SEME-LAB BUX78

SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BUX78
•
High Power
•
Hermetic TO-66 Metal Package
•
Ideally suited for Driver Circuits, Switching
and Amplifier Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
-100V
-80V
-6V
5A
0.8A
40W
0.23W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
4.4
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8580
Issue 1
Page 1 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BUX78
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = -50mA
IB = 0
-80
IC = -2mA
VBE = 0
-100
V(BR)EBO
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = -1.0mA
IC = 0
ICEO
Collector Cut-Off Current
VCE = -60V
IB = 0
-10
ICBO
Collector Cut-Off Current
VCB = -80V
IE = 0
-0.5
TC = 150°C
-150
IEBO
Emitter Cut-Off Current
VEB = -4V
IC = 0
-0.5
IC = -0.5A
VCE = -5V
50
IC = -2A
VCE = -5V
50
IC = -5A
VCE = -5V
30
IC = -1.0A
VCE = -5V
(1)
V(BR)CEO
V(BR)CES
hFE
Forward-current transfer
ratio
(1)
Min.
(1)
VBE(sat)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Max.
Units
V
-6
µA
120
25
TC = -40°C
VCE(sat)
Typ
IC = -5A
IB = -0.5A
-1.0
IC = -5A
IB = -0.5A
-1.3
IC = -0.5A
VCE = -5V
V
DYNAMIC CHARACTERISTICS
|hfe|
Small signal forward-current
transfer ratio
ton
Turn-On Time
toff
Turn-Off Time
1.5
f = 20MHz
IC = -5A
VCC = -40V
IB1 = -0.5A
IC = -5A
VCC = -40V
IB1 = - IB2 = -0.5A
0.3
0.4
µs
1.1
2.5
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8580
Issue 1
Page 2 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BUX78
MECHANICAL DATA
Dimensions in mm (inches)
6.35 (0.250)
8.64 (0.340)
2
11.94 (0.470)
12.70 (0.500)
1
0.71 (0.028)
0.86 (0.034)
3.61 (0.142)
4.08(0.161)
rad.
14.48 (0.570)
14.99 (0.590)
24.13 (0.95)
24.63 (0.97)
3.68
(0.145) rad.
max.
1.27 (0.050)
1.91 (0.750)
4.83 (0.190)
5.33 (0.210)
9.14 (0.360)
min.
TO66 (TO-213AA)
Pin 1 - Base
Pin 2 - Emitter
Case - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8580
Issue 1
Page 3 of 3