NJG1302V MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1302V is a GaAs MMIC designed mainly for the final stage power amplifier of Japanese PHS handset, but suitable digital wireless phone and wireless LAN. This amplifier has wide variable gain capability of 20dB dynamic range. NJG1302V has input and output matching circuits internally and features low voltage and high efficiency operation. The output power of 21dBm is easily available with very low distortion. nFEATURES lVoltage gain under low distortion lLow voltage operation lLow current consumption lHigh gain lLow distortion(ACP) lReduction of Parasitic oscillation lInput and output internal matching circuit lPackage nPACKAGE OUTLINE NJG1302V +3.0V typ. 195mA typ. @f= 1.9GHz, Pout= 21dBm 32dB -60dBc typ. @f= 1.9GHz, POUT= 21dBm SSOP14 nPIN CONFIGURATION V Type (Top View) 1 14 2 13 3 12 4 11 5 10 6 9 7 8 Pin Connection 1. RFIN 8. RFOUT 2. GND 9. GND 3. VGG1 10. V DD1 4. GND 11. GND 5. VCONT 12. V DD1 6. GND 13. GND 7. VGG2 14. GND -1- NJG1302V nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Gain Control Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1,VDD2 VGG1,VGG2 VCONT Pin PD Topr Tstg (Ta=+25oC, Zs=Zl=50Ω) RATINGS UNITS 6 V -4 V -4 V 3 dBm 600 mW -30 ~ +85 °C -40 ~ +150 °C CONDITIONS VGG1,VGG2 =-0.9V VDD1,VDD2=-3.0V VDD1,VDD2=-3.0V VDD1,VDD2=-3.0V, VGG1,VGG2 =-0.9V At on PCB board nELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITONS Operating Frequency freq VDD1,2=3.0V Drain Voltage VDD1,2 Gate Voltage VGG1,2 VDD1,2=3.0V, Iidle=180mA Idle Current *1 Iidle VDD1,2=3.0V, No RF Signal Operating Current *1 IDD VDD1,2=3.0V, Pout=21dBm Gate Current *2 IGG VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Pout=21dBm Gain Control Terminal ICONT Current -2.0<VCONT<0.0V Gain Control Voltage VCONT Small Signal Gain Gain VDD1,2=3.0V, Iidle=180mA Gain Flatness Gflat VDD1,2=3.0V, Iidle=180mA VCONT =-2~0V, VDD1,2=3.0V Gain Control Range GCONT Iidle=180mA Pout at 1dB P-1dB VDD1,2=3.0V Compression point VDD1,2=3.0V, Pout=21dBm Adjacent Channel offset=600kHz, Pacp1 Leakage Power 1 Pin;π/4 DQPSK VDD1,2=3.0V, Pout=21dBm Adjacent Channel offset=900kHz, Pacp2 Leakage Power 2 Pin; π/4 DQPSK Harmonics PSP VDD1,2=3.0V, Pout=21dBm Input VSWR VSWRi VDD1,2=3.0V Load VSWR Tolerance - VDD1,2=3.0V, Pout=21dBm Load VSWR=4:1,All Phase *1:VDD1 Terminal VDD2 Terminal Total Current *2:VGG1 Terminal VGG2 Terminal Total Current -2- MIN 1.89 2.9 -1.25 175 180 -150 (Ta=+25 oC, Zs=Zl=50Ω) TYP MAX UNITS 1.92 GHz 3.0 5.0 V -0.9 -0.6 V 180 185 mA 195 205 mA -70 uA -5 -2 - uA -2.0 29 0 32 0.5 0 35 1.0 V dB dB 18 20 23 dB 22 23 - dBm - -60 -55 dBc - -65 -60 dBc -35 -30 dBc 2.2 Parasitic Oscillation for Fundamental Signal Level :<-60dBc = NJG1302V nTYPICAL CHARACTERISTICS Pacp vs. Operating Current vs. VDD Gain vs. Frequency vs. Control Voltage o (P (VDD=3.0V, DD I =180mA, Ta=25 C) =21dBm, V out =0V, f=1.9GHz, T =25 oC) cont a -50 40 V 30 =0V CONT Pacp(dBc) (d Bc) 20 -1.0V V acp DD =2.9V -60 3.0V P 10 3.3V -1.4V -65 5.0V 0 4.0V -70 1.0 2.0 3.0 150 160 170 Frequency f (GHz) 180 190 Operating Current I DD 200 210 (mA) Output Power vs. Input Power vs. Control Voltage (V =3.0V, I DD o idle =180mA, f=1.9GHz, T =25 C) a 26 V -1V -1.2V 22 20 -1.4V 18 16 14 12 -20 -15 -10 -5 0 Input Power P (dBm) 5 10 in P acp vs. Input Power vs. Control Voltage (V DD =3.0V, I o idle =180mA, f=1.9GHz, T =25 C) a -20 -30 VCONT=0V -40 acp (dBc) -1V P (dBm) =0V CONT 24 out -10 0.0 Output Power P Gain (dB) -55 -50 -1.4V -60 -70 -1.2V -80 -90 -20 -15 -10 -5 0 5 Input Power Pin (dBm) -3- 10 NJG1302V nTYPICAL CHARACTERISTICS Gain, P acp (V DD =3.0V, V cont vs. Ambient Temperature =0V, I idle =180mA, P out =21dBm, f=1.9GHz) -55 34 Gain (dB) Gain -60 P acp 32 (dBc) 33 31 P acp -65 30 -40 -20 0 20 40 60 80 o Ambient Temperature T ( C) a o =180mA, f=1.9GHz, P =-11dBm, T =25 C) in a 200 -40 DD acp -60 150 P acp -80 100 -2 -1.5 -1 -0.5 Control Voltage V CONT 0 0.5 (V DD cont =0V, I out =21dBm, f=1.9GHz) 185 180 175 170 -40 -20 0 20 40 60 80 o Ambient Temperature T ( C) a Gain, Operating Current vs. V (V o =3.0V, I =180mA, T =25 C) DD =180mA, P idle (V) Gain vs PHS Band Frequency vs. Control Voltage 50 DD cont =0V, I =180mA@V idle =3.6V, P DD =21dBm, f=1.9GHz, T =25 C) a 240 33 a I 40 V DD o out DD 32 220 31 200 30 180 =0V 30 DD Gain (dB) Gain (dB) CONT 20 -1.0V 10 -1.4V Gain 0 1.89 1.9 1.91 Frequency f (GHz) 1.92 29 2.5 160 3 3.5 4 Drain Voltage V -4- (mA) I (V =3.0V, V 190 (dBc) -20 Operating Current vs. Ambient Temperature 4.5 DD (V) 5 Operatin Current I idle 250 P DD Operating Current I (mA) DD vs. Control Voltage DD (V =3.0V, I acp Operating Current I (mA) Operating Current, P NJG1302V nTYPICAL CHARACTERISTICS idle Total Current (mA) (dBm) 250 Total Current @I =80mA idle 20mA 200 60mA 150 10 40mA 100 5 20mA -15 -10 -5 a 0 5 100 20 80 40mA 20mA 15 60 P.A.E. @I =80mA idle 10 40 60mA 40mA 5 20 20mA 0 0 -20 =0V, f=1.9GHz, T =25 C ) 50 0 -25 o CONT Output Power @I =80mA idle 60mA 300 40mA out 25 60mA 15 =3V, V DD2,3 350 Output Power @I =80mA 20 Output Power P (V a (dBm) CONT 25 Output Power, P.A.E. vs. Input Power o =0V, f=1.9GHz, T =25 C) out DD2,3 =3V, V Output Power P (V 0 -25 10 -20 -15 -10 -5 0 5 10 Input Power P (dBm) Input Power P (dBm) in in |S | , |S | vs. Frequency 11 22 (V =3.0V, I =180mA, V DD DD o cont =0V, T =25 C) a 20 0 |S | 22 11 22 |S | , |S | (dB) 10 -10 |S | 11 -20 -30 0 1 2 3 Frequency f (GHz) W All adjacent channel leakage power used in these evaluations are those of 600kHz offset from fundamental wave at PHS operating condition(π/4QPSK moduration) -5- Power Added Efficiency (%) Output Power,Total Current vs. Input Power NJG1302V nRECOMMENDED CIRCUIT RFin GND 14 GND GND 13 VGG1 VDD1 GND GND Vcont VDD2 1 RFin 2 VGG 12 3 (-0.5~-1.2V) IDD=0 @VGG <-2V = C2 C1 4 Vcont 5 C1 (0~-2V) 6 C2 C1 C2 C1 11 10 GND GND VGG2 RFout 7 C3 VDD (3.0~5.0V) L1 C2 C1 C3 9 RFout 8 C1: 1000pF C2: 33pF C3: 1uF L1: 4.7nH nRECOMMENDED PCB DESIGN PCB : FR4 t=0.2mm CAPACITOR MURATA GRM39 Series 1uF 1uF INDUCTOR TAIYO-YUDEN HK1608 Series 4.7uF The reflow method is recommended for this device to attach on PCB -6- NJG1302V nAPPLICATION CIRCUIT (NEGATIVE VOLTAGE GENERATOR) +3.0V -3.0V 8 7 6 10uF + 5 NJU7660 1 2 3 10kΩTrimmer Resistance (7kΩ) VGG (-0.9V Typ.) 4 (3kΩ) + - 10uF +V 1MΩ VCONT 1MΩ 2 (0~+2V) 7 NJU7001 3 6 Vcont (0~-2V) out 4 500kΩ -V -7- NJG1302V nPACKAGE OUTLINE (SSOP14) Lead material Lead surface finish Molding material UNIT Weight Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -8- : Copper : Solder plating : Epoxy resin : mm :66mg [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.