MA-COM DU2880

an AMP comoanv
RF MOSFET Power Transistor, 8OW, 28V
2 - 175 MHz
DU2880T
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
Thermal Resistance
Electrical Characteristics
at 25°C
1 Symbol
I Parameter
Drain-Source
Breakdown
Voltage
BVDSS
1 Min
Test Conditions
1 Max ( Units 1
65
-
V
V,,=O.O V, 1,,=20.0 mA
Drain-Source
Leakage Current
‘DSS
4.0
mA
V,,=28.0
V, V,,=O.O V
Gate-Source
LeakageCurrent
‘GSS
4.0
pA
v,,=20.0
v, v,,=o.o
6.0
V
V&O.0
V, 1,,=400.0 mA
-
S
v,,=lo.o
V, 1,,=4.0 A, AV,,=l
Gate Threshold Voltage
V GSITHI
2.0
v
ForwardTransconductance
GM
InputCapacitance
C ISS
180
pF
V,,=28.0
V, F=l .O MHz
Output Capacitance
C ass
160
pF
V,,=28.0
V, F=l .O MHz
Reverse Capacitance
%s
-
32
PF
V,,=28.0
V, F=l .O MHz
2.0
.O V, 80 us Pulse
Power Gain
GP
13
-
dB
V,,=28.0
V, I,,=400
mA, P,,=80.0
W, F=175 MHz
Drain Efficiency
%
60
-
%
V,,=28.0
V. I,,=400
mA, P,,=80.0
W, F=175 MHz
VSWR-T
-
3O:l
-
V,,=28.0
V, I,,=400
mA, P,,,r=80.0 W, F=175 MHz
Load Mismatch Tolerance
Specifications Subject to Change Without Notice.
M/A-COM,
North America:
Tel. (BOO) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
DU2880T
RF MOSFET Power Transistor, 8OW, 28V
v2.00
Typical Broadband Performance
EFFICIENCY
V,,=28
Curves
GAIN vs FREQUENCY
vs FREQUENCY
V I,,=400
V,,=28
mA PO,,=80 W
V I,,=400
mA P,,,=80
W
25 I
10
50s
25
100
50
FREQUENCY
25
175
150
V I,,=400
POWER OUTPUT
I,,=400
mA
120 r
150
175
(MHz)
vs SUPPLY
VOLTAGE
mA F=175 MHz P,,=3.0 W
120
I
loo -
100
s
5
100
FREQUENCY
POWER OUTPUT vs POWER INPUT
V,,=28
50
(MHz)
5
80
80.
e
f$
60
B
40
3
2
20
0
1
0.1
0.2
0.3
1
2
3
4
5
I
13
15
20
25
SUPPLY VOLTAGE
POWER INPUT(W)
30
33
(V)
Specifications Subject !o Change Without Notrce.
M/A-COM,
Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
D
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
DU2880T
8OW, 28V
v2.00
Typical Device Impedance
Frequency (MHz)
Z,, (OHMS)
Z LOAD
(OHMS)
30
5.4 - j 4.4
5.7 + j 4.7
50
2.5 - j 4.4
3.4 + j 3.5
100
l.S-j3.4
2.4 + j 2.4
175
0.7 - j 1.2
1.7 + j 0.8
V,,=28 V, I,,=400 mA, P,,,.=80 Watts
Z,, is the se+
equivalent input impedance of the device from gate to source.
Z LOAD
is the optimum series equivalent load impedance as measured from drain to ground.
RF Test Fixture
VGS
VDS
J3
J4
R2
1
Cl2
VDS = 2s VOLTS
IW=4oomA
35.
-
IC”
L4
-!
RF OUT
RF IN
Jl
Cl
PARTS LIST
Cl ,c3
TRIMMER
c2.c9,c10
CAPACITOR
[email protected]
CGl
CAPACITOR
10oD~F
1
CAPACITOR
C5
MONOLITHIC
c&c9
TRIMMER
CIRCUIT
CAPACITOR
C7
CAPACITOR
Cl2
ELECTROLYTIC
Ll
NO. 12 AWG COPPER
4-4opF
CAPACITOR
0.01 UF
S-~BOPF
15pF
CAPACITOR
5&F
50 VOLT
WIRE X 1.18’ (LOOP 0.5’)
L2
NO, 12 AWG COPPER WIRE X 1’ (LOOP 0.4’)
W.L4
8 TURNS
OF NO. 18 AWG ENAMEL WIRE ON
Y).25-. CLOSE WOUND
Specifications
Subject
to Change
Rl
RESISTOR
300 OHMS 0.5 WATT
I%?
RESISTOR
27K OHMS 0.25 WAlT
Cl
DU2BBOT
BOARD
FR4 o.os2
Without
Notice.
WA-COM, Inc.
North America: Tel. (800) 366-2266
Fax (800) 618-8883
m
Asia/Pacific:
Tel. +81 (03)3226-1671
Fax +81 (03)3226-1451
n
Europe:
Tel. +44 (1344)869 595
Fax +44(1344)300 020