DATA SHEET INTEGRATED LOAD SWITCH µ PA1981 N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.32 +0.1 –0.05 +0.1 0.65 –0.15 2.8 ±0.2 This load switch integrated a small N-Channel MOS FET (Q1), which drives a large P-Channel MOS FET (Q2) in one tiny package (SC-95). 0 to 0.1 FEATURES 0.95 • VS2D21 = 0.2 V MAX. (VS2S1 = 5.0 V, ID2 = −2.8 A, RD2S2(on)1 = 70 mΩ) 0.65 0.95 1.9 • VS2D22 = 0.2 V MAX. (VS2S1 = 2.5 V, ID2 = −1.9 A, RD2S2(on)2 = 105 mΩ) 0.4 power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed. 0.16 +0.1 –0.06 1.5 The µ PA1981 is a N-Channel/P-Channel MOS FET pair for compact 0.9 to 1.1 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE µ PA1981TE SC-95 (Mini Mold Thin Type) Marking: TZ PIN CONNECTION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Source2 to Source1 Input Voltage Range VS2S1 2.5 to 8.0 V Gate1 to Source1 On Voltage Range VG1S1 1.5 to 7.0 V Drain2 Current (DC) Note1 Drain2 Current (pulse) Note2 Total Power Dissipation Note1 6 5 4 ID2(DC) −2.8 A −10.0 1. S1(Q1) 4. S2(Q2) ID2(pulse) A 2. D2(Q2) 5. G1(Q1) PT 1.0 W 3. D2(Q2) 6. G2/D1 150 °C Channel Temperature Tch Storage Temperature Tstg −55 to +150 2 Notes 1. Mounted on FR-4 Board of 2500 mm x 1.6 mm, t ≤ 5 sec °C 1 2 3 2. PW ≤ 10 µs, Duty Cycle ≤ 1% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17263EJ1V0DS00 (1st edition) Date Published July 2004 NS CP(K) Printed in Japan 2004 µ PA1981 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT OFF CHARACTERISTICS Q2-S2 to D2 Leakage Current IS2D2 VS2D2 = 8.0 V, VG1S1 = 0 V 1.0 µA Q1-D1 to S1 Leakage Current ID1S1 VD1S1 = 8.0 V, VG1S1 = 0 V 1.0 µA ON CHARACTERISTICS Q2-S2 to D2 Voltage Note Q2-Static On-Resistance Q2-S2 to D2 Current Note VS2D21 VS2S1 = 5.0 V, VG1S1 = 3.3 V, ID2 = −2.8 A 0.15 0.2 V VS2D22 VS2S1 = 2.5 V, VG1S1 = 3.3 V, ID2 = −1.9 A 0.15 0.2 V RD2S2(on)1 VG2S2 = −5.0 V, ID2 = −2.8A 52 70 mΩ RD2S2(on)2 VG2S2 = −2.5 V, ID2 = −1.9 A 76 105 mΩ Note IS2D21 VS2D2 = 0.2 V, VS2S1 = 5.0 V, VG1S1 = 3.3 V 2.8 A IS2D22 VS2D2 = 0.2 V, VS2S1 = 2.5 V, VG1S1 = 3.3 V 1.9 A Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% CIRCUIT1 EXAMPLE OF APPLICATION CIRCUIT µ PA1981 Q2 S2 D2 +Vin R1 G2/D1 Ci G1 Q1 Co LOAD VON/OFF S1 GND RECOMMENDATION OF CIRCUIT1 Co ≤ 1 µF for applications R1 is required to turn Q2 off. Select R1 in the range of 10 to 470 kΩ. 2 Data Sheet G17263EJ1V0DS µ PA1981 TYPICAL CHARACTERISTICS (TA = 25°C) ON-STATE VOLTAGE (Pch) vs. DRAIN2 CURRENT ON-STATE VOLTAGE (Pch) vs. CHANNEL TEMPERATURE 0.20 0.16 VS2D2 - On-state Voltage (Pch) - V VS2D2 - On-state Voltage (Pch) - V 0.20 Tch = 125°C 0.12 25°C 0.08 Pulsed VS2S1 = 5.0 V VG1S1 = 1.5 to 7.0 V 0.04 Tch = 125°C 0.16 25°C 0.12 0.08 Pulsed VS2S1 = 2.5 V VG1S1 = 1.5 to 7.0 V 0.04 0 0 0 -0.5 -1 -1.5 -2 -2.5 0 -3 ID2 - Drain2 (Pch) Current - A -1 -1.5 -2 -2.5 -3 ID2 - Drain2 (Pch) Current - A ON-STATE RESISTANCE (Pch) vs. INPUT VOLTAGE ON-STATE RESISTANCE (Pch) vs. CHANNEL TEMPERATURE 14 12 10 RD2S2(on) - Static On-Resistance - mΩ Pulsed ID2 = −2.8 A VG1S1 = 1.5 to 7.0 V 8 6 4 2 Pulsed VG1S1 = 1.5 to 7.0 V 12 VS2S1 = 2.5 V ID2 = −1.9 A 10 8 6 VS2S1 = 5.0 V ID2 = −2.8 A 4 2 0 0 1 2 3 4 5 6 7 8 -50 VS2S1 - Source2 to Source Input Voltage - V -25 0 25 50 75 100 125 150 Tch - Channel Temperature - °C TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth- Transient Thermal Resistance - °C/W RD2S2(on) - Static On-Resistance - mΩ -0.5 100 10 1 Single pulse Mounted on FR-4 board of 2500 mm2 x 1.6 mm 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G17263EJ1V0DS 3 µ PA1981 • The information in this document is current as of July, 2004. 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