FREESCALE MRF6P27160HR6

Freescale Semiconductor
Technical Data
MRF6P27160H
Rev. 0, 1/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for N - CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 2 x
900 mA, Pout = 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.6 dB
Drain Efficiency — 22.6%
ACPR @ 885 kHz Offset — - 47.8 dBc @ 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched, Controlled Q, for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2700 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
603
3.45
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
160
W
Symbol
Value (1,2)
Unit
CW Operation
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 160 W CW
Case Temperature 71°C, 35 W CW
RθJC
°C/W
0.29
0.31
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P27160HR6
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Volta
(VDS = 10 Vdc, ID = 250 µAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 900 mAdc)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
0.3
Vdc
gfs
—
5.3
—
S
Crss
—
2.8
—
pF
Off Characteristics
On Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2 x 900 mA, Pout = 35 W Avg. N - CDMA,
f = 2630 and 2660 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@ ±885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
Gps
13
14.6
16
dB
Drain Efficiency
ηD
20
22.6
—
%
ACPR
—
- 47.8
- 45
dBc
IRL
—
- 13
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6P27160HR6
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
Z35
R1
+
+
C7
C6
C5
C4
Z37
C3
C15
C16
C17
+
+
C18
C19
VSUPPLY
Z17 Z19 Z21 Z23 Z25 Z27 Z29
Z3
RF
INPUT Z1
Z5
Z7
Z9
Z11
Z13
Z31
C13
Z15
RF
OUTPUT
Z32 Z33
C1
DUT
Z4
Z2
Z6
Z8
Z10
Z12
Z14
C2
Z16 Z18 Z20 Z22 Z24 Z26 Z28
Z30
C14
B2
VBIAS
Z34
R2
+
+
C8
C20
1.011″ x 0.139″ Microstrip
0.150″ x 0.070″ Microstrip
1.500″ x 0.086″ Microstrip
0.050″ x 0.230″ Microstrip
0.170″ x 0.080″ Microstrip
0.144″ x 0.340″ Microstrip
0.400″ x 0.210″ Microstrip
0.280″ x 0.710″ Microstrip
0.461″ x 0.490″ Microstrip
0.357″ x 0.766″ Microstrip
0.284″ x 0.415″ Microstrip
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z32
Z33
Z34, Z35
Z36, Z37
PCB
C12 C11
Z1
Z2, Z31
Z3, Z30
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z36
C10 C9
C21
C22
+
+
C23
C24
VSUPPLY
0.160″ x 0.760″ Microstrip
0.240″ x 0.150″ Microstrip
0.170″ x 0.420″ Microstrip
0.260″ x 0.080″ Microstrip
0.040″ x 0.258″ Microstrip
0.622″ x 0.139″ Microstrip
0.346″ x 0.081″ Microstrip
0.801″ x 0.050″ Microstrip
0.460″ x 0.095″ Microstrip
Arlon GX - 0300 - 5022, 0.030″, εr = 2.5
Figure 1. MRF6P27160HR6 Test Circuit Schematic
Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair - Rite
C1, C2
5.6 pF Chip Capacitors
100B5R6CP500X
ATC
C3, C8, C15, C20
3.3 pF Chip Capacitors
100B3R3CP500X
ATC
C4, C9
0.01 µF Chip Capacitors (1825)
C1825C103J1RAC
Kemet
C5, C10
2.2 µF, 50 V Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C6, C11
22 µF, 25 V Tantalum Chip Capacitors
ECS - T1ED226R
Panasonic TE Series
C7, C12
47 µF, 16 V Tantalum Chip Capacitors
T491D476K016AS
Kemet
C13, C14
4.3 pF Chip Capacitors
100B4R3CP500X
ATC
C16, C17, C21, C22
10 µF, 50 V Chip Capacitors (2220)
GRM55DR61H106KA88B
Murata
C18, C23
47 µF, 50 V Electrolytic Capacitors
MVK50VC47RM8X10TP
Nippon
C19, C24
330 µF, 63 V Electrolytic Capacitors
NACZF331M63V
Nippon
R1, R2
3.3 W, 1/4 W Chip Resistors (1210)
ERJ - 14YJ3R3U
Dale/Vishay
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
3
C17
C7 C6
R1
B1
+
C18
C15
C3
-
C16
C5* C4*
C19
C1
C13
CUT OUT AREA
C10*
C9*
C14
MRF6P27160H
Rev 5
C20
C24
C21
-
C2
C8
R2
C12 C11
*Stacked
C23
+
B2
C22
Figure 2. MRF6P27160HR6 Test Circuit Component Layout
MRF6P27160HR6
4
RF Device Data
Freescale Semiconductor
24
23
ηD
22
21
20
15.2 VDD = 28 Vdc, Pout = 35 W (Avg.),
15 IDQ = 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13
14.8
Gps
IRL
−40
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
15.6
15.4
−45
14.6
−50
ACPR
14.4
ALT1
14.2
−55
−60
−65
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−11
−12
−13
−14
−15
IRL, INPUT RETURN LOSS (dB)
16
15.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg.
ηD
14.6
IRL
14.5
14.4
ACPR
ALT1
14.3
14.2
31
30
−30
−35
−40
−45
−50
−55
14.1
−60
14
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
−10
−11
−12
−13
−14
−15
−16
IRL, INPUT RETURN LOSS (dB)
14.9
14.8
14.7
35
VDD = 28 Vdc, Pout = 70 W (Avg.),
34
IDQ = 1800 mA, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8 Through 13 33
32
ηD, DRAIN
EFFICIENCY (%)
15.1
15
Gps
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
15.2
f, FREQUENCY (MHz)
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg.
17
Gps, POWER GAIN (dB)
16
2250 mA
1800 mA
15
1350 mA
14
13
12
0.1
900 mA
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
1000
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
IDQ = 2700 mA
VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements, 2.5 MHz Tone Spacing
−30
2700 mA
IDQ = 900 mA
−40
−50
2250 mA
1800 mA
−60
1350 mA
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
5
−10
58
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA
Two−Tone Measurements, Center Frequency = 2645 MHz
Ideal
Pout, OUTPUT POWER (dBm)
3rd Order
−30
5th Order
−40
P3dB = 54.32 dBm (270.33 W)
57
−20
−50
7th Order
56
55
P1dB = 53.64 dBm (231.15 W)
54
Actual
53
52
VDD = 28 Vdc, IDQ = 1800 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2645 MHz
51
−60
0.1
50
1
10
34
100
35
36
37
38
39
40
41
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulse CW Output Power versus
Input Power
35
42
−35
VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz
Single−Carrier N−CDMA, 1.2288 MHz Channel
Bandwidth, Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
30
25
−40
−45
20
−50
Gps
−55
15
−60
10
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
ALT1
5
ACPR
ηD
−65
0
1
−70
100
10
Pout, OUTPUT POWER (WATTS) AVG. W−CDMA
Figure 9. Single - Carrier N - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
50
40
10
30
5
20
VDD = 28 Vdc
IDQ = 1800 mA
f = 2645 MHz
0
ηD
−5
0.1
1
10
100
10
15
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
Gps
15
16
ηD, DRAIN EFFICIENCY (%)
20
14
13
32 V
28 V
12
20 V
24 V
11
IDQ = 1800 mA
f = 2645 MHz
VDD = 16 V
0
400
10
0
60
120
180
240
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
300
MRF6P27160HR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
N - CDMA TEST SIGNAL
−10
100
1.2288 MHz
Channel BW
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. Peak/Avg. = 9.8 dB @ 0.01%
Probability on CCDF.
0.01
0.001
−60
−70
−80
−ACPR @ 30 kHz
Integrated BW
−90
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 12. Single - Carrier CCDF N - CDMA
+ACPR @ 30 kHz
Integrated BW
−100
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 13. Single - Carrier N - CDMA Spectrum
MTTF FACTOR (HOURS X AMPS2)
1010
109
108
107
90
100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2600 MHz
f = 2700 MHz
Zload
Zsource
f = 2700 MHz
f = 2600 MHz
VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2600
6.90 + j0.61
5.24 + j2.46
2610
6.85 + j0.63
5.69 + j2.04
2620
6.76 + j0.59
5.71 + j1.59
2630
6.50 + j0.59
5.62 + j1.48
2640
6.13 + j0.56
5.45 + j1.42
2645
5.95 + j0.69
5.38 + j1.49
2650
5.81 + j0.83
5.31 + j1.58
2660
5.61 + j1.15
5.24 + j1.81
2670
5.69 + j1.48
5.45 + j2.09
2680
5.91 + j1.67
5.84 + j2.22
2690
6.12 + j1.68
6.22 + j2.12
2700
6.17 + j1.60
6.49 + j1.92
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6P27160HR6
8
RF Device Data
Freescale Semiconductor
NOTES
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
9
NOTES
MRF6P27160HR6
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
A
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
T A
M
B
M
R
M
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D - 05
ISSUE D
NI - 1230
MRF6P27160HR6
RF Device Data
Freescale Semiconductor
11
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF6P27160HR6
Document Number: MRF6P27160H
Rev. 0, 1/2005
12
RF Device Data
Freescale Semiconductor