NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch TO220 Full Pack Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier D G S Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +6A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +24A Maximum Power Dissipation, PD TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W TA = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W Single Avalanche Current (Note 2), IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Single Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.55C/W Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.775C/W Note 1. Pulse Width 3 10+s, Duty Cycle 3 1%. Note 2. Starting Tch = +255C, RG = 25", VGS = −20V " 0. Rev. 10−13 Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 0.55 0.80 " Drain−Source On−State Resistance RDS(on) ID = 3A, VGS = 10V Gate Threshold Voltage VGS(th) ID = 1mA, VDS = 10V 4.0 4.8 5.5 V ID = 3A, VDS = 10V 2.0 3.5 − S Forward Transfer Admittance gfs Zero Gate Voltage Drain Current IDSS VDS = 250V, VGS = 0V − − 100 +A Gate−Source Leakage Current IGSS VGS = +30V, VDS = 0V − − +100 nA Input Capacitance Ciss VDS = 10V, VGS = 0V, f = 1MHz − 1040 − pF Output Capacitance Coss − 360 − pF Reverse Transfer Capacitance Crss − 70 − pF Turn−On Time td(on) − 25 − ns − 16 − ns − 47 − ns − 14 − ns − 23.1 − nC Rise Time VDD = 125V, ID = 3A, VGS(on) = 10V, RG = 10", RL = 42" tr Turn−Off Time td(off) Fall Time tf Total Gate Charge Qg Gate−Source Charge Qgs − 7.1 − nC Gate−Drain (“Miller”) Charge Qgd − 12.9 − nC VDD = 200V, VGS = 10V, ID = 6A Source−Drain Diode Ratings and Characteristics: (TA = +255C unless otherwise specified) Diode Forward Voltage VDSF IDR = 6A, VGS = 0V − 0.92 − V Reverse Recovery Time trr − 155 − ns Reverse Recovered Charge Qrr IDR = 6A, VGS = 0V, di/dt = 50A/+s − 930 − nC .173 (4.4) Max .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .165 (4.2) .669 (17.0) Max G D S .531 (13.5) Min .100 (2.54) .059 (1.5) Max .114 (2.9) Max