MOTOROLA MRA051050H

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by MRA0510–50H/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband, large–signal output and driver amplifier
stages in the 500 to 1000 MHz frequency range.
• Designed for Class AB Linear Power Amplifiers
• Specified 28 Volt, 1000 MHz Characteristics:
Output Power — 50 Watts
Power Gain — 7 dB (Min), Class AB
7.0 dB, 500 – 1000 MHz
50 W
BROADBAND
UHF POWER TRANSISTOR
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Hermetic Package for Military/Space Applications
CASE 391–03, STYLE 1
(HLP–42)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector–Emitter Voltage
Rating
VCEO
30
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
125
0.715
Watts
W/°C
Operating Junction Temperature
TJ
200
°C
Tstg
– 65 to +200
°C
Symbol
Max
Unit
RθJC
1.4
°C/W
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, RF, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
V(BR)CES
60
–
–
Vdc
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
V(BR)CBO
60
–
–
Vdc
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
V(BR)EBO
4
–
–
Vdc
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω)
V(BR)CER
50
–
–
Vdc
ICBO
–
–
25
mAdc
OFF CHARACTERISTICS (1)
Collector Cutoff Current (VCB = 30 V, IE = 0)
(1) Each transistor chip measured separately.
(continued)
REV 1
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRA0510–50H
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
hFE
20
–
80
–
Cob
–
–
24
pF
Common–Emitter Amplifier Power Gain
(VCE = 28 V, Pout = 50 W, f = 1 GHz, ICQ = 2 x 120 mA)
GPE1
7
–
–
dB
Load Mismatch
(VCE = 28 V, ICQ = 2 x 120 mA, Pout = 50 W, f = 1 GHz,
Load VSWR = 5:1, All Phase Angles)
ψ
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 V, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS (2)
No Degradation in Output Power
Broadband Power Gain
(VCE = 28 V, Pout = 45 W, f = 500 mHz and 1 GHz,
ICQ = 2 x 120 mA)
GPE2
6.5
–
–
dB
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in push–pull amplifier.
TYPICAL CHARACTERISTICS
VCC = 28 V
Po = 50 W
ONE SIDE ONLY
10
Z OL*, SERIES OUTPUT IMPEDANCE (OHMS)
Z in, SERIES INPUT IMPEDANCE (OHMS)
12
JX
8.0
6.0
4.0
R
2.0
0
500
600
700
800
f, FREQUENCY (MHz)
900
1000
Figure 1. Input Impedance versus Frequency
MRA0510–50H
2
6.0
5.0
R
VCC = 28 V
Po = 50 W
ONE SIDE ONLY
4.0
3.0
2.0
1.0
JX
0
–1.0
500
600
700
800
f, FREQUENCY (MHz)
900
1000
Figure 2. Output Impedance versus Frequency
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
–A–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
1
2
S –B–
DIM
A
B
C
D
E
G
H
J
N
Q
S
U
V
V
5
3
0.25 (0.010)
M
Q 2 PL
T A M B
J
H
4
G
M
D
N
E
C
–T–
SEATING
PLANE
INCHES
MIN
MAX
0.895
0.905
0.380
0.390
0.172
0.208
0.075
0.085
0.055
0.065
0.075
0.085
0.115
0.125
0.003
0.006
0.393
0.403
0.123
0.133
0.705
0.745
0.650 BSC
0.393
0.403
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
22.73
22.99
9.65
9.91
4.37
5.28
1.91
2.16
1.40
1.65
1.91
2.16
2.92
3.18
0.08
0.15
9.98
10.24
3.13
3.38
17.91
18.92
16.51 BSC
9.98
10.24
COLLECTOR
COLLECTOR
BASE
BASE
EMITTER
CASE 391–03
ISSUE C
MOTOROLA RF DEVICE DATA
MRA0510–50H
3
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
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MRA0510–50H
4
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MRA0510–50H/D
MOTOROLA RF DEVICE
DATA