2DB1184Q 50V PNP SURFACE MOUNT TRANSISTOR IN TO252-3L Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.34 grams (approximate) TO252-3L C B E Device Schematic Top View Pin Out Configuration Top view Ordering Information (Note 3) Notes: Product Marking Reel size (inches) Tape width (mm) Quantity per reel 2DB1184Q-13 2DB1184Q 13 16 2,500 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW 2DB1184Q 2DB1184Q Document number: DS31504 Rev. 4 - 2 2DB1184Q = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 08 = 2008) WW = Week Code 01-52 1 of 6 www.diodes.com June 2011 © Diodes Incorporated 2DB1184Q Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -60 -50 -5 -3 -4.5 Unit V V V A A Value 15 8.3 1.2 104 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Case Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB with minimum pad size recommended. Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance Notes: Symbol PD RθJC PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVCBO BVCEO BVEBO ICBO IEBO -60 -50 -5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 -1 V V V μA μA IC = -50μA, IE = 0 IC = -1mA, IB = 0 IE = -50μA, IC = 0 VCB = -40V, IE = 0 VEB = - 4V, IC = 0 VCE(sat) VBE(sat) hFE ⎯ ⎯ 120 ⎯ ⎯ ⎯ -1 -1.2 270 V V ⎯ IC = -2A, IB = -0.2A IC = -1.5A, IB = -0.15A VCE = -3V, IC = -0.5A fT ⎯ 110 ⎯ MHz Cobo ⎯ 26 ⎯ pF VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 2DB1184Q Document number: DS31504 Rev. 4 - 2 2 of 6 www.diodes.com June 2011 © Diodes Incorporated 2DB1184Q 1,000 400 VCE = -3V 800 IB = -5mA IB = -4mA 600 IB = -3mA 400 IB = -2mA TA = 150°C 300 hFE, DC CURRENT GAIN -IC, COLLECTOR CURRENT (mA) 350 TA = 125°C 250 T A = 85°C 200 TA = 25°C 150 100 200 TA = -55°C IB = -1mA 50 0 0.001 0 0.1 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current 0.4 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.3 0.2 TA = 150°C TA = 125°C 0.1 T A = 85°C TA = 25°C T A = -55°C 0 0.001 1.2 VCE = -3V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 125°C 0.2 TA = 150°C 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1,000 1.2 f = 1MHz IC/IB = 10 1.0 0.8 CAPACITANCE (pF) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage T A = -55°C TA = 25°C 0.6 TA = 85°C T A = 125°C 0.4 TA = 150°C Cibo 100 Cobo 0.2 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 2DB1184Q Document number: DS31504 Rev. 4 - 2 3 of 6 www.diodes.com 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics June 2011 © Diodes Incorporated 2DB1184Q 140 10 VCE = -5V f = 30MHz IC, COLLECTOR CURRENT (A) fT, GAIN-BANDWIDTH PRODUCT (MHz) Pw = 100µs (mA) 120 100 80 60 40 Pw = 100ms (mA) 1 Pw = 10ms (mA) Pw = 1ms (mA) DC (mA) 0.1 20 TA = 25°C Single Non-repetitive Pulse 0.01 0 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 8 Safe Operating Area (Note 3) r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 110°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * R θJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 9 Transient Thermal Response 2DB1184Q Document number: DS31504 Rev. 4 - 2 4 of 6 www.diodes.com June 2011 © Diodes Incorporated 2DB1184Q Package Outline Dimensions E b3 L3 D b2 L4 e b A1 A H a SEATING PLANE L C2 TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0° 10° All Dimensions in mm Suggested Pad Layout X2 Dimensions Z X1 X2 Y1 Y2 C E1 Y2 C Z Y1 X1 2DB1184Q Document number: DS31504 Rev. 4 - 2 Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3 E1 5 of 6 www.diodes.com June 2011 © Diodes Incorporated 2DB1184Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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