== an AMP company z I RF M’OSFET 2 - 175 MHz Power Transistor, 4OW,28V DU2840S Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Parameter 1 Symbol Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature 1 ( Rating Units V DS 65 V V GS 20 V ‘0s 8 1 1 * 1 PD 125 W A T, 200 “C B StorageTemperature T STG -55 to +150 “C Thermal Resistance 8 JC 1.4 “CiW Breakdown Voltage 9.47 &22 6.48 .245 255 5.79 ,222 E28 G 292 3.30 .115 .I30 ) Symbol ) BV,,, 1 Min 1 Max 1 1 55 - ( Units ) ) V ) V,,=O.OV, l,,=lO.OmA mA V,,=28.0 V, V,,=O.O V Test Conditions I ‘DSS Gate-Source Leakage Current ’05s 2.0 pA v,,=20.0 v, v,,=o.o 2.0 6.0 V V,,=lO.O V, 1,,=200.0 mA 1 - S V,,=lO.O V, 1,,=2000.0 Gate Threshold Voltage I V GSrnHI v ForwardTransconductance GM Input Capacitance C 15s 90 pF V,=28.0 V, F=l .O MHz Output Capacitance C 055 80 pF V,,=28.0 V. F=l .O MHz C E1c.s -- 16 pF V,,=28.0 V, F=l .O MHz Reverse Capacitance I 1 Specifications ,393 564 2.0 Load MismatchTolerance -373 9.73 E Leakage Current Drain Efficiency .980 F Drain-Source Power Gain .970 at 25°C Parameter Drain-Source I~~~ 24.09 i 18.29 t 18.54 1 ,720 1 ,730 D m- Electrical Characteristics 24.64 mA, AVo,=l .O V, 80 us Pulse G, 13 - 1 dB 1 V,,=28.0 V, I,,=200 mA, P,,,-40.0 _. W, F=l75 MHz ‘1D 60 - % V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz VSWR-T - 3O:l - V,,=28.0 V, I,,=200 mA, P,,=40.0 W, F=175 MHz I Subject to Change Without Notice. M/A-COM, North America: Tel. Fax (800) (800) 366-2266 618-8883 = Asia/Pacific: Tel. Fax +81 (03) 3226-1671 ~81 (03) 3226-1451 = Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 DU2840S RF MOSFET Power Transistor, 4OW, 28V V2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY V,,=28 V I,,=200 mA Po,p40 301 10 EFFICIENCY V,,=28 W vs FREQUENCY V I,,=200 mA P,,,=40 W 1 ,0 25 50 100 FREQUENCY 150 0 180 60 50 loo FREOUENCY POWER OUTPUT vs POWER INPUT V,,=28 25 (MHz) POWER OUTPUT V IDO= 00 mA F=l75 0.3 0.5 POWER INPUT (W) vs SUPPLY MHz I,,=200 150 175 (MHz) VOLTAGE mA P,,=l .O W 29 SUPPLY VOLTAGE (V) Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) Fax (800) 366-2266 618-8883 s Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451 n Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 4OW, 28V Typical Device Impedance I Frequency (MHz) Z,, (OHMS) ZLoAD (OHMS) 30 12.0-j6.8 6.5 -j 1.5 50 10.0 - i 6.5 6.0 - i 1.8 100 1 6.0 - i 5.5 200 1.1 1 5.5-il.8 - j 3.0 3.5 - j 1.8 V,,=28 V, I,,=200 mA, P,,,=40 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the series equivalent load impedance as measured from drain to ground. RF Test Fixture VGS VDS J3 J4 ) VDS = 28 VOLTS I IDQ = 200mA 1 AT c9 L3 Rl RF OUT RF IN Jl Ql Ll Cl IY Al L2 1. b I - c7 C6 ‘I C8 IY Al J2 - I PARTS LIST Cl ,C?,C8 TRIMMER CAPACITOR 4-4OpF CAPACITOR 9-18OpF c2 TRIMMER C3,C6 CAPACITOR C-4$5 FEEDTHROUGH CAPACITOR 0.004uF c9 ELECTROLYTIC CAPACITOR 5OuF 50 VOLT 5OpF Ll NO. 12 AWG COPPER WIRE X 1.25” l2 NO. 12 AWG COPPER WIRE X 1.50” L3 8 TURNS OF NO. 22 AWG ENAMEL WIRE ON ‘0.25”. CLOSE WOUND Rl RESISTOR 01 DU2840S BOARD FR4 0.062 1 OOK OHMS Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 H Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020