2990

NTE2990
MOSFET
P−Channel, Enhancement Mode
High Speed Switch
TO220 Full Pack
Features:
D Low Drain−Source On−Resistance
D Low Input Capacitance
D High Avalanche Capability Ratings
Applications:
D Switching Regulators
D UPS
D DC−DC Converters
D General Purpose Power Amplifier
D
G
S
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A
Maximum Power Dissipation, PD
TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W
Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ
Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.775C/W
Note 1. Pulse Width 3 10+s, Duty Cycle 3 1%.
Note 2. Starting Tch = +255C, RG = 25", VGS = −20V " 0.
Rev. 10−13
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
0.55
0.80
"
Drain−Source On−State Resistance
RDS(on)
ID = 3A, VGS = 10V
Gate Threshold Voltage
VGS(th)
ID = 1mA, VDS = 10V
4.0
4.8
5.5
V
ID = 3A, VDS = 10V
2.0
3.5
−
S
Forward Transfer Admittance
gfs
Zero Gate Voltage Drain Current
IDSS
VDS = 250V, VGS = 0V
−
−
100
+A
Gate−Source Leakage Current
IGSS
VGS = +30V, VDS = 0V
−
−
+100
nA
Input Capacitance
Ciss
VDS = 10V, VGS = 0V, f = 1MHz
−
1040
−
pF
Output Capacitance
Coss
−
360
−
pF
Reverse Transfer Capacitance
Crss
−
70
−
pF
Turn−On Time
td(on)
−
25
−
ns
−
16
−
ns
−
47
−
ns
−
14
−
ns
−
23.1
−
nC
Rise Time
VDD = 125V, ID = 3A,
VGS(on) = 10V, RG = 10",
RL = 42"
tr
Turn−Off Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
7.1
−
nC
Gate−Drain (“Miller”) Charge
Qgd
−
12.9
−
nC
VDD = 200V, VGS = 10V, ID = 6A
Source−Drain Diode Ratings and Characteristics: (TA = +255C unless otherwise specified)
Diode Forward Voltage
VDSF
IDR = 6A, VGS = 0V
−
0.92
−
V
Reverse Recovery Time
trr
−
155
−
ns
Reverse Recovered Charge
Qrr
IDR = 6A, VGS = 0V,
di/dt = 50A/+s
−
930
−
nC
.173 (4.4) Max
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
G
D
S
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.114 (2.9) Max