Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 Unit 0.15–0.05 Ratings 0 to 0.1 Symbol 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : AX (Ta=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –8V, IE = 0 Emitter cutoff current IEBO VEB = –3V, IC = 0 hFE1* VCE = –1V, IC = –10mA 50 30 Forward current transfer ratio 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.9±0.1 ● 0.425 typ max Unit – 0.1 µA – 0.1 µA 150 hFE2 VCE = –1V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 1500 MHz Collector output capacitance Cob VCB = –5V, IE = 0, f = 1MHz 1 pF Turn-on time ton (Note 1) Next page 12 ns Turn-off time toff (Note 1) Next page 20 ns Storage time tstg (Note 1) Next page 19 ns *h FE1 – 0.1 800 – 0.2 V Rank classification Rank Q R hFE1 50 ~ 120 90 ~ 150 1 Transistor 2SA1739 Switching time measurement circuit ton, toff Test Circuit VBB VCC=–1.5V VBB=–10V VCC=–3V 2kΩ 62Ω 508Ω 30Ω Vout 52Ω 0.1µF Vin Vout 34Ω 51Ω 51Ω Vin 240 Collector power dissipation PC (mW) 0.1µF Vin PC — Ta tstg Test Circuit 0 10% Vin 90% 90% Vout 0 90% 90% Vout 10% toff Vin=9.0V ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) VCE(sat) — IC Ta=25˚C IB=–600µA –50 –500µA –400µA –40 –300µA –30 –200µA Collector to emitter saturation voltage VCE(sat) (V) –100 –60 Collector current IC (mA) VBE(sat) — IC IC/IB=10 –30 –10 Ta=75˚C 25˚C –25˚C –3 –1 – 0.3 –20 –100µA –10 – 0.1 –2 –4 –6 –8 –10 –12 – 0.01 –1 –3 –10 –30 Transition frequency fT (MHz) Forward current transfer ratio hFE 2000 160 120 80 25˚C –25˚C 800 400 0 –3 –10 –30 Collector current IC (mA) –100 1 3 10 –10 –30 –100 –300 –1000 Cob — VCB 1200 Ta=75˚C –3 2.4 1600 –1 – 0.01 –1 Collector current IC (mA) VCB=–10V f=200MHz Ta=25˚C VCE=–10V 2 –100 –300 –1000 fT — IE 2400 200 Ta=–25˚C 25˚C 75˚C –1 Collector current IC (mA) hFE — IC 240 0 – 0.1 –0.3 –3 – 0.03 Collector to emitter voltage VCE (V) 40 –10 – 0.1 Collector output capacitance Cob (pF) 0 IC/IB=10 –30 – 0.3 – 0.03 0 –100 Base to emitter saturation voltage VBE(sat) (V) IC — VCE 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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