Freescale Semiconductor Technical Data Document Number: MRF19045 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi- carrier IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.5% Adjacent Channel Power — 885 kHz: - 50 dBc @ 30 kHz BW IM3 — - 37 dBc • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 1930- 1990 MHz, 45 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 NI - 400 MRF19045LR3 CASE 465F - 04, STYLE 1 NI - 400S MRF19045LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 1.65 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF19045LR3 MRF19045LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) VGS(Q) 3 3.8 5 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 4.2 — S Crss — 1.8 — pF Characteristic Off Characteristics Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 μAdc) On Characteristics (DC) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth, IM3 measured in 1.2288 MHz Integrated Bandwidth. ACPR measured in 30 kHz Integrated Bandwidth. Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Gps 13 14.5 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) η 21 23.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz; IM3 Measured in a 1.2288 MHz Integrated Bandwidth Centered at f1 - 2.5 Mhz and f2 +2.5 MHz, Referenced to the Carrier Channel Power) IM3 — - 37 - 35 dBc ACPR — - 51 - 45 dBc IRL — - 16 -9 dB P1dB — 45 — W Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 9.5 W Avg, 2-carrier N-CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured in a 30 kHz Integrated Bandwith Centered at f1 - 885 kHz and f2 +885 kHz) Input Return Loss (VDD = 26 Vdc, Pout = 9.5 W Avg, 2 - Carrier N - CDMA, IDQ = 550 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 =1987.5 MHz, f2 = 1990 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 550 mA, f = 1990 MHz) 1. Part is internally matched both on input and output. MRF19045LR3 MRF19045LSR3 2 RF Device Data Freescale Semiconductor VBIAS + R2 R3 B1 W1 Z4 Z8 R4 R5 W2 B2 B2 C2 C3 C4 R1 C6 C7 Z3 C8 Z1 Z2 C10 + C11 Z7 Z9 Z6 RF INPUT + + C9 + C1 VSUPPLY Z10 Z11 C12 RF OUTPUT C13 Z5 C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 1.336″ x 0.081″ Microstrip 0.693″ x 0.081″ Microstrip 1.033″ x 0.047″ Microstrip 0.468″ x 0.047″ Microstrip 0.271″ x 0.460″ Microstrip 0.263″ x 0.930″ Microstrip 1.165″ x 0.047″ Microstrip Z8 Z9 Z10 Z11 PCB 0.216″ x 0.047″ Microstrip 0.519″ x 0.254″ Microstrip 0.874″ x 0.081″ Microstrip 0.645″ x 0.081″ Microstrip Arlon GX0300-55-22, 30 mils, εr = 2.55 NOTE: Z3, Z4, Z7, Z8 lengths and component placement tolerances are ±0.050″. Zx lengths are microstrip lengths between components, center-line to center-line. All component and z-length tolerances are ±0.015″, except as noted. Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 5. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Designators Description B1, B2 0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 C1, C2 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 C3, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C4, C8 24 pF Chip Capacitors, ATC #100B240JP500X C5 470 pF Chip Capacitor, ATC #100B471JP200X C6, C7 11 pF Chip Capacitors, ATC #100B110JP500X C9, C10, C12 22 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T491X226K035AS4394 C13 8.2 pF Chip Capacitor, ATC #100B8R2CP500X R1 560 kΩ, 1/4 W Chip Resistor (0.08″ x 0.13″) R2, R3, R4, R5 8.2 Ω, 1/4 W Chip Resistors (0.08″ x 0.13″), Garrett Instruments #RM73B2B110JT W1, W2 Solid Copper Buss Wire, 16 AWG WS1, WS2 Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 3 C9 C10 C1 R1 B1 R2 W1 R3 C6 C12 C8 W2 R4 B2 R5 C11 C5 WS2 C3 WS1 C2 C7 C4 C13 MRF19045/S Rev - 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045LR3 MRF19045LSR3 4 RF Device Data Freescale Semiconductor 30 −35 IM3 −40 η −45 25 −50 20 ACPR 15 −55 Gps 10 −60 5 −65 0 −70 1 2 3 4 5 6 7 8 9 10 11 12 30 25 −20 η 20 −30 IM3 15 −40 Gps 10 −50 ACPR 5 −60 1900 1930 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 350 mA 450 mA 550 mA −45 700 mA −50 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) −55 1 2 3 4 5 6 7 8 9 10 11 350 mA −55 450 mA −60 700 mA 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) −65 550 mA −70 1 2 3 4 5 6 7 8 9 10 11 Figure 5. 2-Carrier N-CDMA IM3 versus Output Power Figure 6. 2-Carrier N-CDMA ACPR versus Output Power 550 mA 15.0 G ps , POWER GAIN (dB) −50 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) 700 mA 450 mA 350 mA 14.5 VDD = 26 Vdc, IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz 14.0 1.2288 MHz Source Channel Bandwidth, 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 13.5 1 VDD = 26 Vdc IDQ = 550 mA f1 = 1960 MHz, f2 = 1962.5 MHz Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) 15.5 0 2020 −45 0 12 2 3 4 5 6 7 8 9 10 11 Pout, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power 12 η, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (WATTS CW) 0 1990 Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL and Drain Efficiency versus Output Power −30 −40 1960 f, FREQUENCY (MHz) Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power −35 −10 70 12 17 P out P 1dB 60 16 P 3dB 50 15 η 40 14 30 13 Gps 20 12 VDD = 26 Vdc IDQ = 550 mA f = 1960 MHz 10 G ps , POWER GAIN (dB) 35 0 VDD = 26 Vdc, IDQ = 550 mA 2.5 MHz Carrier Spacing 1.2288 MHz Source Channel Bandwidth 9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%) IRL 11 0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Pin, INPUT POWER (WATTS CW) Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor IM3 (dBc), ACPR (dBc), IRL (dB) 35 −30 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IM3 (dBc), ACPR (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 5 −30 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz 30 −35 25 −40 20 −45 Gps 15 −50 −55 10 IMD −60 5 η 0 0.1 −65 1.0 10 100 0 40 η −5 35 VDD = 26 Vdc IDQ = 450 mA 100 kHz Tone Spacing 30 IRL 25 −15 −20 20 G ps 15 10 −25 −30 IMD 5 1900 1930 Pout, OUTPUT POWER (WATTS PEP) 1960 −35 2020 1990 f, FREQUENCY (MHz) Figure 9. CW Two-Tone Power Gain, IMD and Drain Efficiency versus Output Power Figure 10. CW Two-Tone Power Gain, Input Return Loss, IMD and Drain Efficiency versus Frequency −25 16.0 VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz −30 −40 15.5 350 mA −35 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −10 700 mA −45 −50 550 mA −55 450 mA −60 700 mA 15.0 550 mA 14.5 450 mA 14.0 13.5 −65 VDD = 26 Vdc f1 = 1960 MHz, f2 = 1960.1 MHz 350 mA −70 0.1 1.0 10 13.0 0.1 100 1.0 0 VDD = 26 Vdc IDQ = 450 mA f1 = 1960 MHz, f2 = 1960.1 MHz 1.2288 MHz Channel BW −10 −20 −40 −IM3 in 1.2288 MHz Integrated BW −30 3rd Order −60 −70 −50 −60 5th Order −80 −90 0.1 +IM3 in 1.2288 MHz Integrated BW −40 (dB) IMD, INTERMODULATION DISTORTION (dBc) −20 −50 100 Figure 12. CW Two-Tone Power Gain versus Output Power Figure 11. CW Two-Tone Intermodulation Distortion versus Output Power −30 10 Pout, OUTPUT POWER (WATTS PEP) Pout, OUTPUT POWER (WATTS PEP) −70 7th Order −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 1.0 10 100 Pout, OUTPUT POWER (WATTS PEP) Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 f, FREQUENCY (MHz) Figure 14. 2 - Carrier N - CDMA Spectrum MRF19045LR3 MRF19045LSR3 6 IMD, INTERMODULATION DISTORTION (dBc), IRL (dB) 35 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) −25 40 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS RF Device Data Freescale Semiconductor 7.5 Zo = 25 Ω f = 1990 MHz Zload f = 1930 MHz Zsource f = 1930 MHz f = 1990 MHz VDD = 26 V, IDQ = 550 mA, Pout = 9.5 W Avg. f MHz Zsource Ω Zload Ω 1930 15.52 - j16.5 4.52 - j1.86 1960 14.24 - j14.44 3.85 - j1.04 1990 11.11 - j13.01 3.44 - j0.69 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF19045LR3 MRF19045LSR3 8 RF Device Data Freescale Semiconductor NOTES MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF19045LR3 MRF19045LSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X G bbb Q M T B A M M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 3 2X K B 2 2X D bbb T A M M B M N (LID) ccc M T A B M ccc M aaa M T A M B M A M F S (INSULATOR) SEATING PLANE T M (INSULATOR) B M R (LID) C E T A M aaa M T A H B M M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E - 04 ISSUE F NI - 400 MRF19045LR3 2X D bbb M T A B M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) ccc (LID) C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M H S (INSULATOR) aaa B (FLANGE) M B T A DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F - 04 ISSUE E NI - 400S MRF19045LSR3 MRF19045LR3 MRF19045LSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF19045LR3 MRF19045LSR3 Document Number: MRF19045 Rev. 8, 5/2006 12 RF Device Data Freescale Semiconductor