MMBTSB815 PNP Silicon Epitaxial Planar Transistor for general purpose AF amplifier SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 20 V Collector Emitter Voltage -VCEO 15 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 700 mA Collector Current (Pulse) -ICP 1.5 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 50 mA at -VCE = 2 V, -IC = 500 mA Collector Cutoff Current at -VCB = 15 V Emitter Cutoff Current at -VEB = 4 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 100 µA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 5 mA, -IB = 0.5 mA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 10 V, -IC = 50 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Symbol Min. Typ. Max. Unit hFE hFE 200 80 - 400 - - -ICBO - - 100 nA -IEBO - - 100 nA -V(BR)CBO 20 - - V -V(BR)CEO 15 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 35 mV -VCE(sat) - - 120 mV fT - 250 - MHz Cob - 13 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/07/2007 MMBTSB815 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 18/07/2007