MMBTSC5345W NPN Silicon Epitaxial Planar Transistor for RF amplifier The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 + 150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 5 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Transition Frequency at VCE = 6 V, -IE = 1 mA Collector Output Capacitance at VCB = 6 V, f = 1 MHz R O Y Symbol Min. Typ. Max. Unit hFE hFE hFE 40 70 120 - 80 140 240 - V(BR)CBO 30 - - V V(BR)CEO 20 - - V V(BR)EBO 4 - - V ICBO - - 0.5 µA IEBO - - 0.5 µA VCE(sat) - - 0.3 V fT - 550 - MHz COB - 1.4 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006 MMBTSC5345W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/05/2006