MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSA733 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group R hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - P hFE 200 - 400 - L hFE 350 - 700 - -V(BR)CBO 60 - - V -V(BR)CEO 50 - - V -V(BR)EBO 5 - - V -ICBO - - 0.1 µA -IEBO - - 0.1 µA -VCE(sat) - - 0.3 V -VBE(on) 0.5 - 0.8 V fT 50 180 - MHz COB - 2.8 - pF F - 6 20 dB DC Current Gain at -VCE=6V, -IC=1mA Collector Base Breakdown Voltage at -IC=100µA Collector Emitter Breakdown Voltage at -IC=10mA Emitter Base Breakdown Voltage at -IE=10µA Collector Cutoff Current at -VCB=60V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=100mA, -IB=10mA Base Emitter Voltage at -VCE=6V, -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=10mA Output Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=6V, -IC=0.3mA, f=100Hz, RS=10KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005