DA9179.002 19 May, 2005 MAS9179 AM Receiver IC • Tri Band Receiver IC • High Sensitivity • Very Low Power Consumption • Wide Supply Voltage Range • Power Down Control • Control for AGC On • High Selectivity by Crystal Filter • Fast Startup Feature DESCRIPTION The MAS9179 AM-Receiver chip is a highly sensitive, simple to use AM receiver specially intended to receive time signals in the frequency range from 40 kHz to 100 kHz. Only a few external components are required for time signal receiving. The circuit has preamplifier, wide range automatic gain control, demodulator and output comparator built in. The output signal can be processed directly by an additional digital circuitry to extract the data from the received signal. The control for AGC (automatic gain control) can be used to switch AGC on or off if necessary. MAS9179 supports tri band operation by switching between three crystal filters and two additional antenna tuning capacitors. FEATURES APPLICATIONS • • • • • • • • • • Tri Band Receiver IC Highly Sensitive AM Receiver, 0.4 µVRMS typ. Wide Supply Voltage Range from 1.1 V to 5 V Very Low Power Consumption Power Down Control Fast Startup Only a Few External Components Necessary Control for AGC On Wide Frequency Range from 40 kHz to 100 kHz High Selectivity by Quartz Crystal Filter MAS9179 has differential input and different internal compensation capacitor options for compensating shunt capacitances of different crystals (See ordering information on page 9). • Multi Band Time Signal Receiver WWVB (USA), JJY (Japan), DCF77 (Germany), MSF (UK), HGB (Switzerland) and BPC (China) BLOCK DIAGRAM QO3 RFIP QO2 QO1 AON QI AGC Amplifier Demodulator & Comparator OUT RFIM RFI2 RFI3 Power Supply/Biasing VDD VSS PDN1 PDN2 AGC DEC 1 (9) DA9179.002 19 May, 2005 PAD LAYOUT VDD VSS QO2 RFI2 QO1 RFIM QO3 RFIP QI RFI3 AGC PDN1 PDN2 AON OUT 1892 µm MAS9179Ax, x=1..4 DEC 1620 µm DIE size = 1.62 x 1.89 mm; round PAD ∅ 80 µm Note: Because the substrate of the die is internally connected to VDD, the die has to be connected to VDD or left floating. Please make sure that VDD is the first pad to be bonded. Pick-and-place and all component assembly are recommended to be performed in ESD protected area. Note: Coordinates are pad center points where origin has been located in bottom-left corner of the silicon die. Pad Identification Name X-coordinate Y-coordinate Power Supply Voltage Quartz Filter Output for Crystal 2 Quartz Filter Output for Crystal 1 Quartz Filter Output for Crystal 3 Quartz Filter Input for Crystals AGC Capacitor Power Down/Frequency Selection Input 2 Receiver Output Demodulator Capacitor AGC On Control Power Down/Frequency Selection Input 1 Receiver Input 3 (for Antenna Capacitor 3) Positive Receiver Input Negative Receiver Input Receiver Input 2 (for Antenna Capacitor 2) Power Supply Ground VDD QO2 QO1 QO3 QI AGC PDN2 OUT DEC AON PDN1 RFI3 RFIP RFIM RFI2 VSS 174 µm 174 µm 174 µm 174 µm 174 µm 174 µm 174 µm 175 µm 1442 µm 1442 µm 1442 µm 1442 µm 1442 µm 1442 µm 1442 µm 1442 µm 1657 µm 1452 µm 1248 µm 1043 µm 839 µm 634 µm 429 µm 225 µm 240 µm 444 µm 649 µm 853 µm 1058 µm 1262 µm 1467 µm 1671 µm Note 3 1 2 3 4 4 Notes: 1) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced (modulated) - the output is a current source/sink with |IOUT| > 5 µA - at power down the output is pulled to VSS (pull down switch) 2) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working) - Internal pull-up with current < 1 µA which is switched off at power down 3) PDN1 = VDD and PDN2 = VDD means receiver off - Fast start-up is triggered when the receiver is after power down controlled to power up 4) Receiver inputs RFIP and RFIM have both 600 kΩ biasing MOSFET-transistors towards ground 2 (9) DA9179.002 19 May, 2005 FREQUENCY SELECTION The frequency selection and power down control is accomplished via two digital control pins PDN1 and PDN2. The control logic is presented in table 1. Table 1 Frequency selection and power down control PDN2 RFI2 Switch RFI3 Switch PDN1 Selected Crystal Output Description Power down Frequency 1 Frequency 2, RFI2 capacitor connected in parallel with antenna Frequency 3, RFI2 and RFI3 capacitors connected in parallel with antenna High High Low High Low High Open Open Closed Open Open Open QO1 QO2 Low Low Closed Closed QO3 The internal antenna tuning capacitor switches (RFI2, RFI3) and crystal filter output switches (QO1, QO2, QO3) are controlled according table 1. See switches in block diagram on page 1. If frequency 1 is selected the RFI2 and RFI3 switches are open and only crystal output QO1 is active. Antenna frequency is determined by antenna inductor LANT (see Typical Application on page 5), antenna capacitor CANT1 and parasitic capacitances related to antenna inputs RFIP, RFIM, RFI2 and RFI3 (see Antenna Tuning Considerations below). Frequency 1 is the highest frequency of the three selected frequencies. If frequency 2 is selected then RFI2 switch is closed to connect CANT2 to pin RFIM in parallel with ferrite antenna and tune it to frequency 2. Then only crystal output QO2 is active. Frequency 2 is the medium frequency of the three selected frequencies. If frequency 3 is selected both RFI2 and RFI3 switches are closed to connect both CANT2 and CANT3 capacitors to RFIM pin in parallel with ferrite antenna and tune it to frequency 3. Then only crystal QO3 is active. Frequency 3 is the lowest frequency of the three selected frequencies. It is recommended to switch the device to power down for 50ms before switching to another frequency. This guarantees fast startup in switching to another frequency. The 50ms power down period is used to discharge AGC capacitor and to initialize fast startup conditions. 3 (9) DA9179.002 19 May, 2005 ANTENNA TUNING CONSIDERATIONS The ferrite bar antenna having inductance LANT and parasitic coil capacitance CCOIL is tuned to three reception frequencies f1, f2 and f3 by parallel capacitors CANT1, CANT2 and CANT3. The receiver input stage and internal antenna capacitor switches have capacitances CRFIP, COFF2, COFF3 which affect the resonance frequencies. COFF2 and COFF3 are switch capacitances when switches are open. When switches are closed these capacitances are shorted by on resistance of the switches and they are effectively eliminated. Following relationships can be written into three tuning frequencies. Frequency f1 (highest frequency): CTOT1=CCOIL+CANT1+CRFIP+COFF2+COFF3=CCOIL+CANT1+6pF+37pF+119pF=CCOIL+CANT1+162pF, 1 f1 = 2π L ANT ⋅ CTOT 1 Frequency f2 (middle frequency): CTOT2=CCOIL+CANT1+CANT2+CRFIP+COFF3=CCOIL+CANT1+CANT2+ 6pF+119pF=CCOIL+CANT1+CANT2+ 125pF, 1 f2 = 2π L ANT ⋅ CTOT 2 Frequency f3 (lowest frequency): CTOT3=CCOIL+CANT1+ CANT2+ CANT3+CRFIP=CCOIL+CANT1+ CANT2+ CANT3+6pF, 1 f3 = 2π L ANT ⋅ CTOT 3 4 (9) DA9179.002 19 May, 2005 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Supply Voltage Input Voltage Power Dissipation Operating Temperature Storage Temperature VDD-VSS VIN PMAX TOP TST Conditions Min Max Unit -0.3 VSS-0.3 6 VDD+0.3 100 +85 +150 V V mW o C o C -40 -55 ELECTRICAL CHARACTERISTICS Operating Conditions: VDD = 1.4V, Temperature = 25°C Parameter Operating Voltage Current Consumption Stand-By Current Input Frequency Range Minimum Input Voltage Maximum Input Voltage Receiver Input Resistance Receiver Input Capacitance RFI2 Switch On Resistance RFI2 Switch Off Capacitance RFI3 Switch On Resistance RFI3 Switch Off Capacitance Input Levels |lIN|<0.5 µA Output Current VOL<0.2 VDD;VOH >0.8 VDD Output Pulse Symbol VDD IDD IDDoff fIN VIN min VIN max RRFI CRFI RON2 COFF2 RON3 COFF3 VIL VIH |IOUT| T100ms T200ms T500ms T800ms Startup Time TStart Output Delay Time TDelay Conditions Min Typ 1.10 VDD=1.4 V, Vin=0 µVrms VDD=1.4 V, Vin=20 mVrms VDD=3.6 V, Vin=0 µVrms VDD=3.6 V, Vin=20 mVrms 31 27 64 37 67 40 40 0.4 Max Unit 5 V µA 91 65 0.1 100 1 20 f=40kHz..77.5 kHz 230 6 3.8 37 2.4 119 VDD=1.4 V VDD=1.4 V 0.2 VDD 0.8 VDD 5 1 µVrms ≤ VIN ≤ 20 mVrms 1 µVrms ≤ VIN ≤ 20 mVrms 1 µVrms ≤ VIN ≤ 20 mVrms 1 µVrms ≤ VIN ≤ 20 mVrms Fast Start-up, Vin=0.4 µVrms Fast Start-up, Vin=20 mVrms µA kHz µVrms mVrms kΩ pF Ω pF Ω pF V µA 50 140 ms 150 230 ms 400 500 600 ms 700 800 900 ms 1.3 3.5 50 s 100 ms 5 (9) DA9179.002 19 May, 2005 TYPICAL APPLICATION X3 X2 Note 1 Optional Control for AGC on/hold X1 QO3 CANT1 LANT CANT3 CANT2 QO2 QO1 AON QI Demodulator & Comparator RFIP AGC Amplifier OUT Receiver Output RFIM Ferrite Antenna RFI2 Power Supply/Biasing VSS PDN1 PDN2 VDD RFI3 DEC AGC + CAGC VBATTERY Power Down / Fast Startup / Frequency Selection Figure 1 CDEC Note 2 Application circuit of tri band receiver MAS9179 X3 40.003 kHz X2 60.003kHz X1 77.503kHz QO3 LANT 3.07mH CANT1 1.2nF Ferrite Antenna CANT3 0.91nF CANT2 3nF QO2 QO1 Optional Control for AGC on/hold AON QI RFIP AGC Amplifier Demodulator & Comparator OUT Receiver Output RFIM RFI2 RFI3 Power Supply/Biasing VDD VSS PDN1 PDN2 AGC DEC + CAGC 10 µF 1.4 V CDEC 47 nF Power Down / Fast Startup / Frequency Selection Figure 2 Example circuit of tri band receiver MAS9179 for DCF77/MSF/WWVB/JJY frequencies 6 (9) DA9179.002 19 May, 2005 TYPICAL APPLICATION (Continued) Note 1: Crystals The crystals as well as ferrite antenna frequencies are chosen according to the time-signal system (Table 2). The crystal shunt capacitance C0 should be matched as well as possible with the internal shunt capacitance compensation capacitor CC of MAS9179. See Compensation Capacitance Options on table 3. Table 2 Time-Signal System Frequencies Time-Signal System Location Antenna Frequency Recommended Crystal Frequency DCF77 HGB MSF WWVB JJY BPC 77.5 kHz 75 kHz 60 kHz 60 kHz 40 kHz and 60 kHz 68.5 kHz 77.503 kHz 75.003 kHz 60.003 kHz 60.003 kHz 40.003 kHz and 60.003 kHz 68.505 kHz Germany Switzerland United Kingdom USA Japan China Table 3 Compensation Capacitance Options Crystal Description Device CC MAS9179A1 MAS9179A2 MAS9179A3 MAS9179A4 0.75 pF 0.875 pF 1.25 pF 1.5 pF For low C0 crystal For low C0 crystal For high C0 crystal For high C0 crystal It should be noted that grounded crystal package has reduced shunt capacitance. This value is about 85% of floating crystal shunt capacitance. For example crystal with 1pF floating package shunt capacitance can have 0.85pF grounded package shunt capacitance. PCB traces of crystal and external compensation capacitance should be kept at minimum to minimize additional parasitic capacitance which can cause capacitance mismatching. Highest frequency crystal is connected to crystal output pin 1 (QO1). Medium frequency crystal is connected to crystal output pin 2 (QO2). Lowest frequency crystal is connected to crystal output pin 3 (QO3). The other pin of each crystal is connected to common crystal input pin QI. Table 4 below presents some crystal manufacturers having suitable crystals for timesignal receiver application. Table 4. Crystal Manufacturers and Crystal Types in Alphaphetical Order for Timesignal Receiver Application Manufacturer Crystal Type Dimensions Web Link Citizen Epson KDS Daishinku Microcrystal Seiko Instruments CFV-206 C-2-Type C-4-Type DT-261 MX1V-L2N MX1V-T1K VTC-120 ø 2.0 x 6.0 ø 1.5 x 5.0 ø 2.0 x 6.0 ø 2.0 x 6.0 ø 2.0 x 6.0 ø 2.0 x 8.1 ø 1.2 x 4.7 http://www.citizen.co.jp/tokuhan/quartz/ http://www.epsondevice.com/e/ http://www.kdsj.co.jp/english.html http://www.microcrystal.com/ http://speed.sii.co.jp/pub/compo/quartz/topE.jsp Note 2: AGC Capacitor The AGC and DEC capacitors must have low leakage currents due to very small signal currents through the capacitors. The insulation resistance of these capacitors should be at minimum 100 MΩ. Also probes with at least 100 MΩ impedance should be used for voltage probing of AGC and DEC pins. DEC capacitor can be low leakage chip capacitor. 7 (9) DA9179.002 19 May, 2005 MAS9179 SAMPLES IN SBDIL 20 PACKAGE NC 1 20 VSS 19 RFI2 18 RFIM VDD 2 QO2 3 NC 6 QI 7 AGC 8 17 RFIP 9179Az YYWW XXXXX.X QO1 4 QO3 5 16 RFI3 15 NC 14 PDN1 13 AON PDN2 9 12 DEC 11 NC OUT 10 Top Marking Definitions: YYWW = Year Week XXXXX.X = Lot Number z = Sample Version Number PIN DESCRIPTION Pin Name Pin NC VDD QO2 QO1 QO3 NC QI AGC PDN2 OUT NC DEC AON PDN1 NC RFI3 RFIP RFIM RFI2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Type Function Note P AO AO AO Positive Power Supply Quartz Filter Output for Crystal 2 Quartz Filter Output for Crystal 1 Quartz Filter Output for Crystal 3 AI AO DI DO Quartz Filter Input for Crystal AGC Capacitor Power Down/Frequency Selection Input 2 Receiver Output 3 2 AO DI DI Demodulator Capacitor AGC On Control Power Down/Frequency Selection Input 1 4 3 AI AI AI AI G Receiver Input 3 (for Antenna Capacitor 3) Positive Receiver Input Negative Receiver Input Receiver Input 2 (for Antenna Capacitor 2) Power Supply Ground 1 5 5 A = Analog, D = Digital, P = Power, G = Ground, I = Input, O = Output, NC = Not Connected Notes: 1) Pin 6 between QO3 and QI must be connected to VSS to eliminate DIL package leadframe parasitic capacitances disturbing the crystal filter performance. All other NC (Not Connected) pins are also recommended to be connected to VSS to minimize noise coupling. 2) OUT = VSS when carrier amplitude at maximum; OUT = VDD when carrier amplitude is reduced (modulated) - the output is a current source/sink with |IOUT| > 5 µA - at power down the output is pulled to VSS (pull down switch) 3) PDN1 = VDD and PDN2 = VDD means receiver off - Fast start-up is triggered when the receiver is after power down controlled to power up 4) AON = VSS means AGC off (hold current gain level); AON = VDD means AGC on (working) - Internal pull-up with current < 1 µA which is switched off at power down 5) Receiver inputs RFIP and RFIM have both 600 kΩ biasing MOSFET-transistors towards ground 8 (9) DA9179.002 19 May, 2005 ORDERING INFORMATION Product Code Product Description Capacitance Option MAS9179A1TC00 Tri Band AM-Receiver IC with Differential Input Tri Band AM-Receiver IC with Differential Input Tri Band AM-Receiver IC with Differential Input Tri Band AM-Receiver IC with Differential Input EWS-tested wafer, Thickness 400 µm. EWS-tested wafer, Thickness 400 µm. EWS-tested wafer, Thickness 400 µm. EWS-tested wafer, Thickness 400 µm. CC = 0.75 pF MAS9179A2TC00 MAS9179A3TC00 MAS9179A4TC00 CC = 0.875 pF CC = 1.25 pF CC = 1.5 pF Contact Micro Analog Systems Oy for other wafer thickness options. LOCAL DISTRIBUTOR MICRO ANALOG SYSTEMS OY CONTACTS Micro Analog Systems Oy Kamreerintie 2, P.O. Box 51 FIN-02771 Espoo, FINLAND Tel. +358 9 80 521 Fax +358 9 805 3213 http://www.mas-oy.com NOTICE Micro Analog Systems Oy reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance and to supply the best possible products. Micro Analog Systems Oy assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Micro Analog Systems Oy makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification. 9 (9)