MBR3045ST, MBRB3045CT-1 SWITCHMODE™ Power Rectifier Features and Benefits • Dual Diode Construction — Terminals 1 and 3 May Be Connected • • • • for Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop 175°C Operating Junction Temperature Pb−Free Packages are Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics 3 • Case: Epoxy, Molded • Weight (Approximately): 1.9 Grams (TO−220AB) • • • 2, 4 1 1.5 Grams (TO−262) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Epoxy Meets UL 94 V−0 @ 0.125 in MARKING DIAGRAMS 4 TO−220AB CASE 221A STYLE 6 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Current (TC = 130°C) IF(AV) 30 15 A Peak Repetitive Forward Current, per Diode (Square Wave, VR = 45 V, 20 kHz) IFRM 30 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Current, per Diode (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C TJ(pk) 175 °C Per Device Per Diode Peak Surge Junction Temperature (Forward Current Applied) Voltage Rate of Change (Rated VR) dv/dt 1 2 AYWW B3045G AKA 3 4 10,000 V/ms I2PAK (TO−262) CASE 418D PLASTIC 12 3 A Y WW AKA G AYWW B3045CTG AKA = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 7 1 Publication Order Number: MBR3045ST/D MBR3045ST, MBRB3045CT−1 THERMAL CHARACTERISTICS (Per Diode) Characteristic Thermal Resistance, Junction to Case Symbol Value Unit RθJC 1.5 °C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) (iF = 15 Amp, TC = 25°C) (iF = 15 Amp, TC = 125°C) (iF = 30 Amp, TC = 25°C) (iF = 30 Amp, TC = 125°C) vF 0.62 0.57 0.76 0.72 Volts Instantaneous Reverse Current (Note 2) (VR = 45 Volts, TC = 25°C) (VR = 45 Volts, TC = 125°C) IR 0.2 40 mA 2 Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0% 200 100 150°C 100 TJ = 125°C 10 1.0 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 TJ = 150°C IR , REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 1.2 1.4 1.6 1.8 125°C 100°C 75°C 25°C 0 10 20 30 40 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 50 28 dc 24 SQUARE WAVE 20 16 12 RATED VOLTAGE APPLIED RqJC = 1.5°C/W 8.0 4.0 0 110 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 32 120 130 140 32 RATED VR APPLIED 28 dc RqJA = 16°C/W (With TO-220 Heat Sink) RqJA = 60°C/W (No Heat Sink) 24 20 SQUARE WAVE 16 12 dc 8.0 4.0 SQUARE WAVE 0 150 0 40 20 60 80 100 120 140 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating, Case Figure 4. Current Derating, Ambient 160 10000 32 SQUARE WAVE I (RESISTIVELOAD) PK + p I AV 28 TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MBR3045ST, MBRB3045CT−1 24 I (CAPACITATIVELOAD) PK + 5.0 I 20 dc AV 16 10 12 20 1000 100 8.0 TJ = 125°C 4.0 0 10 0 4.0 8.0 12 16 20 24 28 32 36 40 0 10 20 30 IF, AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (V) Figure 5. Forward Power Dissipation Figure 6. Capacitance ORDERING INFORMATION Device MBR3045ST MBR3045STG MBRB3045CT−1 MBRB3045CT−1G Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−262 50 Units/Rail TO−262 (Pb−Free) 50 Units/Rail http://onsemi.com 3 40 50 MBR3045ST, MBRB3045CT−1 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 4 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR3045ST, MBRB3045CT−1 PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 J G D 3 PL 0.13 (0.005) M T B H M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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