Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc 945 MHz, 60 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. CASE 360B−05, STYLE 1 NI−360 MRF9060LR1 CASE 360C−05, STYLE 1 NI−360S MRF9060LSR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain−Source Voltage VDSS −0.5, +65 Vdc Gate−Source Voltage VGS −0.5, + 15 Vdc PD 159 0.91 219 1.25 W W/°C W W/°C Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.1 0.8 °C/W Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. RF Device Data Freescale Semiconductor MRF9060LR1 MRF9060LSR1 5−1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) — 3.7 — Vdc Drain−Source On−Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.17 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 98 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 50 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF Off Characteristics On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (continued) MRF9060LR1 MRF9060LSR1 5−2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 16 17 — dB Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 36 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — −31 −28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — −16 −9 dB Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 17 — dB Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 39 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — −31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — −16 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) P1dB — 70 — W Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Gps — 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) η — 51 — % Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ Functional Tests (In Freescale Test Fixture, 50 ohm system) No Degradation In Output Power MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.180″ x 0.270″ Microstrip 0.350″ x 0.270″ Microstrip 0.270″ x 0.520 x 0.140″ Taper 0.170″ x 0.520″ Microstrip 0.410″ x 0.520″ Microstrip 0.060″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.330″ x 0.060″ Microstrip 0.230″ x 0.060″ Microstrip 0.740″ x 0.060″ Microstrip 0.130″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF−35−0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic Table 5. 945 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 95F786 Newark B2 Long Ferrite Bead 95F787 Newark C1, C7, C13, C14 47 pF Chip Capacitors 100B470JP 500X ATC C2, C3, C11 0.8−8.0 Gigatrim Variable Capacitors 44F3360 Newark C4, C5, C8, C9 10 pF Chip Capacitors 100B100JP 500X ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitor 93F2975 Newark C10 3.0 pF Chip Capacitor 100B3R0JP 500X ATC C12 0.5 pF Chip Capacitor (MRF9060) 0.7 pF Chip Capacitor (MRF9060S) 100B0R5BP 500X 100B0R7BP 500X ATC ATC C17 220 mF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Inductors A04T−5 Coilcraft N1, N2 N−Type Panel Mount, Stripline 3052−1648−10 Avnet WB1, WB2 10 mil Brass Wear Blocks MRF9060LR1 MRF9060LSR1 5−4 RF Device Data Freescale Semiconductor CUT OUT AREA MRF9060 900 MHz Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 − 960 MHz Broadband Test Circuit Component Layout MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−5 34 h 6 &' *+, 6 % ( / 6 7" ! :**; !<4+87;,) =12 *; $3<'>;? .) / 0 %!12( )## $$#%&( 34 )# #"#%&( !)# !" $#%&'( h )#" 0#%5( TYPICAL CHARACTERISTICS / 6 7" 34 )# #"#%&( #7" #7" #7" 6 &' . 6 !12 . 6 !12 Figure 4. Power Gain versus Output Power / 6 7" 7" 7" 7" 6 &' . 6 !12 . 6 !12 *+,) %"$( Figure 5. Intermodulation Distortion versus Output Power 6 &' / 6 7" . 6 !12 . 6 !12 h 8&8 34 34)# #"#%&( !) !"#$#%&'( *+,) %"$( ,9#8&8 *+,) %"$( 6 &' / 6 7" . 6 !12 ,9#8&8 Figure 6. Intermodulation Distortion Products versus Output Power h)#"# 0#%5( !)# !"#$#%&'( Figure 3. Class AB Broadband Circuit Performance *+,) %"$( " Figure 7. Power Gain and Efficiency versus Output Power MRF9060LR1 MRF9060LSR1 5−6 RF Device Data Freescale Semiconductor 34 34)# #"#%&( 6 &' / 6 7" . 6 !12 . 6 !12 h ! h)#"# 0#%5( !)# !"#$#%&'( TYPICAL CHARACTERISTICS *+,) %"$( Figure 8. Power Gain, Efficiency, and IMD versus Output Power MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−7 * 6 Ω 4*+8' @*<& . 6 !12 . 6 !12 . 6 !12 . 6 !12 6 ) / 6 7") *+, 6 f MHz Zload Ω Zsource Ω 930 0.80 − j0.10 2.08 − j0.65 945 0.80 − j0.05 2.07 − j0.38 960 0.81 − j0.10 2.04 − j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. +,3+, !<,'9>;? ,:*8= >' ;&8 4, ;3+, !<,'9>;? ,:*8= Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 MRF9060LSR1 5−8 RF Device Data Freescale Semiconductor NOTES MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−9 NOTES MRF9060LR1 MRF9060LSR1 5−10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q <<< 2X G B ! " ! ! $A ! $$ " " $ "$! 0! ! $A 1 ! $ 1 $ ! "$ % ( ""0 ! "B" 0 1 3 B 2 (FLANGE) D CCC ! " K 2X 2X ! R ! (LID) ''' ''' N (LID) " ! ! ! " ! ! F H ! C E S (INSULATOR) T CCC M (INSULATOR) A <<< SEATING PLANE ! " ! A ! " ! ! ! DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX #$ # # # MILLIMETERS MIN MAX #$ # # # $0 A " " $ CASE 360B−05 ISSUE F NI−360 MRF9060LR1 A A (FLANGE) B 1 $A ! $$ " " $ "$! 0! ! $A 1 ! $ 1 $ ! "$ % ( ""0 ! "B" 0 2 B (FLANGE) 2X D CCC ! " ! 2X K ! R (LID) ''' N (LID) ''' ! " ! ! ! " ! ! F H E C S (INSULATOR) PIN 3 T M (INSULATOR) CCC ! " ! SEATING PLANE <<< ! " ! ! CASE 360C−05 ISSUE D NI−360S MRF9060LSR1 ! DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX # # # MILLIMETERS MIN MAX # # # $0 A " " $ MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Semiconductor 5−11 How to Reach Us: Home Page: www.freescale.com E−mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1−800−521−6274 or +1−480−768−2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1−8−1, Shimo−Meguro, Meguro−ku, Tokyo 153−0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004. All rights reserved. MRF9060LR1 MRF9060LSR1 Document Number: MRF9060 Rev. 8, 12/2004 5−12 RF Device Data Freescale Semiconductor