MSK MSK3018

ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP.
THREE PHASE BRIDGE
MOSFET POWER MODULE
3018
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
Designed for Higher Current, Bottom Side Braking
Pin Compatible with MPM3003
P and N Channel MOSFETs for Ease of Drive
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
Interfaces Directly with Most Brushless Motor Drive IC's
55 Volt, 10 Amp P-Channel, 30 Amp N-Channel
DESCRIPTION:
The MSK 3018 is a three phase bridge power circuit packaged in a space efficient isolated ceramic tab power SIP
package. Consisting of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors, the MSK 3018 will interface directly with most brushless motor drive IC's without special gate driving requirements. The MSK 3018 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3018 is a replacement
for the MPM3003 with higher current capability when turning on all the N-Channel FETs for braking.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
PIN-OUT INFORMATION
Three Phase Brushless DC Motor Servo Control
Disk Drive Spindle Control
Fin Actuator Control
Az-El Antenna Control
1
1
2
3
4
5
6
Source 2,4,6
Gate 2
Gate 1
Drain 1,2
Gate 4
Drain 3,4
12
11
10
9
8
7
Source 1,3,5
Source 1,3,5
Gate 5
Drain 5,6
Gate 6
Gate 3
Rev. A 7/00
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage (Continuous)
Continuous Current (N-Channel)
(P-Channel)
Pulsed Current (N-Channel)
(P-Channel)
Thermal Resistance (Junction to Case)
(N-Channel FETs)
(P-Channel FETs)
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VGS
ID
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IDM
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RTH-JC
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55V
±20V
30A
14A
40A
20A
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55V MAX
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MAX
MAX
MAX
MAX
MAX
MAX
TJ
TST
TC
TLD
Single Pulse Avalanche Energy
570mJ
(Q2,Q4,Q6)
180mJ
(Q1,Q3,Q5)
+175°C MAX
Junction Temperature
-55°C to +150°C
Storage Temperature
Case Operating Temperature Range -55°C to +125°C
Lead Temperature Range
300°C MAX
(10 Seconds)
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2°C/W
6°C/W
ELECTRICAL SPECIFICATIONS
Parameter
Test Conditions 4
Drain-Source Breakdown Voltage
VDS=55V VGS=0V (Q2,Q4,Q6)
Drain-Source Leakage Current
VDS=-55V VGS=0V (Q1,Q3,Q5)
Gate-Source Leakage Current
VGS=±20V VDS=0 (All Transistors)
VDS=VGS ID=250µA (Q2,Q4,Q6)
Gate-Source Threshold Voltage
VDS=VGS ID=250µA (Q1,Q3,Q5)
Drain-Source On Resistance 2 5
VGS=10V ID=10A (Q2,Q4,Q6)
VGS=-10V ID=-10A (Q1,Q3,Q5)
VGS=10V ID=10A (Q2,Q4,Q6)
Drain-Source On Resistance 3
VGS=10V ID=-10A (Q1,Q3,Q5)
VDS=25V ID=10A (Q2,Q4,Q6)
1
Forward Transconductance
VGS=0 ID=0.25mA (All Transistors)
VDS=-25V ID=-10A (Q1,Q3,Q5)
MSK3018
Units
Min.
55
2.0
-2.0
30
4.2
Typ.
-
Max.
25
-25
±100
4.5
-4.5
0.04
0.16
0.013
0.10
-
-
14
62
47
58
3400
830
240
150
24
55
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
-
13
55
130
41
620
280
140
35
7.9
16
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
-
1.3
-1.6
120
54
510
110
190
82
760
160
V
V
nS
nS
nC
nC
V
µA
µA
nA
V
V
Ω
Ω
Ω
Ω
S
S
N-Channel (Q2,Q4,Q6)
1
Total Gate Charge
ID=30A
1
VDS=44V
Turn-On Delay Time 1
VDD=28V
Gate-Source Charge
1
Gate-Drain Charge
Rise Time
1
ID=30A
Turn-Off Delay Time
Fall Time
VGS=10V
1
RG=2.5Ω
1
Input Capacitance
RD=0.93Ω
1
VGS=0V
1
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
1
f=1MHz
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
1
ID=-10A
Gate-Source Charge 1
VDS=-44V
Gate-Drain Charge 1
VGS=-10V
Turn-On Delay Time 1
VDD=-28V
Rise Time
1
ID=-10A
1
Turn-Off Delay Time
Fall Time
RG=13Ω
1
Input Capacitance
Output Capacitance
RD=2.6Ω
1
VGS=0V
1
VDS=-25V
Reverse Transfer Capacitance 1
f=1MHz
BODY DIODE
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
1
2
3
4
5
IS=30A VGS=0V (Q2,Q4,Q6)
1
IS=-10A VGS=0V (Q1,Q3,Q5)
IS=30A di/dt=100A/µS (Q2,Q4,Q6)
1
IS=-10A di/dt=100A/µS (Q1,Q3,Q5)
1
IS=30A di/dt=100A/µS (Q2,Q4,Q6)
IS=-10A di/dt=100A/µS (Q1,Q3,Q5)
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
Rev. A 7/00
2
Test limits due to autotest fixturing constraints.
APPLICATION NOTES
N-CHANNEL GATES (Q2,Q4,Q6)
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on.
This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON
and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate
ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise
in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's
have sufficient gate drive capability for the MSK 3018. If not, paralleled CMOS standard gates will usually be sufficient. A series
resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The
selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
Figure 1
P-CHANNEL GATES (Q1,Q3,Q5)
Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel gate to
source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for directly interfacing
with the P-channel gates. If not, an external common emitter switching transistor configuration (see Figure 2) will turn the PChannel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply voltages, additional circuitry must be
used to protect the P-Channel gate from excessive voltages.
Figure 2
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 3.
Figure 3
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
Rev. A 7/00
3
TYPICAL PERFORMANCE CURVES
4
Rev. A 7/00
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED.
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
PART
NUMBER
SCREENING LEVEL
MSK 3018
Industrial
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
5
Rev. A 7/00