FAIRCHILD NDC7001

March 1996
NDC7001C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These dual N and P-channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
These devices is particularly suited for low voltage, low
current, switching, and power supply applications.
N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V
P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V.
High density cell design for low RDS(ON).
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current.
____________________________________________________________________________________________
4
3
5
2
6
1
SuperSOTTM-6
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage - Continuous
ID
Drain Current - Continuous
(Note 1a)
- Pulsed
PD
Maximum Power Dissipation
P-Channel
Units
50
-50
V
20
-20
V
0.51
-0.34
A
1.5
-1
(Note 1a)
0.96
(Note 1b)
0.9
(Note 1c)
TJ,TSTG
N-Channel
Operating and Storage Temperature Range
W
0.7
-55 to 150
°C
(Note 1a)
130
°C/W
(Note 1)
60
°C/W
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
© 1997 Fairchild Semiconductor Corporation
NDC7001C.SAM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
VGS = 0 V, ID = 250 µA
N-Ch
50
VGS = 0 V, ID = -250 µA
P-Ch
-50
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VDS = 40 V, VGS = 0 V
V
N-Ch
1
TJ = 125°C
P-Ch
VDS = -40 V, VGS = 0 V
µA
500
-1
-500
TJ = 125°C
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
All
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS= 0 V
All
-100
nA
VDS = VGS, ID = 250 µA
N-Ch
2.5
V
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
TJ = 125°C
VDS = VGS, ID = -250 µ.A
P-Ch
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 0.51 A
1
0.8
1.5
2.2
-1
-2.5
-3.5
-0.8
-2.2
-3
1
2
1.7
3.5
1.6
4
N-Ch
TJ = 125°C
VGS = 4.5 V, ID = 0.35 A
VGS = -10 V, ID = -0.34 A
P-Ch
TJ = 125°C
VGS = -4.5 V, ID = -0.25 A
ID(on)
On-State Drain Current
gFS
Forward Transconductance
1.9
2.5
5
4
10
5.3
7.5
N-Ch
1.5
VGS = -10 V, VDS = -10 V
P-Ch
-1
VDS = 10 V, ID = 0.51 A
N-Ch
400
VDS = -10 V, ID = -0.34 A
P-Ch
250
N-Channel
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
N-Ch
20
VGS = 10 V, VDS = 10 V
Ω
A
mS
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
P-Channel
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
P-Ch
40
N-Ch
13
P-Ch
13
N-Ch
5
P-Ch
4
pF
pF
pF
NDC7001C.SAM
Electrical Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameters
Conditions
Type
N-Channel
VDD = 25 V, ID = 0.25 A,
VGS = 10 V, RGEN = 25 Ω
Min
Typ
Max
Units
N-Ch
6
20
nS
P-Ch
14
20
N-Ch
6
20
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
P-Channel
VDD = -25 V, ID = -0.25 A,
VGS = -10 V, RGEN = 25 Ω
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
P-Ch
6
20
N-Ch
11
20
P-Ch
13
20
N-Ch
5
20
P-Ch
6
20
N-Channel
VDS = 25 V,
ID = 0.51 A, VGS = 10 V
N-Ch
1
P-Ch
1.3
N-Ch
0.19
P-Channel
VDS = -25 V,
ID = -0.34 A, VGS = -10 V
P-Ch
0.23
N-Ch
0.33
P-Ch
0.38
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuous Source Current
ISM
Maximum Pulse Source Current (Note 2)
VSD
Drain-Source Diode Forward Voltage
N-Ch
0.51
P-Ch
-0.34
N-Ch
1.5
P-Ch
-1
VGS = 0 V, IS = 0.51 A (Note 2)
N-Ch
0.8
1.2
VGS = 0 V, IS = -0.34 A (Note 2)
P-Ch
-0.8
-1.2
A
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t ) =
T J −TA
R θJA(t )
=
T J−TA
R θJC+RθCA(t )
= I 2D (t ) × RDS (ON )
TJ
Typical RθJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 130oC/W when mounted on a 0.125 in2 pad of 2oz cpper.
b. 140oC/W when mounted on a 0.005 in2 pad of 2oz cpper.
c. 180oC/W when mounted on a 0.0015 in2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDC7001C.SAM
Typical Electrical Characteristics: N-Channel
1.5
3
8.0 7.0
VGS = 3.5V
6.0
1.2
RDS(on) , NORMALIZED
5.5
5.0
0.9
4.5
0.6
4.0
3.5
0.3
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
V GS =10V
3.0
5.0
6.0
1.5
2
3
4
, DRAIN-SOURCE VOLTAGE (V)
8.0
10
1
0.3
0.6
0.9
I D , DRAIN CURRENT (A)
5
1.2
1.5
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
2
2.5
V GS = 10V
R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 0.51A
1.8
R DS(ON), NORMALIZED
7.0
0
1
VDS
DRAIN-SOURCE ON-RESISTANCE
5.5
0.5
Figure 1. N-Channel On-Region Characteristics.
V GS = 10V
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
2
TJ = 125°C
1.5
25°C
1
-55°C
0.5
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
0
150
0.3
I
Figure 3. N-Channel On-Resistance Variation with
Temperature.
D
0.6
0.9
, DRAIN CURRENT (A)
1.2
1.5
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
1.2
V DS = 10V
T
J
= -55°C
25°C
125°C
V th, NORMALIZED
1.2
0.9
0.6
0.3
0
1
2
3
4
5
6
V GS , GATE TO SOURCE VOLTAGE (V)
7
Figure 5. N-Channel Transfer Characteristics.
8
GATE-SOURCE THRESHOLD VOLTAGE
1.5
I D , DRAIN CURRENT (A)
4.5
2
0
0
4.0
2.5
V DS = V GS
I D = 250µA
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDC7001C.SAM
1.16
I
D
1.5
1
= 250µA
1.12
I S , REVERSE DRAIN CURRENT (A)
1.08
1.04
1
0.96
0.92
0.88
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
TJ = 125°C
-55°C
0.01
0.4
0.6
0.8
1
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
10
100
VDS = 25V
V GS , GATE-SOURCE VOLTAGE (V)
50
CAPACITANCE (pF)
25°C
0.1
0.001
0.2
150
V GS = 0V
0.5
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
C iss
20
C oss
10
C rss
5
f = 1 MHz
2
V GS = 0 V
1
0.1
8
I D = 0.51A
6
4
2
0
0.2
0.5
1
2
5
10
20
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. N-Channel Capacitance Characteristics.
0
0.2
0.4
0.6
0.8
Q g , GATE CHARGE (nC)
1
1.2
Figure 10. N-Channel Gate Charge Characteristics.
0.7
V DS = 10V
T
0.6
I D , DRAIN CURRENT (A)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics: N-Channel (continued)
0.5
J
= -55°C
25°C
0.4
125°C
0.3
0.2
0.1
0
0
0.3
V
GS
0.6
0.9
1.2
, GATE TO SOURCE VOLTAGE (V)
1.5
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDC7001C.SAM
Typical Electrical Characteristics: P-Channel (continued)
-1
3
-9.0 -8.0
-7.0
-0.8
R DS(ON) , NORMALIZED
-6.0
-0.6
-5.0
-0.4
-0.2
-4.0
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
V GS = -10V
VGS =-4.5V
2.5
-5.0
2
-6.0
-7.0
1.5
-8.0
-9.0
-10
1
-3.5
0.5
-0.2
0
-1
VDS
-6
I
-0.4
-0.6
, DRAIN CURRENT (A)
-0.8
-1
1.8
2.5
, NORMALIZED
1.4
1.2
DS(on)
1
0.8
0.6
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
DRAIN-SOURCE ON-RESISTANCE
V GS =-10 V
I D = -0.34A
VG S = -10V
0.4
-50
2
T J = 125°C
1.5
25°C
1
-55°C
0.5
150
-0.2
Figure 14. P-Channel On-Resistance Variation with
Temperature.
-0.4
-0.6
I D , DRAIN CURRENT (A)
-0.8
-1
Figure 15. P-Channel On-Resistance Variation with
Drain Current and Temperature.
1.1
V DS =- 10V
T = -55°C
J
25°C
125°C
V th, NORMALIZED
-0.8
-0.6
-0.4
-0.2
-1
-2
-3
V
GS
-4
-5
-6
-7
, GATE TO SOURCE VOLTAGE (V)
Figure 16. P-Channel Transfer Characteristics.
-8
GATE-SOURCE THRESHOLD VOLTAGE
-1
ID , DRAIN CURRENT (A)
D
Figure 13. P-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
R
R DS(ON) , NORMALIZED
-5
Figure 12. P-Channel On-Region Characteristics.
1.6
DRAIN-SOURCE ON-RESISTANCE
-2
-3
-4
, DRAIN-SOURCE VOLTAGE (V)
VDS = V GS
1.05
I D = -250µA
1
0.95
0.9
0.85
0.8
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 17. P-Channel Gate Threshold Variation
with Temperature.
NDC7001C.SAM
Typical Electrical Characteristics: P-Channel (continued)
1
0.5
-I S, REVERSE DRAIN CURRENT (A)
DRAIN-SOURCE BREAKDOWN VOLTAGE
I D = 250µA
1.1
1.05
1
0.95
0.9
-50
-25
0
T
J
25
50
75
100
, JUNCTION TEMPERATURE (°C)
125
0.1
VGS =0V
TJ = 125°C
25°C
-55°C
0.05
0.01
0.005
0.001
0.2
150
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
0.4
0.6
0.8
1
1.2
1.4
1.6
-V SD , BODY DIODE FORWARD VOLTAGE (V)
1.8
Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
-10
100
I D = -0.34A
CAPACITANCE (pF)
, GATE-SOURCE VOLTAGE (V)
Ciss
50
Coss
20
10
Crss
5
f = 1 MHz
-24
-48
-6
-4
-2
GS
V GS = 0 V
V DS = -12V
V
2
-8
1
0.1
0
0.2
0.5
-V
DS
1
2
5
10
20
50
, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. P-Channel Capacitance Characteristics.
0
0.2
0.4
0.6
0.8
1
Q g , GATE CHARGE (nC)
1.2
1.4
1.6
Figure 21. P-Channel Gate Charge Characteristics.
0.5
TJ = -55°C
25°C
0.3
125°C
0.2
0.1
FS
, TRANSCONDUCTANCE (SIEMENS)
V DS =- 10V
0.4
g
BV DSS , NORMALIZED
1.15
0
-0.2
-0.4
-0.6
-0.8
-1
I D , DRAIN CURRENT (A)
Figure 22. P-Channel Transconductance Variation with
Drain Current and Temperature.
NDC7001C.SAM
Typical Thermal Characteristics: N & P-Channel
0.55
I D , STEADY-STATE DRAIN CURRENT (A)
STEADY-STATE POWER DISSIPATION (W)
1.2
1.1
1a
1
0.9
1b
0.8
1c
4.5"x5" FR-4 Board
0.7
o
TA = 2 5 C
Still Air
0.6
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
1
1a
0.5
1b
0.45 1c
0.4
4.5"x5" FR-4 Board
o
TA = 2 5 C
Still Air
VG S = 1 0 V
0.35
0
Figure 23. SOT-6 Dual Package Maximum
Steady-State Power Dissipation versus Copper
Mounting Pad Area.
0.025
0.05
0.075
0.1
2
2oz COPPER MOUNTING PAD AREA (in )
Figure 24. N-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
3
0.4
2
1
0.35
1a
1b
0.3
1c
0.25
I D , DRAIN CURRENT (A)
-I D , STEADY-STATE DRAIN CURRENT (A)
0.125
RD
LIM
IT
10
0
1m us
s
10
0.2
10
0.1
V
0.05
GS
= 10V
SINGLE PULSE
0m
ms
s
1s
DC
R θJ A = See Note 1c
o
TA = 2 5 C
0.02
T A = 25°C
Still Air
VG S = - 1 0 V
0
N)
0.5
4.5"x5" FR-4 Board
0.2
S(O
0.01
0.025
0.05
0.075
0.1
2oz COPPER MOUNTING PAD AREA (in 2 )
0.125
Figure 25. P-Ch Maximum Steady-State
Drain Current versus Copper Mounting
Pad Area.
1
2
5
10
20
V DS , DRAIN-SOURCE VOLTAGE (V)
50
70
Figure 26. N-Channel Maximum Safe
Operating Area.
3
2
10
0u
-I D, DRAIN CURRENT (A)
1
0.5
RD
S(O
N)
LIM
1m
IT
10
0.2
10
0.1
V GS = -10V
0.05
SINGLE PULSE
0m
s
s
ms
s
1s
DC
R θJ A = See Note 1c
0.02
T A = 25°C
0.01
1
2
5
10
20
-V DS , DRAIN-SOURCE VOLTAGE (V)
50
70
Figure 27. P-Channel Maximum Safe
Operating Area.
NDC7001C.SAM
Typical Thermal Characteristics: N & P-Channel
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
0 .5
D = 0.5
0 .2
0.2
0 .1
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1c
θ
0.1
P(pk)
0.05
t1
0.05
0.02
0.01
0.02
= P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
A
Single Pulse
0.01
0 .0 0 0 1
t2
TJ - T
0 .001
0 .0 1
0 .1
t 1, TIME (sec)
1
10
100
300
Figure 28. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
ton
VDD
t d(on)
tf
90%
90%
V OUT
D
VGS
tr
RL
V IN
to f f
t d(off)
VO U T
10%
R GEN
10%
DUT
G
90%
V IN
S
50%
50%
10%
PULSE WIDTH
Figure 29. N or P-Channel Switching Test Circuit.
Figure 30. N or P-Channel Switching Waveforms.
NDC7001C.SAM
SuperSOTTM-6 Tape and Reel Data and Package Dimensions
SSOT-6 Packaging
Configuration: Figur e 1.0
Packaging Description:
Customize Label
SSOT-6 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Anti static Cover Tape
These full reels are individually barcode labeled and
placed inside a pizza box (illustrated in figure 1.0) made of
recyclable corrugated brown paper with a Fairchild logo
printing. One pizza box contains three reels maximum.
And these pizza boxes are placed inside a barcode
labeled shipping box which comes in different sizes
depending on the number of parts shipped.
F63TNR
Label
Embossed
Carrier Tape
631
631
631
631
631
SSOT-6 Packaging Information
Packaging Option
Standard
(no f l ow c ode )
Pin 1
D87Z
SSOT-6 Unit Orientation
Packaging type
TNR
TNR
Qty per Reel/Tube/Bag
3,000
10,000
Reel Size
7" Dia
13"
184x187x47
343x343x64
Max qty per Box
9,000
30,000
Weight per unit (gm)
0.0158
0.0158
Weight per Reel (kg)
0.1440
0.4700
Box Dimension (mm)
343mm x 342mm x 64mm
Intermediate box fo r D87Z Option
F63TNR Label
Note/Comments
F63TNR
Label
F63TNR Label sa mpl e
184mm x 187mm x 47mm
Pizza Box fo r Standar d Opti on
F63TNR
Label
LOT: CBVK741B019
QTY: 3000
FSID: FDC633N
SPEC:
D/C1: D9842
D/C2:
SSOT-6 Tape Leader and Trailer
Configuration: Figur e 2.0
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Carrier Tape
Cover Tape
1998 Fairchild Semiconductor Corporation
Comp onent s
Traile r Tape
300mm mi nimum or
75 empty poc kets
Lead er Tape
500mm mi nimum or
125 emp ty poc kets
August 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SSOT-6 Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
F
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
T
1.37
+/-0.10
0.255
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SSOT-6 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
7" Dia
7.00
177.8
8mm
13" Dia
13.00
330
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
July 1999, Rev. C
SuperSOTTM-6 Tape and Reel Data and Package Dimensions, continued
SuperSOT -6 (FS PKG Code 31, 33)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0158
1998 Fairchild Semiconductor Corporation
September 1998, Rev. A
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Advance Information
Formative or
In Design
This datasheet contains the design specifications for
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Rev. D