MMBTSD1781 NPN Silicon Epitaxial Planar Transistor Medium Power Transistor The transistor is subdivided into two group Q and R according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V IC 0.8 A (DC) ICP 1.5 A (Pulse) Ptot 200 Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current Power Dissipation 1) 1) mW C C Single pulse Pw = 100 ms Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE 120 180 - 270 390 - V(BR)CEO 32 - - V V(BR)CBO 40 - V(BR)EBO 5 - - V ICBO - - 0.5 µA IEBO - - 0.5 µA VCE(sat) - - 0.4 V fT - 150 - MHz Cob - 15 - pF DC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group Collector Emitter Breakdown Voltage at IC = 1 mA Collector Base Breakdown Voltage at IC = 50 µA Emitter Base Breakdown Voltage at IE = 50 µA Collector Cutoff Current at VCB = 20 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Transition Frequency at VCE = 5 V, -IE = 50 mA, f = 100 MHz Output Capacitance at VCB = 10 V, IE = 0 A, f = 1 MHz Q R - SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/12/2005 V MMBTSD1781 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 16/12/2005