NJG1145UA2 WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJG1145UA2 is a fully matched wide band low noise amplifier GaAs MMIC for digital TV and BS/CS applications. This amplifier covers VHF, UHF, and L bands. To achieve wide dynamic range, the NJG1145UA2 offers high gain mode and low gain mode. Selecting high gain mode for weak signals, the NJG1145UA2 helps improve receiver sensitivity through high gain and low noise figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. In high gain mode, the NJG1145UA2 achieves high gain and high IIP3 across the band. The ESD protection circuits are integrated into the MMIC. They achieve high ESD protection voltage. An ultra-small and ultra-thin package of EPFFP6-A2 is adopted. FEATURES Wide operating frequency range Low voltage operation External components count Small package size [High gain mode] Current consumption High gain Low noise figure [Low gain mode] Low current consumption Gain(Low loss) PACKAGE OUTLINE NJG1145UA2 90MHz~2150MHz 2.8V typ. 3pcs. (capacitor: 2pcs, inductor: 1pc) EPFFP6-A2 (package size: 1.0mmx1.0mmx0.37mm typ.) 20mA typ. +15.0dB typ. 1.5dB typ. 11µA typ. -1.0dB typ. PIN CONFIGURATION (Top View) 5 RFIN GND VCTL 6 4 Pin Connection 1. GND 2. GND 3. RFOUT 4. VCTL 5. GND 6. RFIN Logic circuit Bypass circuit LNA circuit Bias circuit 1PIN INDEX 1 GND TRUTH TABLE 3 GND 2 RFOUT “H”=VCTL(H)“L”=VCTL(L) VCTL LNA ON Bypass LNA mode H ON OFF High Gain mode L OFF ON Low Gain mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2010-10-01 -1- NJG1145UA2 ABSOLUTE MAXIMUM RATINGS T a=+25°C, Zs=Zl=50 ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Supply voltage VDD 5.0 V Control voltage VCTL 5.0 V Input power PIN VDD=2.8V +15 dBm Power dissipation PD 4-layer FR4 PCB with through-hole (101.5x114.5mm), Tj=150°C 590 mW Operating temperature Topr -40~+85 °C Storage temperature Tstg -55~+150 °C ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS) General conditions: VDD=2.8V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS MIN TYP MAX UNITS VDD 2.3 2.8 3.6 V Control voltage (High) VCTL(H) 1.3 1.8 3.6 V Control voltage (Low) VCTL(L) 0.0 0.0 0.5 V Operating voltage SYMBOL CONDITIONS Operating current1 IDD1 RF OFF, VCTL=1.8V - 20.0 27.0 mA Operating current2 IDD2 RF OFF, VCTL=0V - 11.0 25.0 µA Control current ICTL RF OFF, VCTL=1.8V - 6.0 10.0 µA -2- NJG1145UA2 ELECTRICAL CHARACTERISTICS2 (High Gain mode) Conditions: freq=90~2150MHz, VDD=2.8V, VCTL=1.8V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS SYMBOL Small signal gain1 MIN TYP MAX UNITS Gain1 Exclude PCB, connector losses*1 12.0 15.0 18.0 dB NF1 Exclude PCB, connector losses*2 - 1.5 2.3 dB -5.0 +0.0 - dBm Noise figure1 Input power 1dB gain compression1 CONDITIONS P-1dB(IN)1 Input 3rd order intercept point1 IIP3_1 f1=freq, f2=freq+100kHz, PIN=-26dBm +2.0 +10.0 - dBm 2nd order IMD1 IM2_1 f1=200MHz, f2=500MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 20.0 28.0 - dB 3rd order IMD1 IM3_1 f1=600MHz, f2=650MHz, fmeas=700MHz, PIN1=P IN2=-15dBm *3 35.0 45.0 - dB - -19.0 -15.0 dB Isolation ISL S12 RF IN VSWR1 VSWRi1 - 2.2 3.2 - RF OUT VSWR1 VSWRo1 - 1.5 2.2 - *1 Input & output PCB and connector losses: 0.037dB(90MHz), 0.092dB(620MHz), 0.274dB(2150MHz) *2 Input PCB and connector losses: 0.019dB(90MHz), 0.046dB(620MHz), 0.122dB(2150MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 IM3 700 600/650 700 frequency(MHz) frequency(MHz) 200 500 -3- NJG1145UA2 ELECTRICAL CHARACTERISTICS3 (Low Gain mode) Conditions: freq=90~2150MHz, VDD=2.8V, VCTL=0V, T a=+25°C, Zs=Zl=50 ohm PARAMETERS SYMBOL Small signal gain2 Gain2 Input power at 1dB gain compression2 P-1dB(IN)2 CONDITIONS Exclude PCB, connector losses*1 f1=freq, f2=freq+100kHz, PIN=-6dBm MIN TYP MAX UNITS -6.0 -1.0 - dB +10.0 +15.0 - dBm +20.0 +30.0 - dBm 55.0 66.0 - dB 65.0 75.0 - dB Input 3rd order intercept point2 IIP3_2 2nd order IMD2 IMD2_2 3rd order IMD2 IMD3_2 RF IN VSWR2 VSWRi2 - 1.5 4.0 - RF OUT VSWR2 VSWRo2 - 1.5 4.0 - f1=200MHz, f2=500MHz fmeas=700MHz, PIN1=P IN2=-8dBm *3 f1=600MHz, f2=650MHz fmeas=700MHz, PIN1=P IN2=-8dBm *3 *1 Input & output PCB and connector losses: 0.037dB(90MHz), 0.092dB(620MHz), 0.274dB(2150MHz) *3 Definitions of IM2 and IM3. Pout(dBm) Pout(dBm) IM2 700 600/650 700 frequency(MHz) frequency(MHz) 200 -4- IM3 500 NJG1145UA2 TERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 2 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 3 RFOUT RF output terminal. This terminal doubles as the drain terminal of the LNA. Please connect this terminal to the power supply(VDD) via inductor(L1). 4 VCTL Control voltage terminal. 5 GND Ground terminal. This terminal should be connected to the ground plane as close as possible for excellent RF performance. 6 RFIN RF input terminal. This IC integrates an input DC blocking capacitor. -5- NJG1145UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Ta=25°C, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) 15 (f=620MHz) 20 40 10 35 Gain -10 25 IDD 10 15 -15 10 5 -25 -35 -30 -25 -20 -15 -10 -5 0 -40 0 0 -35 -30 -25 -20 -15 -10 -5 Pin (dBm) Pin (dBm) Pout, IM3 vs. Pin Gain, NF vs. frequency (f1=620MHz, f2=f1+100kHz) 40 5 P-1dB(IN)=-4.0dBm P-1dB(IN)=-4.0dBm -30 -40 0 (f=50~2500MHz) 16 4.0 15 20 3.5 Gain (dB) Pout 0 -20 -40 IM3 14 3.0 13 2.5 12 2.0 11 1.5 NF -60 10 9 IIP3=+7.1dBm -100 -30 1.0 0.5 (Exclude PCB, Connector Losses) 8 -25 -20 -15 -10 -5 0 5 10 0 500 Pin (dBm) 2000 0.0 2500 OIP3, IIP3 vs. frequency (f=50~2150MHz) (f1=50~2150MHz, f2=f1+100kHz, Pin=-26dBm) 30 25 OIP3, IIP3 (dBm) 0 -5 1500 frequency (MHz) P-1dB(IN) vs. frequency 5 1000 P-1dB(IN) -10 OIP3 20 15 IIP3 10 5 -15 0 0 500 1000 1500 frequency (MHz) -6- 2000 2500 0 500 1000 1500 frequency (MHz) 2000 2500 NF (dB) Gain -80 P-1dB(IN) (dBm) 20 IDD (mA) -5 -20 Pout, IM3 (dBm) 30 15 Pout 0 Gain (dB) Pout (dBm) 5 NJG1145UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit P-1dB(IN) vs. VDD Gain, NF vs. VDD (f=620MHz) 16 Gain 3.0 2.5 13 12 2.0 NF 11 1.5 10 1.0 NF (dB) 14 P-1dB(IN) (dBm) 3.5 15 Gain (dB) (f=620MHz) 5 4.0 0 P-1dB(IN) -5 -10 0.5 9 (Exclude PCB, Connector Losses) 8 1.5 2.0 2.5 3.0 3.5 4.0 -15 1.5 0.0 4.5 2.0 2.5 3.0 OIP3, IIP3 vs. VDD 30 3.5 4.0 4.5 VDD (V) VDD (V) IM2 vs. VDD (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 40 25 (f1=200MHz, f2=500MHz, Pin=-15dBm) 35 20 30 IM2 (dB) OIP3, IIP3 (dBm) OIP3 15 10 20 IIP3 5 0 1.5 IM2 25 15 2.0 2.5 3.0 3.5 4.0 10 1.5 4.5 2.0 2.5 3.0 VDD (V) IM3 vs. VDD 60 3.5 4.0 4.5 4.0 4.5 VDD (V) VSWR vs. VDD (f1=600MHz, f2=650MHz, Pin=-15dBm) (f=620MHz) 3.0 55 VSWRi 2.5 VSWR IM3 (dB) 50 45 IM3 2.0 40 VSWRo 1.5 35 30 1.5 2.0 2.5 3.0 VDD (V) 3.5 4.0 4.5 1.0 1.5 2.0 2.5 3.0 3.5 VDD (V) -7- NJG1145UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD ISL vs. VDD (f=620MHz) -5 25 -10 20 -15 ISL 15 10 -25 5 2.0 2.5 3.0 VDD (V) -8- IDD -20 -30 1.5 (RF OFF) 30 IDD (mA) ISL (dB) 0 3.5 4.0 4.5 0 1.5 2.0 2.5 3.0 VDD (V) 3.5 4.0 4.5 NJG1145UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit Gain, NF vs. Temperature 4.0 (f=620MHz) 10 14 3.0 13 2.5 2.0 12 NF 11 1.5 10 1.0 P-1dB(IN) (dBm) 3.5 Gain NF (dB) 15 Gain (dB) P-1dB(IN) vs. Temperature (f=620MHz) 16 5 0 -5 0.5 9 (Exclude PCB, Connector Losses) 8 -40 -20 0 20 40 60 0.0 100 80 -10 -40 -20 0 o 100 (f1=200MHz, f2=500MHz, Pin=-15dBm) 30 10 IIP3 IM2 25 20 5 15 -20 0 20 40 60 80 10 -40 100 -20 o 0 20 40 60 80 100 80 100 o Temperature ( C) Temperature ( C) VSWR vs. Temperature IM3 vs. Temperature 60 80 35 OIP3 IM2 (dB) OIP3, IIP3 (dBm) 40 15 0 -40 60 IM2 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-26dBm) 20 40 Temperature ( C) OIP3, IIP3 vs. Temperature 25 20 o Temperature ( C) (f1=600MHz, f2=650MHz, Pin=-15dBm) (f=620MHz) 3.0 55 2.5 VSWRi VSWR IM3 (dB) 50 IM3 45 2.0 40 VSWRo 1.5 35 30 -40 -20 0 20 40 60 o Temperature ( C) 80 100 1.0 -40 -20 0 20 40 60 o Temperature ( C) -9- NJG1145UA2 ELECTRICAL CHARACTERISTICS (High Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, Zs=Zl=50 ohm, with application circuit IDD, ICTL vs. Temperature ISL vs. Temperature (f=620MHz) 0 (RF OFF) 20 -5 25 20 18 IDD -15 ISL 16 15 14 10 -20 ICTL -30 -40 -20 0 20 40 60 80 100 K factor vs. frequency (f=50MHz~20GHz) o +25 C o +60 C 0 C +85 C -40 C -20 C o K factor 15 o o o 10 5 0 0 5 10 frequency (GHz) -20 0 20 40 60 Temperature ( C) Temperature ( C) 20 10 -40 o o - 10 - 5 12 -25 15 20 80 0 100 ICTL (µ µ A) IDD (mA) ISL (dB) -10 NJG1145UA2 ELECTRICAL CHARACTERISTICS (Hgih Gain mode) Conditions: VDD=2.8V, VCTL=1.8V, T a=25oC, Zs=Zl=50 ohm, with application circuit - 11 - NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit Pout vs. Pin Gain, IDD vs. Pin (f=620MHz) 20 (f=620MHz) 0 10 Pout 0 Gain (dB) Pout (dBm) 10 -10 -1 8 -2 6 -3 4 IDD -20 -4 2 P-1dB(IN)=+16.0dBm P-1dB(IN)=+16.0dBm -30 -20 -15 -10 -5 0 5 10 15 -5 -20 20 0 -15 -10 -5 Pin (dBm) 5 10 15 20 Pin (dBm) Gain vs. frequency Pout, IM3 vs. Pin (f1=620MHz, f2=f1+100kHz) 40 0 (f=50~2500MHz) 0 20 Gain -2 Pout Gain (dB) Pout, IM3 (dBm) 0 -20 -40 -4 -6 -60 -8 IM3 -80 IIP3=+30.3dBm -100 -20 (Exclude PCB, Connector Losses) -10 -10 0 10 20 30 40 0 500 Pin (dBm) 1000 1500 2000 P-1dB(IN) vs. frequency OIP3, IIP3 vs. frequency (f=50~2150MHz) (f1=90~2150MHz, f2=f1+100kHz, Pin=-6dBm) 25 2500 frequency (MHz) 34 OIP3, IIP3 (dBm) P-1dB(IN) (dBm) 32 20 P-1dB(IN) 15 10 IIP3 30 28 OIP3 26 24 5 22 0 500 1000 1500 frequency (MHz) - 12 - 2000 2500 0 500 1000 1500 frequency (MHz) 2000 2500 IDD (mA) Gain NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit Gain vs. VDD -1 (f=620MHz) 20 Gain P-1dB(IN) (dBm) Gain (dB) P-1dB(IN) vs. VDD (f=620MHz) 0 -2 -3 P-1dB(IN) 15 10 5 -4 -5 1.5 2.0 2.5 3.0 3.5 4.0 0 1.5 4.5 2.0 2.5 VDD (V) 3.5 4.0 OIP3, IIP3 vs. VDD IM2 vs. VDD (f1=620MHz, f2=f1+100kHz, Pin=-6dBm) (f1=200MHz, f2=500MHz, Pin=-8dBm) 85 4.5 IIP3 80 OIP3 75 30 IM2 (dBm) OIP3, IIP3 (dBm) 35 3.0 VDD (V) 25 70 IM2 65 20 60 15 1.5 2.0 2.5 3.0 3.5 4.0 55 1.5 4.5 2.0 2.5 VDD (V) 3.5 4.0 4.5 4.0 4.5 VSWR vs. VDD IM3 vs. VDD 95 3.0 VDD (V) (f1=600MHz, f2=650MHz, Pin=-8dBm) (f=620MHz) 2.0 90 1.8 80 VSWR IM3 (dBm) VSWRi 85 IM3 1.6 VSWRo 1.4 75 1.2 70 65 1.5 2.0 2.5 3.0 VDD (V) 3.5 4.0 4.5 1.0 1.5 2.0 2.5 3.0 3.5 VDD (V) - 13 - NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD (RF OFF) 30 25 IDD (µ µ A) 20 IDD 15 10 5 0 1.5 2.0 2.5 3.0 VDD (V) - 14 - 3.5 4.0 4.5 NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit Gain vs. Temperature (f=620MHz) 25 Gain P-1dB(IN) (dBm) -1 Gain (dB) P-1dB(IN) vs. Temperature (f=620MHz) 0 -2 -3 20 P-1dB(IN) 15 10 -4 -5 -40 -20 0 20 40 60 80 5 -40 100 -20 0 o 40 60 80 100 80 100 80 100 Temperature ( C) OIP3, IIP3 vs. Temperature IM2 vs. Temperature (f1=620MHz, f2=f1+100kHz, Pin=-6dBm) (f1=200MHz, f2=500MHz, Pin=-8dBm) 80 IIP3 75 OIP3 70 30 IM2 (dBm) OIP3, IIP3 (dBm) 35 20 o Temperature ( C) 25 IM2 65 60 20 55 15 -40 -20 0 20 40 60 80 50 -40 100 -20 0 40 60 Temperature ( C) VSWR vs. Temperature IM3 vs. Temperature 95 20 o o Temperature ( C) (f1=600MHz, f2=650MHz,Pin=-8dBm) (f=620MHz) 2.0 90 1.8 80 VSWR IM3 (dBm) VSWRo 85 IM3 1.6 VSWRi 1.4 75 1.2 70 65 -40 -20 0 20 40 60 o Temperature ( C) 80 100 1.0 -40 -20 0 20 40 60 o Temperature ( C) - 15 - NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, Zs=Zl=50 ohm, with application circuit IDD vs. Temperature K factor vs. frequency (RF OFF) 25 (f=50MHz~20GHz) 20 o +25 C o +60 C o 0 C +85 C -40 C 20 o 15 15 K factor IDD (µ µ A) o -20 C IDD 10 o 10 5 5 0 -40 0 -20 0 20 40 60 80 100 o Temperature ( C) (RF OFF) IDD (mA) 20 15 10 o +25 C o +60 C 0 C +85 C -40 C 5 -20 C o 0 0.0 0.5 1.0 1.5 VCTL (V) - 16 - 2.0 5 10 frequency (GHz) IDD vs. VCTL 25 0 o o o 2.5 3.0 15 20 NJG1145UA2 ELECTRICAL CHARACTERISTICS (Low Gain mode) Conditions: VDD=2.8V, VCTL=0V, T a=25oC, Zs=Zl=50 ohm, with application circuit - 17 - NJG1145UA2 APPLICATION CIRCUIT (Top View) 5 RFIN RF IN GND VCTL 6 VCTL 4 Logic circuit Bypass circuit LNA circuit Bias circuit 1PIN INDEX 1 330pF C1 RF OUT 3 GND GND 2 RFOUT 270nH L1 VDD 1000pF C2 TEST PCB LAYOUT (Top View) PARTS LIST VCTL Parts ID. L1 C1, C2 C1 RF IN Manufacturer TAIYO-YUDEN HK1005 Series MURATA GRM03 Series RF OUT L1 1pin Index C2 VDD PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.40mm (Z0=50 ohm) PCB SIZE=14.0mm x 14.0mm PRECAUTIONS C1 is a coupling and DC blocking capacitor at the output, and C2 is a bypass capacitor. L1 is an RF choke. (DC feed inductor) In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC. All external parts are placed as close as possible to the IC. - 18 - NJG1145UA2 MEASUREMENT BLOCK DIAGRAM Measuring instruments NF Analyzer : Agilent 8973A Noise Source : Agilent 346A Setting the NF analyzer Measurement mode form Device under test : Amplifier System downconverter : off Mode setup form Sideband : LSB Averages : 16 Average mode : Point Bandwidth : 4MHz Loss comp : off Tcold : setting the temperature of noise source (300.0K) NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and NF analyzer Input (50Ω) Noise Source Drive Output are connected directly. Calibration Setup NF Analyzer (Agilent 8973A) Noise Source (Agilent 346A) * Noise source and DUT, DUT and In DUT out Input (50Ω) Noise Source Drive Output NF analyzer are connected directly. Measurement Setup - 19 - NJG1145UA2 PACKAGE OUTLINE (EPFFP6-A2) Unit Substrate Terminal Treat Molding Material Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 20 - :mm :FR-4 :Au :Epoxy Resin :0.855mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.