Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain — 13.2 dB Drain Efficiency — 46.2% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P24190HR6 2450 MHz, 190 W, 28 V CW LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C CW 250 1.3 W W/°C Symbol Value (2,3) CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100°C, 160 W CW Case Temperature 83°C, 40 W CW RθJC Unit °C/W 0.22 0.24 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006-2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6P24190HR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14 16 dB Drain Efficiency ηD 22 23.5 — % Intermodulation Distortion IM3 — - 37.5 - 35 dBc ACPR — - 41 - 38 dBc IRL — - 13 — dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. MRF6P24190HR6 2 RF Device Data Freescale Semiconductor VSUPPLY + R1 C7 B1 C10 VBIAS + + C12 C11 C5 C9 B2 Z6 Z4 RF INPUT Z1 Z2 C17 C18 C19 C20 C21 C27 Z28 Z16 Z18 Z20 Z22 Z14 Z8 Z10 C3 Z12 C1 Z3 Z24 Z25 Z26 RF OUTPUT Z27 DUT Z5 Z7 Z9 Z11 Z13 C2 Z17 Z19 Z21 Z23 Z15 C4 R2 C14 VBIAS + + C16 C15 B3 C13 Z29 C6 B4 + C8 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14 Z15 0.340″ 0.080″ 0.895″ 1.736″ 0.151″ 0.505″ 0.570″ 0.072″ 0.078″ 0.664″ 0.680″ x 0.081″ x 0.526″ x 0.135″ x 0.074″ x 0.074″ x 0.081″ x 0.282″ x 0.500″ x 0.500″ x 0.050″ x 0.050″ Z16, Z17 Z18, Z19 Z20, Z21 Z22 Z23 Z24 Z25 Z26 Z27 Z28, Z29 PCB Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip C22 C23 C24 C25 C26 VSUPPLY C28 0.189″ x 0.782″ Microstrip 0.321″ x 0.782″ Microstrip 0.630″ x 0.081″ Microstrip 0.150″ x 0.081″ Microstrip 1.728″ x 0.085″ Microstrip 0.122″ x 0.135″ Microstrip 0.250″ x 0.300″ Microstrip 0.563″ x 0.135″ Microstrip 0.380″ x 0.081″ Microstrip 0.305″ x 0.057″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6P24190HR6 Test Circuit Schematic — 2450 MHz Table 5. MRF6P24190HR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2, B3, B4 Ferrite Beads 2508051107Y0 Fair - Rite C1, C2, C3, C4 5.1 pF, Chip Capacitors ATC100B5R1CT500XT ATC C5, C6, C7, C8 5.6 pF, Chip Capacitors ATC100B5R6CT500XT ATC C9, C13 0.01 μF, 100 V Chip Capacitors C1825C103J1RAC Kemet C10, C14, C17, C22 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C11, C15 22 μF, 25 V Tantalum Capacitors T491D226K025AT Kemet C12, C16 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C18, C19, C20, C21, C23, C24, C25, C26 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C27, C28 330 μF, 63 V Electrolytic Capacitors NACZF331M63V Nippon R1, R2 240 Ω, 1/4 W Chip Resistors CRCW12062400FKEA Vishay MRF6P24190HR6 RF Device Data Freescale Semiconductor 3 C12 C11 + C10* C9* + + R1 C20 C21 B1 B2 C27 C5 C17 C18 C19 C7 C3 C1 C2 C6 MRF6P24190H Rev. 1.0 B3 CUT OUT AREA C4 C8 B4 + C22 C23 C24 + + R2 C16 C15 C14* C13* C28 C25 C26 *Stacked Figure 2. MRF6P24190HR6 Test Circuit Component Layout — 2450 MHz MRF6P24190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 2450 MHz 45 14 40 13.5 IDQ = 1900 mA f = 2450 MHz 13 35 30 12.5 25 12 32 V VDD = 12 V 11.5 ηD 11 20 30 V 28 V 32 V 30 V 1600 mA 1500 mA 13 2200 mA 12.5 12 11.5 VDD = 28 V f = 2450 MHz 11 10 500 100 10 1900 mA 13.5 15 10.5 2100 mA Gps 10.5 10 100 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain and Drain Efficiency versus CW Output Power Figure 4. Power Gain and Drain Efficiency versus CW Output Power 14.5 50 Gps Gps, POWER GAIN (dB) 300 14 45 13.5 40 13 35 12.5 30 12 25 VDD = 28 V IDQ = 1900 mA f = 2450 MHz 11.5 ηD 11 20 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 14.5 Gps, POWER GAIN (dB) Gps 14 50 ηD, DRAIN EFFICIENCY (%) 14.5 15 10.5 10 100 10 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Drain Efficiency versus CW Output Power 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 190 W CW, and ηD = 46.2%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 6. MTTF versus Junction Temperature MRF6P24190HR6 RF Device Data Freescale Semiconductor 5 Zo = 25 Ω Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 190 W CW f MHz Zsource W Zload W 2450 12.72 - j8.48 2.75 - j4.85 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 7. Series Equivalent Source and Load Impedance MRF6P24190HR6 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X A bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A D aaa M T A M B M ccc ccc T A M M B M T A M B M R M (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D - 05 ISSUE E NI - 1230 MRF6P24190HR6 RF Device Data Freescale Semiconductor 7 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Dec. 2006 • Initial Release of Data Sheet 1 Mar. 2007 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Added maximum CW operation limitation and derating values to the Maximum Rating table to prevent a 200°C+ hot wire operating condition, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Added frequency to title of schematic, component part layout and typical characteristic curves, p. 3 - 5 • Added Fig. 6, MTTF versus Junction Temperature graph, p. 5 2 Apr. 2008 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 MRF6P24190HR6 8 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006-2008. All rights reserved. MRF6P24190HR6 Document Number: RF Device Data MRF6P24190H Rev. 2, 4/2008 Freescale Semiconductor 9