MOTOROLA Order this document by MAC218/D SEMICONDUCTOR TECHNICAL DATA MAC218 Series MAC218A Series Triacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. TRIACs 8 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • Glass Passivated Junctions for Greater Parameter Uniformity and Stability • TO-220 Construction Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Three Modes (MAC218 Series) or Four Modes (MAC218A Series) MT2 MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = 25 to 125°C) Symbol Value VDRM Volts 200 400 600 800 MAC218-4, MAC218A4 MAC218-6, MAC218A6 MAC218-8, MAC218A8 MAC218-10, MAC218A10 On-State Current RMS (Conduction Angle = 360°, TC = +80°C) Unit IT(RMS) 8 Amps ITSM 100 Amps I2t 40 A2s PGM 16 Watts Average Gate Power (TC = +80°C, t = 8.3 ms) PG(AV) 0.35 Watt Peak Gate Trigger Current (Pulse Width = 1 µs) IGTM 4 Amps TJ –40 to +125 °C Tstg –40 to +150 °C Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C, preceded and followed by rated current) Fusing Current (t = 8.3 ms) Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Operating Junction Temperature Range Storage Temperature Range 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RθJC 2.2 °C/W Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Blocking Current (V D = Rated VDRM , gate open) Symbol VTM t 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 12Ω) Trigger Mode MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–) MT2(–), Gate(+) “A” SUFFIX ONLY IGT Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) “A” SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY VGT Critical Rate of Rise of Commutating Off-State Voltage (VD = Rated VDRM, ITM = 11.3 A, Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TJ = 125°C) P(AV), AVERAGE POWER DISSIPATION (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 125 115 105 95 85 75 3.0 4.0 5.0 6.0 IT(RMS), RMS ON STATE CURRENT (AMPS) 2 Unit — — — — 10 2 µA mA — 1.7 2 Volts mA 7.0 — — 50 75 Volts — — — — 0.9 0.9 1.1 1.4 2 2 2 2.5 0.2 0.2 — — — — IH — — 50 mA dv/dt(c) — 5 — V/µs dv/dt — 100 — V/µs FIGURE 2 — POWER DISSIPATION FIGURE 1 — CURRENT DERATING 2.0 Max — — Holding Current (Either Direction) (VD = 24 Vdc, Gate Open, Initiating Current = 200 mA) 1.0 Typ IDRM T J = 25°C TJ = 125°C Peak On-State Voltage (Either Direction) (ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 0 Min 8.0 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS) RMS ON STATE CURRENT (AMPS) Motorola Thyristor Device Data 5.0 OFF-STATE VOLTAGE = 12 V 3.0 2.0 1.0 QUADRANT 1 2 3 4 0.7 0.5 –60 –40 –20 0 20 40 60 80 100 120 140 VGT , NORMALIZED GATE TRIGGER VOLTAGE (VOLTS) FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT FIGURE 4 — NORMALIZED GATE TRIGGER VOLTAGE 1.8 OFF-STATE VOLTAGE = 12 V 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 QUADRANTS 0.6 0.4 –60 1 2 3 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) FIGURE 5 — NORMALIZED HOLDING CURRENT I H , NORMALIZED HOLDING CURRENT (mA) IGT, NORMALIZED GATE TRIGGER CURRENT (mA) 2.0 GATE OPEN MAIN TERMINAL #1 POSITIVE 1.0 0.7 0.5 MAIN TERMINAL #2 POSITIVE 0.3 0.2 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data 3 PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A STYLE 4: PIN 1. 2. 3. 4. U 1 2 3 H K MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 Z R L V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MAC218/D* MAC218/D