UNISONIC TECHNOLOGIES CO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA ~ 50mA. 1 TO-92 ORDERING INFORMATION Order Number Lead Free Halogen Free 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R 2N5089L-T92-B 2N5089G-T92-B 2N5089L-T92-K 2N5089G-T92-K 2N5089L-T92-R 2N5089G-T92-R Note: Pin Assignment: E: Emitter B: Base C: Collector www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., LTD Package TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C E B C E B C E B C E B C Packing Tape Box Bulk Tape Reel Tape Box Bulk Tape Reel 1 of 3 QW-R201-040.Ba 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT 30 Collector-Emitter voltage VCEO V 25 35 Collector-Base voltage VCBO V 30 Emitter-Base Voltage VEBO 4.5 V Collector Current-Continuous IC 100 mA Power Dissipation 625 mW PD Derate Above 25℃ mW/℃ 5 ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 Note 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2N5088 2N5089 2N5088 2N5089 THERMAL DATA (TA=25℃, unless otherwise noted) PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 200 83.3 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector Cut-Off Current SYMBOL 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 Emitter Cutoff Current TEST CONDITIONS V(BR)CBO IC=100μA, IE=0 IEBO VCB=20V, IE=0 VCB=15V, IE=0 VEB=3.0V, IC=0 VEB=4.5V, IC=0 VCE=5.0V, IC=100μA DC Current Gain hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA (Note) IC=10mA, IB=1.0mA IC=10mA, VCE=5.0V 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter On Voltage VBE(ON) SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT VCE=5.0mA, IC=500μA, f=20MHz Collector-Base Capacitance CCB VCB=5.0V, IE=0, f=100kHz Emitter-Base Capacitance CEB VEB=0.5V, IC=0, f=100kHz 2N5088 Small-Signal Current Gain hFE VCE=5.0V, IC=1.0mA, f=1.0kHz 2N5089 2N5088 VCE=5.0V, IC=100μA, RS=10kΩ, Noise Figure NF f=10KHz ~ 15.7kHz 2N5089 Note Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX 30 25 35 30 V(BR)CEO IC=1.0mA, IB=0 (Note) ICBO MIN 300 400 350 450 300 400 V V 50 50 50 100 900 1200 0.5 0.8 50 350 450 UNIT 4 10 1400 1800 3.0 2.0 nA nA V V MHz pF pF dB 2 of 3 QW-R201-040.Ba 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-040.Ba