SPICE MODEL: MMBT4403T MMBT4403T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · SOT-523 Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT4401T) A Ultra-Small Surface Mount Package C Lead Free/RoHS Compliant (Note 2) B C TOP VIEW Mechanical Data · · · · · · · · · B E G Case: SOT-523 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K N M Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 J L D Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram C Marking (See Page 2): 2T Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approx.) B Maximum Ratings E @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous (Note 1) IC -600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30273 Rev. 7 - 2 1 of 4 www.diodes.com MMBT4403T ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -40 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -40 ¾ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -100mA, IC = 0 ICEX ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V IBL ¾ -100 nA VCE = -35V, VEB(OFF) = -0.4V hFE 30 60 100 100 20 ¾ ¾ ¾ 300 ¾ ¾ Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.40 -0.75 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) -0.75 ¾ -0.95 -1.30 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Output Capacitance Ccb ¾ 8.5 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ¾ 30 pF VEB = -0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.5 15 kW Voltage Feedback Ratio hre 0.1 8.0 x 10-4 Small Signal Current Gain hfe 60 500 ¾ Output Admittance hoe 1.0 100 mS fT 200 ¾ MHz Delay Time td ¾ 15 ns Rise Time tr ¾ 20 ns Storage Time ts ¾ 225 ns Fall Time tf ¾ 30 ns OFF CHARACTERISTICS (Note 3) Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz SWITCHING CHARACTERISTICS VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Ordering Information (Note 4) Notes: Device Packaging Shipping MMBT4403T-7-F SOT-523 3000/Tape & Reel 3. Short duration pulse test used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2T = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2TYM Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 Code N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30273 Rev. 7 - 2 2 of 4 www.diodes.com MMBT4403T 20 150 Cibo CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) 30 100 50 10 5.0 Cobo 0 0 100 200 1.0 -0.1 VCE, COLLECTOR-EMITTER VOLTAGE (V) TA, AMBIENT TEMPERATURE (ºC) Fig. 1 Power Derating Curve, Total Package -1.0 -10 -30 REVERSE VOLTS (V) Fig. 2 Typical Capacitance 1.6 1.4 1.2 IC = 10mA IC = 1mA IC = 100mA IC = 300mA IC = 30mA 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 TA = 50°C VBE(ON), BASE EMITTER VOLTAGE (V) 1.0 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) NEW PRODUCT 200 0 VCE = 5V 0.9 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current DS30273 Rev. 7 - 2 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Base-Emitter Voltage vs. Collector Current 3 of 4 www.diodes.com MMBT4403T 1000 hFE, DC CURRENT GAIN NEW PRODUCT fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 10 VCE = 5V 100 1 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 6 DC Current Gain vs. Collector Current 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of Diodes Incorporated. DS30273 Rev. 7 - 2 4 of 4 www.diodes.com MMBT4403T