SPICE MODELS: MMBTA55 MMBTA56 MMBTA55 / MMBTA56 Lead-free PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · Epitaxial Planar Die Construction Complementary NPN Types Available (MMBTA05 / MMBTA06) SOT-23 A Ideal for Medium Power Amplification and Switching Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 Lead Free/RoHS Compliant (Note 3) B Qualified to AEC-Q101 Standards for High Reliability B Mechanical Data · · Dim C TOP VIEW C E D E G Case: SOT-23 H Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K M G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 · · · · Moisture Sensitivity: Level 1 per J-STD-020C Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). M 0.085 0.180 · · · · MMBTA55 Marking (See Page 2): K2H a 0° 8° J L Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 C B MMBTA56 Marking (See Page 2): K2G E All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMBTA55 MMBTA56 Unit Collector-Base Voltage Characteristic VCBO -60 -80 V Collector-Emitter Voltage VCEO -60 -80 V Emitter-Base Voltage VEBO -4.0 V IC -500 mA Pd Collector Current - Continuous (Note 1) 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA55 MMBTA56 V(BR)CBO -60 -80 ¾ V IC = -100mA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA55 MMBTA56 V(BR)CEO -60 -80 ¾ V IC = -1.0mA, IB = 0 V(BR)EBO -4.0 ¾ V Emitter-Base Breakdown Voltage Collector Cutoff Current MMBTA55 MMBTA56 MMBTA55 MMBTA56 IE = -100mA, IC = 0 VCB = -60V, IE = 0 VCB = -80V, IE = 0 VCE = -60V, IBO = 0V VCE = -80V, IBO = 0V ICBO ¾ -100 nA ICEX ¾ -100 nA hFE 100 ¾ ¾ IC = -10mA, VCE = -1.0V IC = -100mA, VCE = -1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.25 V IC = -100mA, IB = -10mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.2 V IC = -100mA, VCE = -1.0V fT 50 ¾ MHz VCE = -1.0V, IC = -100mA, f = 100MHz Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. 3. No purposefully added lead. DS30054 Rev. 9 - 2 1 of 3 www.diodes.com MMBTA55 / MMBTA56 ã Diodes Incorporated Ordering Information Notes: (Note 4) Device Packaging Shipping MMBTA55-7-F MMBTA56-7-F SOT-23 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K2x = Product Type Marking Code, ex: K2H = MMBTA55 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K2x Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.25 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 IC IB = 10 0.20 TA = 25°C 0.15 0.10 TA = 150°C TA = -50°C 0.05 50 0 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature DS30054 Rev. 9 - 2 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 2 of 3 www.diodes.com MMBTA55 / MMBTA56 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 1000 VCE = 5V hFE, DC CURRENT GAIN (NORMALIZED) TA = 150°C 100 TA = 25°C TA = -50°C 0.9 VCE = 5V 0.8 TA = -50°C 0.7 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 0.1 10 1 10 100 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Base Emitter Voltage vs. Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 5V 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Gain Bandwidth Product vs. Collector Current IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30054 Rev. 9 - 2 3 of 3 www.diodes.com MMBTA55 / MMBTA56