Freescale Semiconductor Technical Data Document Number: MRF9582NT1 Rev. 1, 7/2006 Silicon Lateral FET, N - Channel Enhancement - Mode MOSFET MRF9582NT1 Designed for use in medium voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Typical CW RF Performance @ 849 MHz: VDD = 12.5 Volts, IDQ = 300 mA, Pout = 38 dBm Power Gain — 10.5 dB Drain Efficiency — 55% • Capable of Handling 10:1 VSWR, @ 12.5 Vdc, 849 MHz, 38 dBm • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel 849 MHz, 38 dBm, 12.5 V HIGH FREQUENCY POWER TRANSISTOR LDMOS FET 3 1 2 4 CASE 449 - 02, STYLE 1 PLD - 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS 17 Vdc Drain - Gate Voltage (RGS = 1.0 MΩ) VDGO 17 Vdc VGS 4.0 Vdc ID 1.5 Adc Gate - Source Voltage Drain Current - Continuous Total Device Dissipation @ TC = 85°C PD 10.5 W Storage Temperature Range Tstg - 65 to 150 °C Operating Junction Temperature TJ 150 °C Symbol Value Unit RθJC 6 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction - to - Case Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF9582NT1 1 Table 4. Electrical Characteristics (TC = 25°C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0, ID = 100 nAdc) V(BR)DSS — 45 — Vdc Drain - Source Leakage Current (VDS = 12.5 Vdc, VGS = 0) IDSS — — 100 nAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 100 nAdc Off Characteristics On Characteristics VGS — 2.4 — Vdc RDS(on) 0.05 0.5 0.8 Ω Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 30.77 — pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Coss — 15.6 — pF Feedback Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz) Crss — 0.82 — pF Gps — 10.5 — dB ηD — 55 — % Pout — 38 — dBm Gate Threshold Voltage Resistance Drain - Source (VGS = 5 Vdc, ID = 300 mA) Dynamic Characteristics Typical Characteristics Power Gain (VDD = 12.5 Vdc, Pin = 27.5 dBm, f = 849 MHz) Drain Efficiency (VDD = 12.5 Vdc, Pin = 27.5 dBm, f = 849 MHz) Output Power MRF9582NT1 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 40 70 68 13.75 V EFFICIENCY (%) OUTPUT POWER (dBm) 39.5 39 12.50 V 38.5 38 11.25 V 37.5 37 820 825 835 840 845 850 13.75 V 66 12.50 V 64 11.25 V 62 Pin = 27.5 dBm TA = 25°C Vg = 2.4 V 830 Pin = 27.5 dBm TA = 25°C Vg = 2.4 V 60 820 855 825 830 −35°C 25°C 85°C Pin = 27.5 dBm VDD = 12.5 V Vg = 2.4 V 38.2 38 820 IDQ, QUIESCENT CURRENT (mA) OUTPUT POWER (dBm) 38.4 845 850 855 400 39 38.6 840 Figure 2. Efficiency versus Frequency Figure 1. Output Power versus Frequency 38.8 835 f, FREQUENCY (MHz) f, FREQUENCY (MHz) 825 830 835 840 845 850 855 85°C 350 300 250 25°C Pin = 27.5 dBm VDD = 12.5 V Vg = 2.4 V 200 150 −35°C 100 820 825 830 835 840 845 850 855 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency Figure 4. Quiescent Current versus Frequency MRF9582NT1 RF Device Data Freescale Semiconductor 3 f = 849 MHz Zsource Zo = 5 Ω Zload f = 849 MHz VDD = 12.5 Vdc, IDQ = 300 mA, Pout = 38 dBm f MHz Zsource Ω Zload Ω 849 2.5 + j0.5 2.5 - j2.5 Zsource = Test circuit impedance as measured from gate to ground. Zload Test circuit impedance as measured from drain to ground. = Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 5. Series Equivalent Source and Load Impedance MRF9582NT1 4 RF Device Data Freescale Semiconductor NOTES MRF9582NT1 RF Device Data Freescale Semiconductor 5 NOTES MRF9582NT1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS C L A S P 1 R B 4 3 2 Q K D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 PL J 8 PL N É É E W 8 PL H T G ÉÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉÉ M DRAFT 4 PL ZONE U ZONE V F Y X ÉÉ ÉÉ Z AA RESIN BLEED/FLASH ALLOWABLE 2 PL DIM A B C D E F G H J K L M N P Q R S T U V W X Y Z AA INCHES MIN MAX 0.185 0.195 0.175 0.185 0.058 0.064 0.017 0.023 0.014 0.017 0.027 0.033 0.071 0.077 0.017 0.023 0.000 0.007 0.018 0.026 0.253 0.263 5 _REF 1.75 REF 0.000 0.006 0.120 0.130 0.220 0.230 0.030 0.038 0.050 0.060 0.000 0.018 0.000 0.014 0.004 0.016 0.131 0.141 0.065 0.075 0.089 0.099 0.056 0.066 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 4.70 4.95 4.44 4.70 1.47 1.63 0.43 0.58 0.36 0.43 0.69 0.84 1.80 1.96 0.43 0.58 0.00 0.18 0.46 0.66 6.43 6.68 5 _REF 4.44 REF 0.00 0.15 3.05 3.30 5.59 5.84 0.76 0.97 1.27 1.52 0.00 0.46 0.00 0.36 0.10 0.41 3.33 3.58 1.65 1.90 2.26 2.51 1.42 1.67 DRAIN GATE SOURCE SOURCE CASE 449 - 02 ISSUE A MRF9582NT1 RF Device Data Freescale Semiconductor 7 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF9582NT1 Document Number: MRF9582NT1 8Rev. 1, 7/2006 RF Device Data Freescale Semiconductor