DATA SHEET ESD NOISE CLIPPING DIODE NNCD6.8RG LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE) 5-PIN MINI MOLD PACKAGE DIMENSION (Unit: mm) DESCRIPTION is a low capacitance type diode 2.8 ± 0.2 developed for ESD (Electrostatic Discharge) absorption. Based +0.1 1.5 0.65 −0.15 on the IEC61000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less then 8 kV, the high-speed data communication bus such as USB. 0.95 5 2 0.95 This product series is the most suitable for ESD absorption in 1 1.9 2.9 ± 0.2 and capacitance is small with 10 pF between the terminal. +0.1 NNCD6.8RG 0.32 −0.06 The With four elements mounted in the 5-PIN mini mold package, 3 4 +0.1 0 to 0.1 the product assures the minimum endurance of 8 kV. 0.16 −0.06 FEATURES • Base on the electrostatic discharge immunity test (IEC 61000-4-2), 0.8 1.1 to 1.4 the product can cope with more high density assembling. • Capacitance: 10 pF (at VR = 0 V, f = 1 MHz) between the terminal The low capacitance can realize the excellent frequency characteristic. • With four elements in the mini mold package, the products can achieve ELECTRODE CONNECTION high density and automatic packaging. 5 4 APPLICATIONS 1: 2: 3: 4: 5: • External interface circuit ESD absorption in the high-speed data communication bus such as USB. 1 2 K1 A K2 K3 K4 Cathode 1 Anode (common) Cathode 2 Cathode 3 Cathode 4 3 MAXIMUM RATINGS (TA = 25°C) Item Symbol Power Dissipation P Surge Reverse Power PRSM Junction Temperature Storage Temperature Tj Tstg Rating Unit 200 mW 2 (t = 10 µs 1 pulse) Remark Total W 150 o −55 to +150 o C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15990EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan The mark ! shows major revised points. 2002 NNCD6.8RG ELECTRICAL CHARACTERISTICS (TA = 25 °C (A to K1, A to K2, A to K3, A to K4) ) TYPE No. Breakdown Voltage Note 1 Capacitance Reverse Ct (pF) Leakage VBR (V) Dynamic Impedance IR (µA) MIN. MAX. IT (mA) TYP. Condition MAX. ESD Voltage Note 2 Note 3 (kV) Zz (Ω) VR (V) MAX. IT (mA) MIN. Condition C = 150 pF R = 330 Ω VR = 0 V NNCD6.8RG 6.2 7.1 5 2 10 f = 1 MHz 3.5 40 5 8 Contact discharge Notes 1. tested with pulse (40 ms) 2. Zz is measured at IT given a small A.C. signal. 3. Biased upon with IEC 61000-4-2 2 Data Sheet D15990EJ2V0DS NNCD6.8RG TYPICAL CHARACTERISTICS (TA = 25°°C) Figure 2. IT -VBR CHARACTERISTICS Figure 1. POWER DISSIPATION vs. (A-K1, A-K2, A-K3, A-K4) AMBIENT TEMPERATURE 100 P - Power Dissipation (mW) 250 IT - On state Current (mA) 200 150 100 50 0 0 25 50 75 100 125 150 10 1 0.1 TA - Ambient Temperature (°C) 0.01 6 6.5 7 VBR - Breakdown Voltage (V) Figure 3. ZZ - IT Dynamic Impedance ZZ (Ω) 1000 100 10 1 0.1 1 10 100 Current IT (mA) Figure 4. Ct - VR CHARACTERISTICS between terminal (pF) Ct - Capacitance 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VR - Reverse Voltage (V) Data Sheet D15990EJ2V0DS 3 NNCD6.8RG Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Zth - Transient Thermal Impedance (°C/W) 10000 1000°C/W 1000 100 10 1 0.001 0.01 0.1 1 10 100 1000 Time t (s) Figure 6. SURGE REVERSE POWER RATINGS 100 TA = 25˚C Non - Repetitive PRSM PRSM - Surge Non - Reverse Power (W) ★ 10 tT 1 0.1 0.001 0.01 0.1 tT - Pulse Width (ms) 4 Data Sheet D15990EJ2V0DS 1 10 NNCD6.8RG [MEMO] Data Sheet D15990EJ2V0DS 5 NNCD6.8RG • The information in this document is current as of September, 2002. 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