DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6H, NNCD6.8H LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUAD TYPE: COMMON ANODE) 5-PIN SUPER SMALL MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) This product series is a low capacitance type diode developed for ESD 2.1 ± 0.1 (Electrostatic Discharge) absorption. Based on the IEC-61000-4-2 test on 1.25 electromagnetic interference (EMI), the diode assures an endurance of no With four elements mounted in the 5-pin super mini mold package, that 0.2 −0 +0.1 0.65 5 2 0.65 circuit protection. 1 1.9 2.0 ± 0.2 less then 30 kV, thus making itself most suitable for external interface product can cope with more high density assembling. +0.1 0.7 0.9 ± 0.1 FEATURES • Base on the electrostatic discharge immunity test (IEC 61000-4-2) 4 0.16 −0.05 3 0 to 0.1 product assures the minimum endurance of 30 kV. • With 4 elements mounted (common anode). Mounted in the SC-88A package, the product cans achiever high density and automatic packaging. ELECTRODE CONNECTION 5 APPLICATIONS 4 • External interface circuit ESD absorption 1. K1: Cathode1 2. A: Anode (common) 3. K2: Cathode2 4. K3: Cathode3 5. K4: Cathode4 • Circuits for Waveform clipper, Surge absorber 1 2 3 MAXIMUM RATINGS (TA = 25°C) ITEM SYMBOL Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg RATING UNIT 200 mW 85 (t = 10 µs, 1 pulse) REMARK Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15419EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2002 NNCD5.6H, NNCD6.8H ELECTRICAL CHARACTERISTICS (TA = 25°C) (A - K1, A - K2, A - K3, A - K4) TYPE No. BREAKDOWN VOLTAGE CAPACITANCE REVERSE DYNAMIC Ct (pF) LEAKAGE IMPEDANCE Note1 IR (µA) VBR (V) NNCD5.6H MIN. MAX. IT (mA) TYP. 5.3 6.3 5 110 Condition ESD VOLTAGE Note2 (kV) Zz (Ω) MAX. VR (V) MAX. IT (mA) 5 2.5 110 5 MIN. 30 6.2 7.1 5 90 f = 1 MHz R = 330 Ω Contact 2 3.5 Notes 1. Tested with pulse (40 ms). 2. Zz is measured IT given a small A.C. signal. 3. Based upon with IEC61000-4-2. 2 Condition C = 150 pF VR = 0 V NNCD6.8H Note3 Data Sheet D15419EJ1V0DS 40 5 discharge NNCD5.6H, NNCD6.8H TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 1. P vs. TA RATING P - Power Dissipation - mW 250 200 150 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Figure 2. IT vs. VBR CHARACTERISTICS Figure 3. IR vs. VBR CHARACTERISTICS 10000 NNCD5.6H 1m 100 µ NNCD5.6H IR - Reverse Leakage - nA NNCD6.8H 10 m 10 µ 1000 NNCD6.8H 100 10 1 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 VBR - Breakdown Voltage - V 2 3 4 5 6 VBR - Breakdown Voltage - V Figure 4. Ct vs. VR CHARACTERISTICS 120 100 Ct - Capacity between pins - pF IT - On-state Current - A 100 m 80 NNCD5.6H 60 40 NNCD6.8H 20 0 0 1 2 3 4 5 6 VR - Reverse Voltage - V Data Sheet D15419EJ1V0DS 3 NNCD5.6H, NNCD6.8H Figure 5. SURGE RVERSE POWER RATING TA = 25˚C Non-repetitive PRSM PRSM - Surge Reverse Power - W 10000 1000 tr NNCD[ ]H 100 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tr - Pulse Width - s Figure 6. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Zth - Transient Thermal Impedance - °C/W 1000 625 oC/W NNCD[ ]H 100 10 1 0.001 0.01 0.1 1 Time - s 4 Data Sheet D15419EJ1V0DS 10 100 1000 NNCD5.6H, NNCD6.8H • The information in this document is current as of April, 2003. The information is subject to change without notice. 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