DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING (Unit: mm) • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1 0.65 –0.15 1.5 TYP. QUALITY GRADE Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Electronics Corporation to know the specification of quality grade on the devices and its recommended applications. +0.1 3 1 0.4 –0.05 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Marking Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range .1 1.1 to 1.4 +0.1 0.16 –0.06 0.3 TYP. 2.9 ±0.2 0.95 0.95 TYP. TYP. 0.4 +0.1 –0.05 2.8 ±0.2 1. Emitter 2. Base 3. Collector VCBO VCEO VEBO IC PT Tj Tstg −60 −50 −5.0 −100 200 150 −55 to +150 V V V mA mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO −0.1 µA VCB = −60 V, IE = 0 A Emitter Cutoff Current IEBO −0.1 µA VEB = −5.0 V, IC = 0 A DC Current Gain hFE Collector Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance 200 −0.18 −0.3 V IC = −100 mA, IB = −10 mA −0.58 −0.62 −0.68 V VCE = 6.0 V, IC = −1.0 mA VCE(sat) VBE VCE = −6.0 V, IC = −1.0 mA 90 600 fT 180 MHz Cob 4.5 pF Note VCE = −6.0 V, IE = 10 mA VCE = −10 V, IE = 0 A, f = 1.0 MHz Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% hFE CLASSIFICATION Marking M4 M5 M6 M7 hFE 90 to 180 135 to 270 200 to 400 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17119EJ2V0DS00 (2nd edition) (Previous No. TC-1479B) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. c 1984 2SA812 TA = 7 5 °C TYPICAL CHARACTERISTICS (TA = 25°C) IC = 10 A • IS 2 Data Sheet D17119EJ2V0DS 2SA812 TA = 75°C 50°C 25°C 0°C −25°C µs µs Data Sheet D17119EJ2V0DS 3 2SA812 • The information in this document is current as of March, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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