an AMP comoanv RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C Thermal Resistance Electrical Characteristics at 25°C 1 Symbol I Parameter Drain-Source Breakdown Voltage BVDSS 1 Min Test Conditions 1 Max ( Units 1 65 - V V,,=O.O V, 1,,=20.0 mA Drain-Source Leakage Current ‘DSS 4.0 mA V,,=28.0 V, V,,=O.O V Gate-Source LeakageCurrent ‘GSS 4.0 pA v,,=20.0 v, v,,=o.o 6.0 V V&O.0 V, 1,,=400.0 mA - S v,,=lo.o V, 1,,=4.0 A, AV,,=l Gate Threshold Voltage V GSITHI 2.0 v ForwardTransconductance GM InputCapacitance C ISS 180 pF V,,=28.0 V, F=l .O MHz Output Capacitance C ass 160 pF V,,=28.0 V, F=l .O MHz Reverse Capacitance %s - 32 PF V,,=28.0 V, F=l .O MHz 2.0 .O V, 80 us Pulse Power Gain GP 13 - dB V,,=28.0 V, I,,=400 mA, P,,=80.0 W, F=175 MHz Drain Efficiency % 60 - % V,,=28.0 V. I,,=400 mA, P,,=80.0 W, F=175 MHz VSWR-T - 3O:l - V,,=28.0 V, I,,=400 mA, P,,,r=80.0 W, F=175 MHz Load Mismatch Tolerance Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (BOO) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 DU2880T RF MOSFET Power Transistor, 8OW, 28V v2.00 Typical Broadband Performance EFFICIENCY V,,=28 Curves GAIN vs FREQUENCY vs FREQUENCY V I,,=400 V,,=28 mA PO,,=80 W V I,,=400 mA P,,,=80 W 25 I 10 50s 25 100 50 FREQUENCY 25 175 150 V I,,=400 POWER OUTPUT I,,=400 mA 120 r 150 175 (MHz) vs SUPPLY VOLTAGE mA F=175 MHz P,,=3.0 W 120 I loo - 100 s 5 100 FREQUENCY POWER OUTPUT vs POWER INPUT V,,=28 50 (MHz) 5 80 80. e f$ 60 B 40 3 2 20 0 1 0.1 0.2 0.3 1 2 3 4 5 I 13 15 20 25 SUPPLY VOLTAGE POWER INPUT(W) 30 33 (V) Specifications Subject !o Change Without Notrce. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 D Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, DU2880T 8OW, 28V v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z LOAD (OHMS) 30 5.4 - j 4.4 5.7 + j 4.7 50 2.5 - j 4.4 3.4 + j 3.5 100 l.S-j3.4 2.4 + j 2.4 175 0.7 - j 1.2 1.7 + j 0.8 V,,=28 V, I,,=400 mA, P,,,.=80 Watts Z,, is the se+ equivalent input impedance of the device from gate to source. Z LOAD is the optimum series equivalent load impedance as measured from drain to ground. RF Test Fixture VGS VDS J3 J4 R2 1 Cl2 VDS = 2s VOLTS IW=4oomA 35. - IC” L4 -! RF OUT RF IN Jl Cl PARTS LIST Cl ,c3 TRIMMER c2.c9,c10 CAPACITOR 5@F CGl CAPACITOR 10oD~F 1 CAPACITOR C5 MONOLITHIC c&c9 TRIMMER CIRCUIT CAPACITOR C7 CAPACITOR Cl2 ELECTROLYTIC Ll NO. 12 AWG COPPER 4-4opF CAPACITOR 0.01 UF S-~BOPF 15pF CAPACITOR 5&F 50 VOLT WIRE X 1.18’ (LOOP 0.5’) L2 NO, 12 AWG COPPER WIRE X 1’ (LOOP 0.4’) W.L4 8 TURNS OF NO. 18 AWG ENAMEL WIRE ON Y).25-. CLOSE WOUND Specifications Subject to Change Rl RESISTOR 300 OHMS 0.5 WATT I%? RESISTOR 27K OHMS 0.25 WAlT Cl DU2BBOT BOARD FR4 o.os2 Without Notice. WA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03)3226-1671 Fax +81 (03)3226-1451 n Europe: Tel. +44 (1344)869 595 Fax +44(1344)300 020