ONSEMI MC74HC4046AFEL

MC74HC4046A
Phase−Locked Loop
High−Performance Silicon−Gate CMOS
The MC74HC4046A is similar in function to the MC14046 Metal
gate CMOS device. The device inputs are compatible with standard
CMOS outputs; with pullup resistors, they are compatible with
LSTTL outputs.
The HC4046A phase−locked loop contains three phase
comparators, a voltage−controlled oscillator (VCO) and unity gain
op−amp DEM OUT. The comparators have two common signal inputs,
COMP IN, and SIG IN. Input SIG IN and COMP IN can be used directly
coupled to large voltage signals, or indirectly coupled (with a series
capacitor to small voltage signals). The self−bias circuit adjusts small
voltage signals in the linear region of the amplifier. Phase comparator
1 (an exclusive OR gate) provides a digital error signal PC1 OUT and
maintains 90 degrees phase shift at the center frequency between
SIG IN and COMP IN signals (both at 50% duty cycle). Phase
comparator 2 (with leading−edge sensing logic) provides digital error
signals PC2 OUT and PCP OUT and maintains a 0 degree phase shift
between SIG IN and COMP IN signals (duty cycle is immaterial). The
linear VCO produces an output signal VCO OUT whose frequency is
determined by the voltage of input VCO IN signal and the capacitor
and resistors connected to pins C1A, C1B, R1 and R2. The unity gain
op−amp output DEM OUT with an external resistor is used where the
VCO IN signal is needed but no loading can be tolerated. The inhibit
input, when high, disables the VCO and all op−amps to minimize
standby power consumption.
Applications include FM and FSK modulation and demodulation,
frequency synthesis and multiplication, frequency discrimination,
tone decoding, data synchronization and conditioning,
voltage−to−frequency conversion and motor speed control.
Features
•
•
•
•
•
•
•
•
•
•
•
http://onsemi.com
MARKING
DIAGRAMS
16
PDIP−16
N SUFFIX
CASE 648
16
1
1
16
SOIC−16
D SUFFIX
CASE 751B
16
1
HC4046AG
AWLYWW
1
16
16
1
TSSOP−16
DT SUFFIX
CASE 948F
HC40
46A
ALYWG
G
1
16
16
1
Output Drive Capability: 10 LSTTL Loads
Low Power Consumption Characteristic of CMOS Devices
Operating Speeds Similar to LSTTL
Wide Operating Voltage Range: 3.0 to 6.0 V
Low Input Current: 1.0 mA Maximum (except SIGIN and COMPIN)
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Low Quiescent Current: 80 mA Maximum (VCO disabled)
High Noise Immunity Characteristic of CMOS Devices
Diode Protection on all Inputs
Chip Complexity: 279 FETs or 70 Equivalent Gates
Pb−Free Packages are Available*
MC74HC4046AN
AWLYYWWG
SOEIAJ−16
F SUFFIX
CASE 966
74HC4046A
ALYWG
1
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G
= Pb−Free Package
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 8
1
Publication Order Number:
MC74HC4046A/D
MC74HC4046A
Pin No.
Symbol
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PCPOUT
PC1OUT
COMPIN
VCOOUT
INH
C1A
C1B
GND
VCOIN
DEMOUT
R1
R2
PC2OUT
SIGIN
PC3OUT
VCC
Name and Function
Phase Comparator Pulse Output
Phase Comparator 1 Output
Comparator Input
VCO Output
Inhibit Input
Capacitor C1 Connection A
Capacitor C1 Connection B
Ground (0 V) VSS
VCO Input
Demodulator Output
Resistor R1 Connection
Resistor R2 Connection
Phase Comparator 2 Output
Signal Input
Phase Comparator 3 Output
Positive Supply Voltage
PCPout
1
16
VCC
PC1out
2
15
PC3out
COMP in
3
14
SIGin
VCOout
4
13
PC2out
INH
5
12
R2
C1A
6
11
R1
C1B
7
10
DEMout
GND
8
9
VCOin
Figure 1. Pin Assignment
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
750
500
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP and SOIC Package†
Plastic DIP†
SOIC Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
_C
260
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
3.0
6.0
V
VCC
DC Supply Voltage (Referenced to GND) NON−VCO
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Pin 5)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
http://onsemi.com
2
MC74HC4046A
[Phase Comparator Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
VCC
V
– 55 to
25_C
≤ 85°C
≤ 125°C
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
Symbol
VIH
Parameter
Minimum High−Level Input
Voltage DC Coupled
SIGIN, COMPIN
Test Conditions
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
VIL
Maximum Low−Level Input
Voltage DC Coupled
SIGIN, COMPIN
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
VOH
Minimum High−Level
Output Voltage
PCPOUT, PCnOUT
Vin = VIH or VIL
|Iout| ≤ 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
Vin = VIH or VIL
|Iout| ≤ 4.0 mA
|Iout| ≤ 5.2 mA
VOL
Maximum Low−Level
Output Voltage Qa−Qh
PCPOUT, PCnOUT
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
Vin = VIH or VIL
|Iout| ≤ 4.0 mA
|Iout| ≤ 5.2 mA
Unit
V
V
Iin
Maximum Input Leakage Current
SIGIN, COMPIN
Vin = VCC or GND
2.0
3.0
4.5
6.0
± 3.0
± 7.0
± 18.0
± 30.0
± 4.0
± 9.0
± 23.0
± 38.0
± 5.0
± 11.0
± 27.0
± 45.0
mA
IOZ
Maximum Three−State
Leakage Current
PC2OUT
Output in High−Impedance State
Vin = VIH or VIL
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
mA
ICC
Maximum Quiescent Supply Current
(per Package) (VCO disabled)
Pins 3, 5 and 14 at VCC
Pin 9 at GND; Input Leakage at
Pins 3 and 14 to be excluded
Vin = VCC or GND
|Iout| = 0 mA
6.0
4.0
40
160
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
[Phase Comparator Section]
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
VCC
V
– 55 to
25_C
≤ 85°C
≤ 125°C
2.0
4.5
6.0
175
35
30
220
44
37
265
53
45
Symbol
tPLH,
tPHL
Parameter
Maximum Propagation Delay, SIGIN/COMPIN to PC1OUT
(Figure 2)
tPLH,
tPHL
Maximum Propagation Delay, SIGIN/COMPIN to PCPOUT
(Figure 2)
2.0
4.5
6.0
340
68
58
425
85
72
510
102
87
ns
tPLH,
tPHL
Maximum Propagation Delay, SIGIN/COMPIN to PC3OUT
(Figure 2)
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
ns
tPLZ,
tPHZ
Maximum Propagation Delay, SIGIN/COMPIN Output
Disable Time to PC2OUT (Figures 3 and 4)
2.0
4.5
6.0
200
40
34
250
50
43
300
60
51
ns
tPZH,
tPZL
Maximum Propagation Delay, SIGIN/COMPIN Output
Enable Time to PC2OUT (Figures 3 and 4)
2.0
4.5
6.0
230
46
39
290
58
49
345
69
59
ns
tTLH,
tTHL
Maximum Output Transition Time
(Figure 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
http://onsemi.com
3
Unit
ns
MC74HC4046A
[VCO Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
VCC
V
– 55 to
25_C
≤ 85°C
≤ 125°C
3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2
Symbol
VIH
Parameter
Minimum High−Level
Input Voltage
INH
Test Conditions
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
VIL
Maximum Low−Level
Input Voltage
INH
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
3.0
4.5
6.0
0.90
1.35
1.8
0.9
1.35
1.8
0.9
1.35
1.8
V
VOH
Minimum High−Level
Output Voltage
VCOOUT
Vin = VIH or VIL
|Iout| ≤ 20 mA
3.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
3.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Vin = VIH or VIL
|Iout| ≤ 4.0 mA
|Iout| ≤ 5.2 mA
4.5
6.0
0.26
0.26
0.33
0.33
0.4
0.4
Vin = VCC or GND
6.0
0.1
1.0
1.0
Min
Max
Min
Max
Min
Max
INH = VIL
3.0
4.5
6.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
V
3.0
4.5
6.0
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
kW
3.0
4.5
6.0
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
4.5
6.0
40
40
40
No
Limit
Vin = VIH or VIL
|Iout| ≤ 4.0 mA
|Iout| ≤ 5.2 mA
VOL
Iin
Maximum Low−Level
Output Voltage
VCOOUT
Vout = 0.1 V or VCC − 0.1 V
|Iout| ≤ 20 mA
Maximum Input Leakage
Current INH, VCOIN
VVCO IN Operating Voltage Range at
VCOIN over the range
specified for R1; For linearity
see Fig. 15A, Parallel value of
R1 and R2 should be > 2.7 kW
R1
Resistor Range
R2
C1
Capacitor Range
Unit
V
V
mA
pF
[VCO Section]
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
Symbol
VCC
V
Parameter
– 55 to
25_C
Min
≤ 85°C
Max
Min
Max
≤ 125°C
Min
Max
Unit
%/K
Df/T
Frequency Stability with
Temperature Changes
(Figure 14A, B, C)
3.0
4.5
6.0
fo
VCO Center Frequency
(Duty Factor = 50%)
(Figure 15A, B, C, D)
3.0
4.5
6.0
DfVCO
VCO Frequency Linearity
3.0
4.5
6.0
See Figures 16A, B, C
%
∂ VCO
Duty Factor at VCOOUT
3.0
4.5
6.0
Typical 50%
%
http://onsemi.com
4
3
11
13
MHz
MC74HC4046A
[Demodulator Section]
DC ELECTRICAL CHARACTERISTICS
Guaranteed Limit
Symbol
RS
VOFF
RD
Parameter
Test Conditions
– 55 to
25_C
VCC
V
Min
Max
50
50
50
300
300
300
≤ 85°C
Min
Max
≤ 125°C
Min
Max
Unit
Resistor Range
At RS > 300 kW the
Leakage Current can
Influence VDEMOUT
3.0
4.5
6.0
Offset Voltage
VCOIN to VDEMOUT
Vi = VVCOIN = 1/2 VCC;
Values taken over RS
Range.
3.0
4.5
6.0
See Figure 13
mV
Dynamic Output
Resistance at DEMOUT
VDEMOUT = 1/2 VCC
3.0
4.5
6.0
Typical 25 W
W
kW
ORDERING INFORMATION
Package
Shipping †
MC74HC4046AN
PDIP−16
2000 Units / Box
MC74HC4046ANG
PDIP−16
(Pb−Free)
2000 Units / Box
MC74HC4046AD
SOIC−16
48 Units / Rail
MC74HC4046ADG
SOIC−16
(Pb−Free)
48 Units / Rail
MC74HC4046ADR2
SOIC−16
2500 Units / Reel
MC74HC4046ADR2G
SOIC−16
(Pb−Free)
2500 Units / Reel
MC74HC4046ADT
TSSOP−16*
96 Units / Rail
MC74HC4046ADTG
TSSOP−16*
96 Units / Rail
MC74HC4046ADTR2
TSSOP−16*
2500 Units / Reel
MC74HC4046ADTR2G
TSSOP−16*
2500 Units / Reel
MC74HC4046AF
SOEIAJ−16
50 Units / Rail
MC74HC4046AFG
SOEIAJ−16
(Pb−Free)
50 Units / Rail
MC74HC4046AFEL
SOEIAJ−16
2000 Units / Reel
MC74HC4046AFELG
SOEIAJ−16
(Pb−Free)
2000 Units / Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
http://onsemi.com
5
MC74HC4046A
SWITCHING WAVEFORMS
SIGIN
INPUT
VCC
SIGIN, COMPIN
INPUTS
VCC
50%
GND
50%
tPLH
tPHL
GND
90%
PCPOUT, PC1OUT
PC3OUT
OUTPUTS
50%
PC2OUT
10%
tTHL
VCC
COMP IN
INPUT
OUTPUT
tTLH
50%
50%
Figure 2.
TEST POINT
50%
OUTPUT
VCC
DEVICE
UNDER
TEST
50%
C L*
GND
tPLZ
tPZL
OUTPUT
HIGH
IMPEDANCE
Figure 3.
GND
PC2OUT
VOH
90%
VCC
SIGIN
INPUT
COMPIN
INPUT
GND
tPHZ
tPZH
HIGH
IMPEDANCE
50%
10%
*INCLUDES ALL PROBE AND JIG CAPACITANCE
VOL
Figure 4.
Figure 5. Test Circuit
http://onsemi.com
6
MC74HC4046A
DETAILED CIRCUIT DESCRIPTION
up to Vref of the comparators, the oscillator logic flips the
capacitor which causes the mirror to charge the opposite side
of the capacitor. The output from the internal logic is then
taken to VCO output (Pin 4).
The input to the VCO is a very high impedance CMOS
input and thus will not load down the loop filter, easing the
filters design. In order to make signals at the VCO input
accessible without degrading the loop performance, the
VCO input voltage is buffered through a unity gain Op−amp
to Demod Output. This Op−amp can drive loads of 50K
ohms or more and provides no loading effects to the VCO
input voltage (see Figure 13).
An inhibit input is provided to allow disabling of the VCO
and all Op−amps (see Figure 6). This is useful if the internal
VCO is not being used. A logic high on inhibit disables the
VCO and all Op−amps, minimizing standby power
consumption.
Voltage Controlled Oscillator/Demodulator Output
The VCO requires two or three external components to
operate. These are R1, R2, C1. Resistor R1 and Capacitor C1
are selected to determine the center frequency of the VCO
(see typical performance curves Figure 15). R2 can be used
to set the offset frequency with 0 volts at VCO input. For
example, if R2 is decreased, the offset frequency is
increased. If R2 is omitted the VCO range is from 0 Hz. The
effect of R2 is shown in Figure 25, typical performance
curves. By increasing the value of R2 the lock range of the
PLL is increased and the gain (volts/Hz) is decreased. Thus,
for a narrow lock range, large swings on the VCO input will
cause less frequency variation.
Internally, the resistors set a current in a current mirror, as
shown in Figure 6. The mirrored current drives one side of
the capacitor. Once the voltage across the capacitor charges
VREF
12
I1
+
_
CURRENT
MIRROR
I1 + I2 = I3
R2
VCOIN
9
11
4
I2
+
_
I3
R1
DEMOD OUT
VCOOUT
+
_
10
C1
(EXTERNAL)
7
6
INH
−
+
−
Vref
+
5
Figure 6. Logic Diagram for VCO
The output of the VCO is a standard high speed CMOS
output with an equivalent LS−TTL fan out of 10. The VCO
output is approximately a square wave. This output can
either directly feed the COMPIN of the phase comparators or
feed external prescalers (counters) to enable frequency
synthesis.
http://onsemi.com
7
MC74HC4046A
Phase Comparators
outputs of these comparators are essentially standard 74HC
outputs (comparator 2 is TRI−STATEABLE). In normal
operation VCC and ground voltage levels are fed to the loop
filter. This differs from some phase detectors which supply
a current to the loop filter and should be considered in the
design. (The MC14046 also provides a voltage).
All three phase comparators have two inputs, SIGIN and
COMPIN. The SIGIN and COMPIN have a special DC bias
network that enables AC coupling of input signals. If the
signals are not AC coupled, standard 74HC input levels are
required. Both input structures are shown in Figure 7. The
VCC
VCC
SIGIN
14
PC2OUT
13
VCC
COMPIN
3
PCPOUT
1
PC3OUT
15
PC1OUT
2
Figure 7. Logic Diagram for Phase Comparators
Phase Comparator 1
two input signals must be in phase. When the input
frequency is fmax, the VCO input must be VCC and the phase
detector inputs must be 180 degrees out of phase.
This comparator is a simple XOR gate similar to the
74HC86. Its operation is similar to an overdriven balanced
modulator. To maximize lock range the input frequencies
must have a 50% duty cycle. Typical input and output
waveforms are shown in Figure 8. The output of the phase
detector feeds the loop filter which averages the output
voltage. The frequency range upon which the PLL will lock
onto if initially out of lock is defined as the capture range.
The capture range for phase detector 1 is dependent on the
loop filter design. The capture range can be as large as the
lock range, which is equal to the VCO frequency range.
To see how the detector operates, refer to Figure 8. When
two square wave signals are applied to this comparator, an
output waveform (whose duty cycle is dependent on the
phase difference between the two signals) results. As the
phase difference increases, the output duty cycle increases
and the voltage after the loop filter increases. In order to
achieve lock when the PLL input frequency increases, the
VCO input voltage must increase and the phase difference
between COMPIN and SIGIN will increase. At an input
frequency equal to fmin, the VCO input is at 0 V. This
requires the phase detector output to be grounded; hence, the
SIGIN
COMP IN
PC1OUT
VCOIN
VCC
GND
Figure 8. Typical Waveforms for PLL Using
Phase Comparator 1
The XOR is more susceptible to locking onto harmonics
of the SIGIN than the digital phase detector 2. For instance,
a signal 2 times the VCO frequency results in the same
output duty cycle as a signal equal to the VCO frequency.
The difference is that the output frequency of the 2f example
is twice that of the other example. The loop filter and VCO
range should be designed to prevent locking on to
harmonics.
http://onsemi.com
8
MC74HC4046A
Phase Comparator 2
and will cause the output to go high until the VCO leading
edge is seen, potentially for an entire SIGIN period. This
would cause the VCO to speed up during that time. When
using PC1, the output of that phase detector would be
disturbed for only the short duration of the noise spike and
would cause less upset.
This detector is a digital memory network. It consists of
four flip−flops and some gating logic, a three state output
and a phase pulse output as shown in Figure 6. This
comparator acts only on the positive edges of the input
signals and is independent of duty cycle.
Phase comparator 2 operates in such a way as to force the
PLL into lock with 0 phase difference between the VCO
output and the signal input positive waveform edges. Figure
8 shows some typical loop waveforms. First assume that
SIGIN is leading the COMPIN. This means that the VCO’s
frequency must be increased to bring its leading edge into
proper phase alignment. Thus the phase detector 2 output is
set high. This will cause the loop filter to charge up the VCO
input, increasing the VCO frequency. Once the leading edge
of the COMPIN is detected, the output goes TRI−STATE
holding the VCO input at the loop filter voltage. If the VCO
still lags the SIGIN then the phase detector will again charge
up the VCO input for the time between the leading edges of
both waveforms.
If the VCO leads the SIGIN then when the leading edge of
the VCO is seen; the output of the phase comparator goes
low. This discharges the loop filter until the leading edge of
the SIGIN is detected at which time the output disables itself
again. This has the effect of slowing down the VCO to again
make the rising edges of both waveforms coincidental.
When the PLL is out of lock, the VCO will be running
either slower or faster than the SIGIN. If it is running slower
the phase detector will see more SIGIN rising edges and so
the output of the phase comparator will be high a majority
of the time, raising the VCO’s frequency. Conversely, if the
VCO is running faster than the SIGIN, the output of the
detector will be low most of the time and the VCO’s output
frequency will be decreased.
As one can see, when the PLL is locked, the output of
phase comparator 2 will be disabled except for minor
corrections at the leading edge of the waveforms. When PC2
is TRI−STATED, the PCP output is high. This output can be
used to determine when the PLL is in the locked condition.
This detector has several interesting characteristics. Over
the entire VCO frequency range there is no phase difference
between the COMPIN and the SIGIN. The lock range of the
PLL is the same as the capture range. Minimal power was
consumed in the loop filter since in lock the detector output
is a high impedance. When no SIGIN is present, the detector
will see only VCO leading edges, so the comparator output
will stay low, forcing the VCO to fmin.
Phase comparator 2 is more susceptible to noise, causing
the PLL to unlock. If a noise pulse is seen on the SIGIN, the
comparator treats it as another positive edge of the SIGIN
Phase Comparator 3
This is a positive edge−triggered sequential phase
detector using an RS flip−flop as shown in Figure 7. When
the PLL is using this comparator, the loop is controlled by
positive signal transitions and the duty factors of SIG IN and
COMP IN are not important. It has some similar
characteristics to the edge sensitive comparator. To see how
this detector works, assume input pulses are applied to the
SIG IN and COMP IN ’s as shown in Figure 10. When the
SIGIN leads the COMPIN, the flop is set. This will charge the
loop filter and cause the VCO to speed up, bringing the
comparator into phase with the SIG IN. The phase angle
between SIGIN and COMP IN varies from 0° to 360° and is
180° at fo. The voltage swing for PC3 is greater than for PC2
but consequently has more ripple in the signal to the VCO.
When no SIG IN is present the VCO will be forced to fmax as
opposed to fmin when PC2 is used.
The operating characteristics of all three phase
comparators should be compared to the requirements of the
system design and the appropriate one should be used.
SIGIN
COMP IN
PC2OUT
VCC
HIGH IMPEDANCE OFF−STATE
GND
VCOIN
PCPOUT
Figure 9. Typical Waveforms for PLL Using
Phase Comparator 2
SIGIN
COMP IN
PC3OUT
VCOIN
Figure 10. Typical Waveform for PLL Using
Phase Comparator 3
http://onsemi.com
9
VCC
GND
MC74HC4046A
800
VCC=6.0 V
VCC=3.0 V
4.0
VCC=4.5 V
400
I I ( μ A)
R I = (k Ω )
VCC=3.0 V
VCC=4.5 V
0
VCC=6.0 V
0
1/2 VCC−1.0 V
1/2 VCC+1.0 V
1/2 VCC
−4.0
1/2VCC − 500 mV
VI (V)
1/2 VCC
VI (V)
1/2 VCC + 500 mV
Figure 12. Input Current at SIGIN, COMPIN with
DVI = 500 mV at Self−Bias Point
Figure 11. Input Resistance at SIGIN, COMPIN with
DVI = 1.0 V at Self−Bias Point
DEMOD OUT
15
VDEM
OUT
VCC=6.0 V RS=300k
VCC=6.0 V RS=50k
VCC=4.5 V RS=300k
VCC=4.5 V RS=50k
FREQUENCY STABILITY (%)
6.0
6.0
R1=100kW
5.0
0
−5.0
−15
−100
0
50
100
AMBIENT TEMPERATURE (°C)
−50
VCC = 3.0 V
C1=100pF; R2=∞; VVCOIN=1/3VCC
0
50
100
AMBIENT TEMPERATURE (°C)
10
VCC=4.5 V
C1=100pF; R2=∞; VVCOIN=1/2V CC
−50
R1=300kW
150
Figure 13A. Frequency Stability versus Ambient
Temperature: VCC = 3.0 V
FREQUENCY STABILITY (%)
FREQUENCY STABILITY (%)
R1=300kW
−10
R1=100kW
0
−15
−100
R1=3.0kW
10
R1=300kW
R1=3.0kW
Figure 13. Offset Voltage at Demodulator Output as
a Function of VCOIN and RS
15
5.0
−10
3.0
VCOIN (V)
0
R1=100kW
−5.0
VCC=3.0 V RS=300k
VCC=3.0 V RS=50k
0
R1=3.0kW
10
6.0
4.0
2.0
0
−2.0
−4.0
−6.0
−8.0
−10
−100
150
R1=3.0kW
R1=300kW
R1=100kW
8.0
VCC=6.0 V
C1=100pF; R2=∞; VVCOIN=1/2VCC
−50
0
50
100
150
AMBIENT TEMPERATURE (°C)
Figure 13B. Frequency Stability versus Ambient
Temperature: VCC = 4.5 V
Figure 13C. Frequency Stability versus Ambient
Temperature: VCC = 6.0 V
http://onsemi.com
10
MC74HC4046A
23
70
21
VCC = 6.0 V
60
19
VCC = 3.0 V
f VCO (KHz)
f VCO(MHz)
50
VCC = 4.5 V
17
15
13
R1 = 3.0 kW
C1 = 39 pF
9
7.0
0
0.5
1.0
40
30
20
VCC = 3.0 V
11
1.5
2.0
2.5
3.0
3.5
R1 = 3.0 kW
C1 = 0.1 mF
10
0
4.0
0
0.5
1.0
1.5
2.0
VVCOIN (V)
2.5
3.0
3.5
4.0
VVCOIN (V)
Figure 14A. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN)
Figure 14B. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN)
1.0
2.0
VCC = 4.5 V
VCC = 6.0 V
0.9
VCC = 4.5 V
0.8
VCC = 6.0 V
0.7
f VCO (KHz)
VCC = 3.0 V
f VCO(MHz)
VCC = 6.0 V
VCC = 4.5 V
1.0
VCC = 3.0 V
0.6
0.5
0.4
0.3
0.2
R1 = 300 kW
C1 = 39 pF
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R1 = 300 kW
C1 = 0.1 mF
0.1
4.5
0
0
0.5
1.0
1.5
2.0
VVCOIN (V)
Figure 14C. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN)
2.0
Δ f VCO (%)
3.0
3.5
4.0
4.5
Figure 14D. VCO Frequency (fVCO) as a Function
of the VCO Input Voltage (VVCOIN)
VCC=
4.5 V
1.0
C1 = 1.0 mF
6.0 V
f2
3.0 V
f0
f0′
4.5 V
f1
0
6.0 V
−1.0
−2.0
2.5
VVCOIN (V)
3.0 V
10
0
R2 = ∞; DV = 0.5 V
C1 = 39 pF
101
R1 (kW)
102
MIN
103
1/2 VCC
MAX
DV = 0.5 V OVER THE VCC RANGE:
FOR VCO LINEARITY
f0′ = (f1 + f2) / 2
LINEARITY = (f0′ − f0) / f0′) x 100%
Figure 15A. Frequency Linearity versus
R1, C1 and VCC
Figure 15B. Definition of VCO Frequency Linearity
http://onsemi.com
11
MC74HC4046A
106
106
CL=50pF; R2=∞; VVCOIN=1/2 VCC FOR VCC=4.5V AND 6.0V;
CL=50pF; R1=∞; VVCOIN=0V; Tamb=25°C
105
105
VCC=6.0V, C1=40pF
VCC=6.0V, C1=1.0 mF
104
PR2 ( μW)
PR1 ( μW)
VVCOIN=1/3 VCC FOR VCC=3.0V; Tamb=25°C
VCC=6.0V, C1=40pF
VCC=6.0V, C1=1.0 mF
104
VCC=4.5V, C1=40pF
VCC=4.5V, C1=1.0 mF
VCC=4.5V, C1=40pF
VCC=4.5V, C1=1.0 mF
VCC=3.0V, C1=40pF
103
VCC=3.0V, C1=1.0 mF
100
101
R1 (kW)
102
103
103
VCC=3.0V, C1=1.0 mF
100
101
Figure 16. Power Dissipation versus R1
102
103
R1=R2=∞; Tamb=25°C
VCC=
6.0 V
4.5 V
3.0 V
6.0 V
4.5 V
3.0 V
6.0 V
4.5 V
3.0 V
107
106
VCO
(Hz)
102
VCC=6.0 V
105
INH=GND; Tamb=25°C; R2=∞; VVCOIN=1/3 VCC
R1=3.0kW
f
PDEM ( μ W)
R2 (kW)
Figure 17. Power Dissipation versus R2
108
103
VCC=3.0V, C1=40pF
VCC=4.5 V
101
104
VCC=3.0 V
R1=100kW
103
R1=300kW
100
101
102
RS (kW)
102
103
101
f
off (Hz)
106
105
VVCOIN=1/3 VCC FOR VCC=3.0V; INH=GND; Tamb=25°C
6.0 V
4.5 V
3.0 V
104
105
106
VCC=4.5V; R2=∞
107
R2=3.0kW
106
105
104
103
R2=100kW
102
101
104
108
R1=∞; VVCOIN=1/2 VCC FOR VCC=4.5V AND 6.0V;
2fL (Hz)
107
VCC=
6.0 V
4.5 V
3.0 V
6.0 V
4.5 V
3.0 V
103
C1 (pF)
Figure 19. VCO Center Frequency versus C1
Figure 18. DC Power Dissipation of
Demodulator versus RS
108
102
103
R2=300kW
101
102
103
104
105
102
106
10−7
C1 (pF)
10−6
10−5
10−4
10−3
10−2
10−1
R1C1
Figure 20. Frequency Offset versus C1
Figure 21. Typical Frequency Lock Range (2fL)
versus R1C1
http://onsemi.com
12
MC74HC4046A
20
10
FREQ. (MHz)
R1=20kW
R1=30kW
10
R1=40kW
5.0
101
0
R1=300kW
102
103
104
−2.0
105
100
101
102
103
R2 (kW)
104
R2 (kW)
Figure 22. R2 versus fmax
Figure 23. R2 versus fmin
20
C1=39pF
2f L (MHz)
1.0
R1=3kW
R1=10kW
R1=20kW
R1=30kW
R1=40kW
R1=50kW
R1=100kW
R1=300kW
6.0
2.0
R1=100kW
0
8.0
4.0
R1=50kW
C1=39pF
C1=39pF
12
R1=10kW
15
FREQ. (MHz)
14
R1=3.0kW
R1=10kW
R1=3.0kW
R1=20kW
10
R1=30kW
R1=40kW
R1=50kW
R1=100kW
R1=300kW
0
1.0
101
102
R2 (kW)
103
104
105
Figure 24. R2 versus Frequency Lock Range (2fL)
http://onsemi.com
13
105
106
MC74HC4046A
APPLICATION INFORMATION
The following information is a guide for approximate values of R1, R2, and C1. Figures 20, 21, and 22 should be used as
references as indicated below, also the values of R1, R2, and C1 should not violate the Maximum values indicated in the DC
ELECTRICAL CHARACTERISTICS tables.
Phase Comparator 1
R2 = ∞
R2 0 R
Phase Comparator 2
R2 = ∞
R2 0 R
Phase Comparator 3
R2 = ∞
R2 0 R
• Given f0
• Given f0 and fL
• Given fmax and f0
• Given f0 and fL
• Given fmax and f0
• Given f0 and fL
• Use f0 with
Figure 19 to
determine R1 and
C1.
• Calculate fmin
fmin = f0−fL
• Determine the
value of R1 and
C1 using Figure
20 and use Figure
22 to obtain 2fL
and then use this
to calculate fmin.
• Calculate fmin
fmin = f0−fL
• Determine the
value of R1 and
C1 using Figure
20 and Figure 22
to obtain 2fL and
then use this to
calculate fmin.
• Calculate fmin:
fmin = f0−fL
(see Figure 24 for
characteristics of
the VCO operation)
• Determine values
of C1 and R2 from
Figure 21.
• Determine R1−C1
from Figure 22.
• Determine values
of C1 and R2 from
Figure 21.
• Determine R1−C1
from Figure 22.
• Determine values
of C1 and R2 from
Figure 21.
• Determine R1−C1
from Figure 22.
• Calculate value of
R1 from the value
of C1 and the
product of R1C1
from Figure 22.
• Calculate value of
R1 from the value
of C1 and the
product of R1C1
from Figure 22.
• Calculate value of
R1 from the value
of C1 and the
product of R1C1
from Figure 22.
(see Figure 25 for
characteristics of
the VCO operation)
(see Figure 25 for
characteristics of
the VCO operation)
(see Figure 25 for
characteristics of
the VCO operation)
http://onsemi.com
14
MC74HC4046A
PACKAGE DIMENSIONS
PDIP−16
N SUFFIX
CASE 648−08
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
−A−
16
9
1
8
B
F
C
L
DIM
A
B
C
D
F
G
H
J
K
L
M
S
S
−T−
SEATING
PLANE
K
H
D
M
J
G
16 PL
0.25 (0.010)
T A
M
M
INCHES
MIN
MAX
0.740 0.770
0.250 0.270
0.145 0.175
0.015 0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
0_
10 _
0.020 0.040
MILLIMETERS
MIN
MAX
18.80 19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
−A−
16
9
−B−
1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
http://onsemi.com
15
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC74HC4046A
PACKAGE DIMENSIONS
TSSOP−16
DT SUFFIX
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
ÇÇÇ
ÉÉÉ
ÇÇÇ
ÉÉÉ
ÇÇÇ
K
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
http://onsemi.com
16
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
MC74HC4046A
PACKAGE DIMENSIONS
SOEIAJ−16
F SUFFIX
CASE 966−01
ISSUE O
16
LE
9
Q1
M_
E HE
1
8
L
DETAIL P
Z
D
e
VIEW P
A
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
A1
b
0.13 (0.005)
c
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE
MOLD FLASH OR PROTRUSIONS AND ARE
MEASURED AT THE PARTING LINE. MOLD FLASH
OR PROTRUSIONS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
0.10 (0.004)
http://onsemi.com
17
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
−−−
0.78
INCHES
MIN
MAX
−−− 0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
−−− 0.031
MC74HC4046A
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
http://onsemi.com
18
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MC74HC4046A/D