UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N80 is universally applied in high efficiency switch mode power supply. FEATURES * 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TF3-T 2N80G-TF3-T 2N80L-TN3-R 2N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-220F TO-252 S: Source www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 G G Pin Assignment 2 3 D S D S Packing Tube Tape Reel 1 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 2.4 A Continuous ID 2.4 A Drain Current 9.6 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 180 mJ Avalanche Energy Repetitive (Note 1) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220F 24 W Power Dissipation PD TO-252 43 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case PACKAGE SYMBOL TO-220F TO-252 TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 5.2 2.85 UNIT °C/W °C/W °C/W °C/W 2 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ID=250µA, VGS=0V MIN TYP MAX 800 △BVDSS/△TJ Reference to 25°C, ID=250µA Drain-Source Leakage Current Gate- Source Leakage Current TEST CONDITIONS IDSS Forward Reverse IGSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw V 0.9 V/°C VDS=800V, VGS=0V VDS=640V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.2A Forward Transconductance (Note 4) gFS VDS=50V, ID=1.2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 4,5) QG VGS=10V, VDS=640V, ID=2.4A Gate to Source Charge (Note 4,5) QGS Gate to Drain Charge (Note 4,5) QGD Turn-ON Delay Time (Note 4,5) tD(ON) Rise Time (Note 4,5) tR VDD=400V, ID=2.4A, RG=25Ω Turn-OFF Delay Time (Note 4,5) tD(OFF) Fall-Time (Note 4,5) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.4A, VGS=0V Reverse Recovery Time (Note 4) tRR IS=2.4A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 4) QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNI T 10 µA 100 +100 nA -100 nA 3.0 5.0 6.3 V Ω S 425 45 5.5 550 60 7.0 pF pF pF 12 2.6 6.0 12 30 25 28 15 35 70 60 65 nC nC nC ns ns ns ns 2.4 A 9.6 A 1.4 V ns µC 4.9 2.65 480 2.0 3 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET Gate Charge Test Circuit Gate Charge Waveforms VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Unclamped Inductive Switching Waveforms Unclamped Inductive Switching Test Circuit 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time 5 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-480.a