstg –40 to +150 °C 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data 3–83 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 2.1 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Typ Max Unit — — — — 10 2 µA mA — 1.3 1.75 Volts IDRM Peak On-State Voltage (Either Direction) ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle VTM p 2% Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT mA — — — — 12 12 20 35 50 50 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) IH — 6 50 mA Turn-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) tgt — 1.5 — µs dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION PD(AV), AVERAGE POWER DISSIPATION (WATT) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C) Min 125 115 α = 30° 105 60° 90° α 95 α 85 180° dc α = CONDUCTION ANGLE 75 0 2.0 4.0 6.0 8.0 10 IT(RMS), RMS ON-STATE CURRENT (AMP) 3–84 12 14 28 24 α 20 α dc α = 180° 90° 60° 30° α = CONDUCTION ANGLE 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP) Motorola Thyristor Device Data FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT 100 ITSM , PEAK SURGE CURRENT (AMP) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 50 20 10 5.0 TJ = 25°C TJ = 125°C 2.0 80 60 CYCLE 40 TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 20 0 1.0 1.0 2.0 3.0 5.0 10 7.0 NUMBER OF CYCLES 0.5 0.2 FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) FIGURE 7 — TYPICAL HOLDING CURRENT 2.8 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) FIGURE 6 — TYPICAL GATE TRIGGER CURRENT 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 TC, CASE TEMPERATURE (°C) Motorola Thyristor Device Data 60 80 2.4 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.0 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) 3–85 FIGURE 8 – THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) 3–86 Motorola Thyristor Device Data