SEMTECH_ELEC MMBTSB815

MMBTSB815
PNP Silicon Epitaxial Planar Transistor
for general purpose AF amplifier
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
-VCBO
20
V
Collector Emitter Voltage
-VCEO
15
V
Emitter Base Voltage
-VEBO
5
V
Collector Current
-IC
700
mA
Collector Current (Pulse)
-ICP
1.5
A
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
C
C
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 50 mA
at -VCE = 2 V, -IC = 500 mA
Collector Cutoff Current
at -VCB = 15 V
Emitter Cutoff Current
at -VEB = 4 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 100 µA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 5 mA, -IB = 0.5 mA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 10 mA
Transition Frequency
at -VCE = 10 V, -IC = 50 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
200
80
-
400
-
-
-ICBO
-
-
100
nA
-IEBO
-
-
100
nA
-V(BR)CBO
20
-
-
V
-V(BR)CEO
15
-
-
V
-V(BR)EBO
5
-
-
V
-VCE(sat)
-
-
35
mV
-VCE(sat)
-
-
120
mV
fT
-
250
-
MHz
Cob
-
13
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/07/2007
MMBTSB815
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/07/2007