MJD112 (NPN) MJD117 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS Features • Lead Formed for Surface Mount Applications in Plastic Sleeves • • • (No Suffix) Straight Lead Version in Plastic Sleeves (“−1” Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Pb−Free Packages are Available MARKING DIAGRAMS 4 MAXIMUM RATINGS Rating YWW J11xG 1 2 3 Symbol Max Unit VCEO 100 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 5 Vdc IC 2 4 Adc Base Current IB 50 mAdc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note1) @ TA = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 Symbol Max Unit RqJC 6.25 °C/W ORDERING INFORMATION °C/W See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Collector−Emitter Voltage Collector Current − Continuous − Peak Characteristic Thermal Resistance, Junction−to−Ambient (Note 1) 1.75 0.014 RqJA °C 71.4 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 7 4 YWW J11xG 1 2 3 DPAK−3 CASE 369D W W/°C THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case DPAK CASE 369C 1 Y WW x G = Year = Work Week = 2 or 7 = Pb−Free Package Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJD112/D MJD112 (NPN) MJD117 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit 100 − − 20 − 20 − 2 − 10 − 2 500 1000 200 − 12,000 − − − 2 3 − 4 − 2.8 25 − − − 200 100 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO Collector Cutoff Current (VCB = 100 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Collector−Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter−Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) (IC = 2 Adc, VCE = 3 Vdc) (IC = 4 Adc, VCE = 3 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 2 Adc, IB = 8 mAdc) (IC = 4 Adc, IB = 40 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 40 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MHz Cob pF MJD117 MJD112 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA ts RC SCOPE TUT V2 APPROX +8 V 0 V1 APPROX −12 V 4 VCC −30 V 51 25 ms tr, tf ≤ 10 ns DUTY CYCLE = 1% D1 ≈8k t, TIME (s) μ RB ≈ 60 +4V VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C 2 tf 1 0.8 tr 0.6 0.4 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure 1. Switching Times Test Circuit PNP NPN 0.1 td @ VBE(off) = 0 V 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times http://onsemi.com 2 2 4 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD112 (NPN) MJD117 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE P(pk) RqJC(t) = r(t) RqJC RqJC = 6.25°C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 1000 Figure 3. Thermal Response TA TC 2.5 25 10 7 5 3 2 100ms PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) ACTIVE−REGION SAFE−OPERATING AREA 500ms 1 0.7 0.5 0.3 0.2 5ms 1ms dc BONDING WIRE LIMITED THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.1 TJ = 150°C CURVES APPLY BELOW RATED VCEO 2 3 5 7 10 20 30 50 70 100 200 2 20 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 4. Maximum Rated Forward Biased Safe Operating Area TC 125 15 Figure 5. Power Derating 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. C, CAPACITANCE (pF) TC = 25°C 100 70 50 Cob 30 Cib 20 PNP NPN 10 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 3 10 20 40 MJD112 (NPN) MJD117 (PNP) TYPICAL ELECTRICAL CHARACTERISTICS NPN MJD112 PNP MJD117 6k 6k VCE = 3 V 4k 4k 3k 3k 2k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125°C 25°C 1k 800 −55 °C 600 400 300 0.04 0.06 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 25°C 2k 1k 800 −55 °C 600 400 300 0.04 0.06 4 VCE = 3 V TC = 125°C 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 3.4 TJ = 125°C 3 IC = 0.5 A 2.6 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 3.4 TJ = 125°C 3 2.6 IC = 0.5 A 1A 2A 4A 2.2 1.8 1.4 1 0.6 0.1 0.2 0.5 IB, BASE CURRENT (mA) 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) Figure 8. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V 1 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1 2 0.2 0.04 0.06 4 IC, COLLECTOR CURRENT (AMP) 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) Figure 9. “On Voltages http://onsemi.com 4 2 4 MJD112 (NPN) MJD117 (PNP) PNP MJD117 +0.8 0 θV, TEMPERATURE COEFFICIENTS (mV/°C) θV, TEMPERATURE COEFFICIENTS (mV/°C) NPN MJD112 *APPLIED FOR IC/IB < hFE/3 −0.8 25°C TO 150°C −1.6 −2.4 *qVC FOR VCE(sat) −55 °C TO 25°C −3.2 −4 25°C TO 150°C qVC FOR VBE −4.8 0.04 0.06 0.1 −55 °C TO 25°C 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 +0.8 0 *APPLIES FOR IC/IB < hFE/3 25°C TO 150°C −0.8 −1.6 *qVC FOR VCE(sat) 25°C TO 150°C −3.2 −4 −55 °C TO 25°C qVB FOR VBE −4.8 0.04 0.06 4 −55 °C TO 25°C −2.4 0.1 0.2 0.4 0.6 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 10. Temperature Coefficients 105 104 103 REVERSE FORWARD IC, COLLECTOR CURRENT (A) μ IC, COLLECTOR CURRENT (A) μ 105 VCE = 30 V 102 TJ = 150°C 101 100 10−1 −0.6 −0.4 100°C 25°C −0.2 0 +0.2 +0.4 +0.6 +0.8 +1 VBE, BASE−EMITTER VOLTAGE (VOLTS) 104 103 REVERSE VCE = 30 V 102 101 TJ = 150°C 100°C 100 10−1 +0.6 +0.4 +1.2 +1.4 FORWARD 25°C +0.2 0 −0.2 −0.4 −0.6 −0.8 −1 VBE, BASE−EMITTER VOLTAGE (VOLTS) Figure 11. Collector Cut−Off Region COLLECTOR PNP COLLECTOR NPN BASE BASE ≈8k ≈ 120 ≈8k EMITTER ≈ 120 EMITTER Figure 12. Darlington Schematic http://onsemi.com 5 −1.2 −1.4 MJD112 (NPN) MJD117 (PNP) ORDERING INFORMATION Device MJD112 MJD112G Package Type MJD112−1G DPAK−3 (Pb−Free) MJD112T4 MJD112T4G MJD117 MJD117G 369D 1800 Tape & Reel DPAK (Pb−Free) DPAK 369C DPAK (Pb−Free) 2500 Tape & Reel DPAK DPAK (Pb−Free) DPAK−3 MJD117−1G DPAK−3 (Pb−Free) MJD117T4G 75 Units / Rail DPAK MJD117−001 MJD117T4 369C DPAK (Pb−Free) DPAK−3 MJD112RLG Shipping † DPAK MJD112−001 MJD112RL Package 75 Units / Rail 369D DPAK 369C DPAK (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MJD112 (NPN) MJD117 (PNP) PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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