Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19210HR3 MRF7S19210HSR3 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 29% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 190 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930 - 1990 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S19210HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S19210HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 85°C, 190 W CW Case Temperature 79°C, 63 W CW RθJC 0.34 0.38 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S19210HR3 MRF7S19210HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGG(Q) 4 5.4 7 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 5.13 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.17 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 257 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 508 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 18 20 21.5 dB Drain Efficiency ηD 26 29 — % PAR 5.5 5.9 — dB ACPR — - 33 - 31 dBc IRL — - 9.5 -6 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S19210HR3 MRF7S19210HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth IMD Symmetry @ 160 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) MHz — 15 — VBWres — 50 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. GF — 0.9 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Φ — 0.95 — ° Delay — 2.82 — ns Part - to - Part Insertion Phase Variation @ Pout = 190 W CW, f = 1960 MHz, Six Sigma Window ΔΦ — 28.9 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.019 — dB/°C ΔP1dB — 0.008 — dBm/°C Average Group Delay @ Pout = 190 W CW, f = 1960 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 3 Z22 R1 VBIAS VSUPPLY + Z20 R2 C1 C2 C3 C10 C11 C12 C21 R3 RF INPUT Z1 Z10 Z19 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C6 C4 Z14 Z15 C14 DUT C5 RF Z18 OUTPUT C16 Z11 Z12 Z13 Z9 Z17 C15 C13 Z21 Z16 C17 Z23 + C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 C8 C18 C7 0.126″ x 0.066″ Microstrip 0.584″ x 0.079″ Microstrip 0.110″ x 0.079″ Microstrip 0.133″ x 0.079″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.197″ x 0.102″ Microstrip 0.860″ x 0.551″ Microstrip 0.114″ x 0.551″ Microstrip 0.129″ x 1.102″ Microstrip 0.304″ x 1.102″ Microstrip 0.295″ x 0.276″ Microstrip Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22, Z23 PCB C19 C20 C22 0.078″ x 0.102″ Microstrip 0.319″ x 0.102″ Microstrip 0.709″ x 0.220″ Microstrip 0.709″ x 0.220″ Microstrip 0.747″ x 0.066″ Microstrip 0.227″ x 0.066″ Microstrip 0.145″ x 0.090″ Microstrip 0.548″ x 0.090″ Microstrip 0.734″ x 0.090″ Microstrip 1.044″ x 0.100″ Microstrip Taconic RF35, 0.030″, εr = 3.5 Figure 1. MRF7S19210HR3(HSR3) Test Circuit Schematic Table 5. MRF7S19210HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C9, C11, C12, C19, C20 10 μF, 50 V Chip Capacitors C5750X5R1H106M TDK C2, C8 100 nF Chip Capacitors 12065C104KAT2A AVX C3, C6, C7, C10, C14, C15, C18 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C4 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C5 1.8 pF Chip Capacitor ATC100B1R8BT500XT ATC C13 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC C16, C17 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC C21, C22 470 μF Electrolytic Capacitors 222212018471 Vishay BC Components R1, R2 10 kΩ, 1/4 W Chip Resistors WCR120610KFI Welwyn R3 10 Ω, 1/4 W Chip Resistor WCR120610RFI Welwyn MRF7S19210HR3 MRF7S19210HSR3 4 RF Device Data Freescale Semiconductor C1 R1 C10 C2 C11 C12 R2 C21 R3 C6 C4 C5 C8 C9 CUT OUT AREA C3 C13 C14 C16 C15 C17 C22 C19 C20 C7 C18 MRF7S19210H Rev 0 Figure 2. MRF7S19210HR3(HSR3) Test Circuit Component Layout MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 33 32 VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA 31 19 Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 18.5 30 18 PARC 17.5 −31 −2 −32 −4 −33 −34 17 IRL 16.5 16 1880 1900 ACPR 1920 1940 −35 1960 1980 2000 2020 −6 −8 −10 −36 2040 −12 −1.5 −2 −2.5 −3 PARC (dB) 19.5 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 20 ηD, DRAIN EFFICIENCY (%) 20.5 34 ηD Gps ACPR (dBc) 21 −3.5 −4 f, FREQUENCY (MHz) Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. IDQ = 2100 mA 1750 mA 1400 mA 19 18 1050 mA VDD = 28 Vdc f = 1960 MHz 17 700 mA 16 1 100 10 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1400 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −10 −20 IM3−U −30 IM3−L IM5−U −40 IM5−L IM7−L −50 IM7−U −60 10 1 300 100 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Two - Tone Spacing 20.5 19.5 19 18.5 18 17.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) 20 1 Gps 0 PARC 40 −30 35 −2 −1 dB = 48.916 W −3 dB = 90.739 W 30 −2 dB = 68.142 W 25 ηD VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF −4 −5 30 −25 ACPR −1 −3 45 40 50 60 70 80 90 −35 −40 ACPR (dBc) 20 0 ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 22 −45 20 −50 15 −55 100 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF7S19210HR3 MRF7S19210HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 85_C 18 60 −5 50 −10 40 30 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 16 20 ACPR 85_C 25_C 14 10 1 −20 −25 −30 −30_C ηD 12 −15 ACPR (dBc) −30_C 25_C VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz 22 Channel Bandwidth 85_C TC = −30_C 25_C 20 Gps ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 24 10 100 0 300 −35 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 20 109 10 −4 5 −6 VDD = 28 Vdc Pout = 9 dBm IDQ = 1400 mA 0 −5 1550 1650 1750 1850 −8 IRL 1950 2050 2150 2250 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response −10 2350 108 MTTF (HOURS) −2 IRL (dB) GAIN (dB) Gain 15 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 7 W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 1 −40 Input Signal −50 0.1 (dB) PROBABILITY (%) −30 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −60 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 −ACPR in 3.84 MHz Integrated BW −100 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 11. Single - Carrier W - CDMA Spectrum MRF7S19210HR3 MRF7S19210HSR3 8 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 2040 MHz f = 2040 MHz f = 1880 MHz Zsource Zload f = 1880 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz Zsource W Zload W 1880 5.20 - j1.02 1.49 - j1.45 1900 4.90 - j1.00 1.52 - j1.30 1920 4.60 - j0.92 1.55 - j1.16 1940 4.31 - j0.82 1.58 - j1.04 1960 4.04 - j0.71 1.61 - j0.93 1980 3.80 - j0.56 1.66 - j0.82 2000 3.58 - j0.42 1.73 - j0.70 2020 3.38 - j0.30 1.81 - j0.57 2040 3.19 - j0.16 1.88 - j0.49 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 9 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 60 58 59 Ideal P3dB = 55.27 dBm (337 W) Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) 59 57 56 P1dB = 54.35 dBm (272 W) 55 Actual 54 53 52 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1930 MHz 51 50 29 30 31 32 33 34 35 36 37 38 Ideal P3dB = 55.25 dBm (335 W) 58 57 P1dB = 54.29 dBm (269 W) 56 55 Actual 54 53 52 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 1990 MHz 51 39 50 29 30 31 32 33 34 35 36 37 38 39 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 5.72 - j5.51 1.30 - j0.69 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V @ 1930 MHz P1dB Zsource Ω Zload Ω 6.20 + j1.19 1.09 - j046 Figure 14. Pulsed CW Output Power versus Input Power @ 28 V @ 1990 MHz MRF7S19210HR3 MRF7S19210HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 11 MRF7S19210HR3 MRF7S19210HSR3 12 RF Device Data Freescale Semiconductor MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 13 MRF7S19210HR3 MRF7S19210HSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Dec. 2008 Description • Initial Release of Data Sheet MRF7S19210HR3 MRF7S19210HSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF7S19210HR3 MRF7S19210HSR3 Document Number: MRF7S19210H Rev. 0, 12/2008 16 RF Device Data Freescale Semiconductor