FREESCALE MRF7S19210HSR3

Freescale Semiconductor
Technical Data
Document Number: MRF7S19210H
Rev. 0, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S19210HR3
MRF7S19210HSR3
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 20 dB
Drain Efficiency — 29%
Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ] 190 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1930 - 1990 MHz, 63 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S19210HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S19210HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 190 W CW
Case Temperature 79°C, 63 W CW
RθJC
0.34
0.38
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 513 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1400 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGG(Q)
4
5.4
7
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 5.13 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.17
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
257
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
508
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 1932.5 MHz and
f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18
20
21.5
dB
Drain Efficiency
ηD
26
29
—
%
PAR
5.5
5.9
—
dB
ACPR
—
- 33
- 31
dBc
IRL
—
- 9.5
-6
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S19210HR3 MRF7S19210HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth
IMD Symmetry @ 160 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
MHz
—
15
—
VBWres
—
50
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.9
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ Pout = 190 W CW
Φ
—
0.95
—
°
Delay
—
2.82
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 190 W CW,
f = 1960 MHz, Six Sigma Window
ΔΦ
—
28.9
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.019
—
dB/°C
ΔP1dB
—
0.008
—
dBm/°C
Average Group Delay @ Pout = 190 W CW, f = 1960 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
3
Z22
R1
VBIAS
VSUPPLY
+
Z20
R2
C1
C2
C3
C10
C11
C12
C21
R3
RF
INPUT Z1
Z10
Z19
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C6
C4
Z14 Z15
C14
DUT
C5
RF
Z18 OUTPUT
C16
Z11 Z12 Z13
Z9
Z17
C15
C13
Z21
Z16
C17
Z23
+
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
C8
C18
C7
0.126″ x 0.066″ Microstrip
0.584″ x 0.079″ Microstrip
0.110″ x 0.079″ Microstrip
0.133″ x 0.079″ Microstrip
0.059″ x 0.118″ Microstrip
0.059″ x 0.118″ Microstrip
0.197″ x 0.102″ Microstrip
0.860″ x 0.551″ Microstrip
0.114″ x 0.551″ Microstrip
0.129″ x 1.102″ Microstrip
0.304″ x 1.102″ Microstrip
0.295″ x 0.276″ Microstrip
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22, Z23
PCB
C19
C20
C22
0.078″ x 0.102″ Microstrip
0.319″ x 0.102″ Microstrip
0.709″ x 0.220″ Microstrip
0.709″ x 0.220″ Microstrip
0.747″ x 0.066″ Microstrip
0.227″ x 0.066″ Microstrip
0.145″ x 0.090″ Microstrip
0.548″ x 0.090″ Microstrip
0.734″ x 0.090″ Microstrip
1.044″ x 0.100″ Microstrip
Taconic RF35, 0.030″, εr = 3.5
Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C9, C11, C12, C19, C20
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C2, C8
100 nF Chip Capacitors
12065C104KAT2A
AVX
C3, C6, C7, C10, C14, C15,
C18
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C4
0.2 pF Chip Capacitor
ATC100B0R2BT500XT
ATC
C5
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C13
0.4 pF Chip Capacitor
ATC100B0R4BT500XT
ATC
C16, C17
0.5 pF Chip Capacitors
ATC100B0R5BT500XT
ATC
C21, C22
470 μF Electrolytic Capacitors
222212018471
Vishay BC Components
R1, R2
10 kΩ, 1/4 W Chip Resistors
WCR120610KFI
Welwyn
R3
10 Ω, 1/4 W Chip Resistor
WCR120610RFI
Welwyn
MRF7S19210HR3 MRF7S19210HSR3
4
RF Device Data
Freescale Semiconductor
C1
R1
C10
C2
C11 C12
R2
C21
R3
C6
C4 C5
C8
C9
CUT OUT AREA
C3
C13
C14
C16
C15
C17
C22
C19 C20
C7
C18
MRF7S19210H
Rev 0
Figure 2. MRF7S19210HR3(HSR3) Test Circuit Component Layout
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
33
32
VDD = 28 Vdc, Pout = 63 W (Avg.)
IDQ = 1400 mA
31
19 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
18.5
30
18
PARC
17.5
−31
−2
−32
−4
−33
−34
17
IRL
16.5
16
1880
1900
ACPR
1920
1940
−35
1960
1980
2000
2020
−6
−8
−10
−36
2040
−12
−1.5
−2
−2.5
−3
PARC (dB)
19.5
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
20
ηD, DRAIN
EFFICIENCY (%)
20.5
34
ηD
Gps
ACPR (dBc)
21
−3.5
−4
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
IDQ = 2100 mA
1750 mA
1400 mA
19
18
1050 mA
VDD = 28 Vdc
f = 1960 MHz
17
700 mA
16
1
100
10
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−10
−20
IM3−U
−30
IM3−L
IM5−U
−40
IM5−L
IM7−L
−50
IM7−U
−60
10
1
300
100
Pout, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products
versus Two - Tone Spacing
20.5
19.5
19
18.5
18
17.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
20
1
Gps
0
PARC
40
−30
35
−2 −1 dB = 48.916 W
−3 dB = 90.739 W 30
−2 dB = 68.142 W
25
ηD
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
−4
−5
30
−25
ACPR
−1
−3
45
40
50
60
70
80
90
−35
−40
ACPR (dBc)
20
0
ηD, DRAIN EFFICIENCY (%)
21
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
22
−45
20
−50
15
−55
100
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7S19210HR3 MRF7S19210HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
85_C
18
60
−5
50
−10
40
30
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
16
20
ACPR
85_C
25_C
14
10
1
−20
−25
−30
−30_C
ηD
12
−15
ACPR (dBc)
−30_C
25_C
VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz
Single−Carrier W−CDMA, 3.84 MHz
22 Channel Bandwidth
85_C
TC = −30_C
25_C
20
Gps
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24
10
100
0
300
−35
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
20
109
10
−4
5
−6
VDD = 28 Vdc
Pout = 9 dBm
IDQ = 1400 mA
0
−5
1550
1650
1750
1850
−8
IRL
1950
2050
2150
2250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
−10
2350
108
MTTF (HOURS)
−2
IRL (dB)
GAIN (dB)
Gain
15
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
Input Signal
−50
0.1
(dB)
PROBABILITY (%)
−30
0.01
−70
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
2
4
6
−60
−80
−ACPR in 3.84 MHz
Integrated BW
−90
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single - Carrier W - CDMA Spectrum
MRF7S19210HR3 MRF7S19210HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
f = 2040 MHz
f = 2040 MHz
f = 1880 MHz
Zsource
Zload
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.
f
MHz
Zsource
W
Zload
W
1880
5.20 - j1.02
1.49 - j1.45
1900
4.90 - j1.00
1.52 - j1.30
1920
4.60 - j0.92
1.55 - j1.16
1940
4.31 - j0.82
1.58 - j1.04
1960
4.04 - j0.71
1.61 - j0.93
1980
3.80 - j0.56
1.66 - j0.82
2000
3.58 - j0.42
1.73 - j0.70
2020
3.38 - j0.30
1.81 - j0.57
2040
3.19 - j0.16
1.88 - j0.49
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60
60
58
59
Ideal
P3dB = 55.27 dBm (337 W)
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
59
57
56
P1dB = 54.35 dBm (272 W)
55
Actual
54
53
52
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1930 MHz
51
50
29
30
31
32
33
34
35
36
37
38
Ideal
P3dB = 55.25 dBm (335 W)
58
57
P1dB = 54.29 dBm (269 W)
56
55
Actual
54
53
52
VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1990 MHz
51
39
50
29
30
31
32
33
34
35
36
37
38
39
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
5.72 - j5.51
1.30 - j0.69
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V @ 1930 MHz
P1dB
Zsource
Ω
Zload
Ω
6.20 + j1.19
1.09 - j046
Figure 14. Pulsed CW Output Power
versus Input Power @ 28 V @ 1990 MHz
MRF7S19210HR3 MRF7S19210HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
11
MRF7S19210HR3 MRF7S19210HSR3
12
RF Device Data
Freescale Semiconductor
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
13
MRF7S19210HR3 MRF7S19210HSR3
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2008
Description
• Initial Release of Data Sheet
MRF7S19210HR3 MRF7S19210HSR3
RF Device Data
Freescale Semiconductor
15
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MRF7S19210HR3 MRF7S19210HSR3
Document Number: MRF7S19210H
Rev. 0, 12/2008
16
RF Device Data
Freescale Semiconductor