FREESCALE MRF8S18120HR3_10

Freescale Semiconductor
Technical Data
Document Number: MRF8S18120H
Rev. 1, 10/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF8S18120HR3
MRF8S18120HSR3
Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout =
72 Watts CW
Frequency
Gps
(dB)
ηD
(%)
1805 MHz
18.2
49.8
1840 MHz
18.6
51.4
1880 MHz
18.7
53.9
1805--1880 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout =
46 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.9
41.0
--64
--76
1.6
1840 MHz
18.2
41.9
--63
--76
1.7
1880 MHz
18.3
43.2
--61
--76
2.0
CASE 465--06, STYLE 1
NI--780
MRF8S18120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S18120HSR3
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
1
Table 2. Thermal Characteristics
Characteristic
Value (1,2)
Symbol
Thermal Resistance, Junction to Case
Case Temperature 79°C, 72 W CW, 28 Vdc, IDQ = 800 mA
Case Temperature 79°C, 120 W CW, 28 Vdc, IDQ = 800 mA
RθJC
Unit
°C/W
0.47
0.46
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 260 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 800 mAdc, Measured in Functional Test)
VGS(Q)
1.8
2.6
3.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.3 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW, f = 1805 MHz
Power Gain
Gps
17
18.2
20
dB
Drain Efficiency
ηD
48
49.8
—
%
IRL
—
--11
--8
dB
P1dB
112
—
—
W
Input Return Loss
Pout @ 1 dB Compression Point, CW
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW
Frequency
Gps
(dB)
ηD
(%)
IRL
(dB)
1805 MHz
18.2
49.8
--11
1840 MHz
18.6
51.4
--15
1880 MHz
18.7
53.9
--12
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Part internally matched both on input and output.
(continued)
MRF8S18120HR3 MRF8S18120HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, 1805--1880 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
120
—
—
10
—
W
IMD Symmetry @ 94 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 72 W CW
GF
—
0.5
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.01
—
dB/°C
∆P1dB
—
0.004
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 800 mA, Pout = 46 W Avg.,
1805--1880 MHz EDGE Modulation
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.9
41.0
--64
--76
1.6
1840 MHz
18.2
41.9
--63
--76
1.7
1880 MHz
18.3
43.2
--61
--76
2.0
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
3
R2
C13
C9 C10
C3
C8
C4
C7
C11 C12
C6 C5
R1
C2
CUT OUT AREA
C1
MRF8S18120
Rev. 2
Figure 1. MRF8S18120HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S18120HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
12 pF Chip Capacitors
ATC100B120JT500XT
ATC
C3, C8
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C4
10 nF Chip Capacitor
C1825C103K1GAC--TU
Kemet
C5
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C6, C9
2.2 μF, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C7
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C10, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C13
330 μF, 63 V Electrolytic Capacitor
MCRH63V337M13X21--RH
Multicomp
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R2
4.75 Ω, 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
0.030″, εr = 2.55
250GX--0300--55--22
Arlon
MRF8S18120HR3 MRF8S18120HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
55
ηD
19
50
Gps
45
18
40
17
IRL
16
15
1760
1780
1800
1820
1840
1860
1880
1900
--5
--10
35
--15
30
1920
--20
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
20
60
VDD = 28 Vdc, Pout = 72 W CW, IDQ = 800 mA
ηD, DRAIN EFFICIENCY (%)
21
f, FREQUENCY (MHz)
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 72 Watts CW
40
19
Gps
18
35
17
3
IRL
16
15
1760
2
EVM
1780
1800
1820
1840
1860
1880
1900
1
1920
--5
--10
--15
--20
IRL, INPUT RETURN LOSS (dB)
45
ηD
ηD, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
20
50
VDD = 28 Vdc, Pout = 46 W Avg.
IDQ = 800 mA, EDGE Modulation
EVM, ERROR VECTOR
MAGNITUDE (% rms)
21
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 46 Watts Avg.
19
IM3--U
--30
IM3--L
--40
IM5--U
IM5--L
--50
Gps
45
17
1840 MHz
1880 MHz
16
10
100
14
30
1805 MHz
1
15
VDD = 28 Vdc
IDQ = 800 mA
ηD
IM7--U
--60
60
1805 MHz
15
IM7--L
1
1840 MHz
18
10
100
TWO--TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) CW
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
Figure 5. Power Gain and Drain Efficiency
versus Output Power
300
ηD, DRAIN EFFICIENCY (%)
--20
75
f = 1880 MHz
VDD = 28 Vdc, Pout = 94 W (PEP)
IDQ = 800 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
--10
0
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Pout = 72 W Avg.
4
3
46 W Avg.
2
25 W Avg.
1
0
1800
1820
1840
1880
1860
--65
--70
10
20
30
40
50
60
70
80
90
Pout, OUTPUT POWER (WATTS)
Figure 6. EVM versus Frequency
Figure 7. Spectral Regrowth at 400 kHz
versus Output Power
f = 1880 MHz
--65
1840 MHz
1805 MHz
--70
--75
--80
20
30
40
50
60
70
80
90
10
EVM, ERROR VECTOR MAGNITUDE (% rms)
SPECTRAL REGROWTH @ 600 kHz (dBc)
1805 MHz
--60
0
--60
10
1840 MHz
--55
f, FREQUENCY (MHz)
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
0
f = 1880 MHz
--50
1900
--50
--55
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
--45
75
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
8
100
60
f = 1880 MHz
6
45
1840 MHz
4
30
ηD
1805 MHz
2
EVM
15
1840 MHz
0
100
0
100
1
ηD, DRAIN EFFICIENCY (%)
5
--40
VDD = 28 Vdc, IDQ = 800 mA
EDGE Modulation
SPECTRAL REGROWTH @ 400 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% rms)
6
10
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS)
Figure 8. Spectral Regrowth at 600 kHz
versus Output Power
Figure 9. EVM and Drain Efficiency versus
Output Power
0
20
--5
10
--10
5
IRL
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 800 mA
0
1440 1540
1640
1740
1840
1940
IRL (dB)
GAIN (dB)
Gain
15
--15
2040
2140 2240
--20
2340
f, FREQUENCY (MHz)
Figure 10. Broadband Frequency Response
MRF8S18120HR3 MRF8S18120HSR3
6
RF Device Data
Freescale Semiconductor
GSM TEST SIGNAL
--10
--20
Reference Power
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
--30
--40
(dB)
--50
--60
--70
--80
--90
400 kHz
400 kHz
600 kHz
600 kHz
--100
--110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 11. EDGE Spectrum
VDD = 28 Vdc, IDQ = 800 mA, Pout = 72 W CW
f
MHz
Zsource
Ω
Zload
Ω
1760
1.53 -- j1.94
2.32 -- j0.41
1780
1.53 -- j1.82
2.31 -- j0.51
1800
1.56 -- j1.90
2.31 -- j0.49
1820
1.56 -- j1.86
2.32 -- j0.40
1840
1.57 -- j1.75
2.33 -- j0.26
1860
1.51 -- j1.64
2.29 -- j0.12
1880
1.49 -- j1.58
2.29 -- j0.01
1900
1.49 -- j1.55
2.29 + j0.05
1920
1.48 -- j1.53
2.31 + j0.06
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 800 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
57
Pout, OUTPUT POWER (dBm)
56
Ideal
f = 1840 MHz
55
f = 1840 MHz
54
53
52
51
f = 1800 MHz
50
49
f = 1800 MHz
48
47
46
f = 1880 MHz
f = 1880 MHz
Actual
28
29
30
31
32
33
35
34
36
37
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
1805
145
51.6
178
52.5
1840
141
51.5
178
52.5
1880
135
51.3
170
52.3
Test Impedances per Compression Level
f
(MHz)
Zsource
Ω
Zload
Ω
1805
P1dB
1.14 -- j4.65
1.54 -- j2.60
1840
P1dB
1.04 -- j4.88
1.49 -- j2.75
1880
P1dB
0.94 -- j4.59
1.50 -- j2.74
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
MRF8S18120HR3 MRF8S18120HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
9
MRF8S18120HR3 MRF8S18120HSR3
10
RF Device Data
Freescale Semiconductor
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
11
MRF8S18120HR3 MRF8S18120HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
• Initial Release of Data Sheet
1
Oct. 2010
• Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of
the device, p. 2
MRF8S18120HR3 MRF8S18120HSR3
RF Device Data
Freescale Semiconductor
13
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MRF8S18120HR3 MRF8S18120HSR3
Document Number: MRF8S18120H
Rev. 1, 10/2010
14
RF Device Data
Freescale Semiconductor