NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 • Hermetic SMD0.5 Ceramic Surface Mount. • Ideally Suited for Power Amplifier and Switching Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 400V 300V 6V 5A 1.0A 76W 0.43W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case - TC = 25°C Min. Typ. Max. Units 2.3 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9189 Issue 1 Page 1 of 3 NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 1.0mA RBE = 100Ω V(BR)EBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = 10µA IC = 0A ICES Collector-Emitter Cut-Off Current ICBO Collector-Base Cut-Off Current V(BR)CER (1) (1) hFE Forward-current transfer ratio (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Typ Max. V 6 0.2 TA = 150°C 100 VCB = 300V 0.1 VCB = 400V 1.0 VCE = 2V 25 VCE = 5V 25 TA = -55°C 10 IC = 3A VCE = 5V 10 IC = 5A VCE = 5V 5 IC = 3A IB = 0.6A 0.4 IC = 5A IB = 1.0A 1.0 IC = 3A IB = 0.6A 1.2 IC = 5A IB = 1.0A 1.5 IC = 0.5A VCE = 5V IC = 1.0A Units 400 VCE = 300V IC = 0.5A (1) Min. µA mA 75 - V DYNAMIC CHARACTERISTICS | hfe | Magnitude of CommonEmitter Small-Signal ShortCircuit forward Current, Transfer Ratio Cobo Output Capacitance ton Turn-On Time 2 f = 10MHz VCB = 10V IE = 0 f = 1.0MHz IC = 1.0A VCC = 100V 7 - 120 pF 0.4 µs toff Turn-Off Time IB1 = - IB2 = 50mA 2.5 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9189 Issue 1 Page 2 of 3 NPN POWER SILICON SWITCHING TRANSISTOR 2N5667N1 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 1 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 3.05 (0.120) 0.127 (0.005) 2 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) SMD0.5 (TO-276AA) Underside View Pad 1 – Emitter Pad 2 – Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pad 3 - Base Website: http://www.semelab-tt.com Document Number 9189 Issue 1 Page 3 of 3