2903

NTE2903
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Full Pack Type Package
Features:
D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ
D High Forward Transfer Admittance: |yfs| = 3.5S Typ
D Low Leakage Current: IDSS = 100A (VDS = 500V)
D Enhancement Mode: Vth = 2.0 to 4.0V (VDS = 10V, ID = 1mA)
D
G
S
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain−Gate Voltage (RGS = 20k), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current (Note 2), ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Pulsed (t = 1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Drain Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35W
Single Pulse Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mJ
Avalanche Current, IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Repetitive Avalanche Energy (Note 4), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5mJ
Channel Temperature, TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Channel−to−Case, RthCHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.57C/W
Thermal Resistance, Channel−to−Ambient, RthCHA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W
Note 1. This transistor is an electrostatic−sensitive device. Please handle with caution. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the “Absolute maximum Ratings”.
Note 2. Ensure that the channel temperature does not exceed +150C.
Note 3. VDD = 90V, TCH = +25C (initial), L = 12.2mH, IAR = 5A, RG = 25.
Note 4. Repetitive rating: pulse width limited by maximum channel temperature.
Rev. 9−14
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Gate Leakage Current
Symbol
Test Conditions
Min
Typ
Max
Unit
IGSS
VGS = 25V, VDS = 0V
−
−
10
A
V(BR)GSS
IG = 10A, VDS = 0V
30
−
−
V
IDSS
VDS = 500V, VGS = 0V
−
−
100
A
V(BR)DSS
ID = 10mA, VGS = 0V
500
−
−
V
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
−
4.0
V
Drain−Source ON Resistance
RDS(on)
VGS = 10V, ID = 2.5A
−
1.35
1.50

Forward Transfer Admittance
|yfs|
VDS = 10V, ID = 2.5A
1.5
3.5
−
S
Input Capacitance
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
−
550
−
pF
Output Capacitance
Coss
−
70
−
pF
Reverse Transfer Capacitance
Crss
−
7
−
pF
Turn−On Delay Time
td(on)
−
20
−
ns
−
10
−
ns
−
50
−
ns
−
10
−
ns
−
16
−
nC
Gate−Source Breakdown Voltage
Drain Cut−Off Current
Drain−Source Breakdown Voltage
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VDD ] 225V, VGS = 10V,
ID = 2.5A, RL = 90, Duty x 1%,
tw = 10s
tf
Total Gate Charge
Qg
Gate−Source Charge
Qgs
−
10
−
nC
Gate−Drain (“Miller”) Charge
Qgd
−
6
−
nC
ID = 5A, VDD ] 400V, VGS = 10V
Source−Drain Ratings and Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Continuous Drain Reverse Current
IDR
Note 2
−
−
5
A
Pulsed Drain Reverse Current
IDRP
Note 2
−
−
20
A
Diode Forward Voltage
VDSF
IDR = 5A, VGS = 0V
−
−
−1.7
V
Reverse Recovery Time
trr
−
1400
−
ns
Reverse Recovery Charge
Qrr
IDR = 5A, VGS = 0V
dIDR/dt = 100A/s
−
9
−
C
Note 2. Ensure that the channel temperature does not exceed +150C.
.181 (4.6) Max
.126 (3.2) Dia Max
.114 (2.9)
.405 (10.3)
Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)