2SA2124 Ordering number : EN7920A SANYO Semiconductors DATA SHEET 2SA2124 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features • • • • Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO --30 --30 V VEBO IC --6 V --2 A ICP IB --5 A PC Junction Temperature Tj Storage Temperature Tstg --400 V mA Mounted on a ceramic board (450mm2✕0.8m) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Marking : AX Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 80509 TK IM TC-00002048 / D2004EA TS IM TB-00000072 No.7920-1/4 2SA2124 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE(1) Gain-Bandwidth Product hFE(2) fT Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Output Capacitance Cob Turn-On Time Storage Time ton tstg Fall Time tf Package Dimensions unit : mm (typ) 7007B-004 Ratings Conditions min typ VCB=--30V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--100mA VCE=--2V, IC=--1.5A Unit max 200 --0.1 μA --0.1 μA 560 65 VCE=--10V, IC=--300mA IC=--1.5A, IB=--75mA 440 IC=--1.5V, IB=--75mA IC=--10μA, IE=0A IC=--1mA, RBE=∞ IE=--10μA, IC=0A MHz --0.2 --0.4 V --0.95 --1.2 V --30 V --30 V --6 V VCB=--10V, f=1MHz See specified Test Circuit. 17 pF 45 ns See specified Test Circuit. 200 ns See specified Test Circuit. 23 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT IC OUTPUT IB2 VR 50Ω RB + 220μF VBE=5V RL + 470μF VCC= --12V IC= --20IB1=20IB2= --0.5A No.7920-2/4 2SA2124 IC -- VCE --25 0 --4 IC -- VBE --2.0 mA --20 VCE= --2V --15mA --10mA --1.4 --1.2 --1.0 --5mA --0.8 --0.6 --2mA --1.5 --1.0 Ta= 75°C 25°C --25 °C --1.6 mA mA Collector Current, IC -- A Collector Current, IC -- A --1.8 --3 5m A --3 0m A --2.0 --0.5 --0.4 --0.2 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V 0 0 --2.0 --0.4 --0.6 --0.8 VCE= --10V DC Current Gain, hFE Ta=75°C 25°C --25°C 2 100 7 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 100 7 5 --0.01 3 2 7 --1.0 2 3 5 7 --10 2 Collector-to-Base Voltage, VCB -- V 3 5 5 7 --1.0 2 3 IT07251 2 --0.1 7 C 5° =7 C Ta 5° --2 5 3 25 2 2 3 7 --1.0 2 3 ASO <10μs 1m s 10 s IC= --2A 2 0μ ms Di 10 ssi 0m p s DC ation op Lim era ite tio d n 3 s --1.0 7 5 0μ 2 mi Li --0.1 7 5 ted Collector Current, IC -- A 5 IT07253 /B 5 5 50 25°C 3 ICP= --5A 3 75°C 2 10 2 Ta= --25°C 7 --0.1 Collector Current, IC -- A --10 7 5 --1.0 5 °C S Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 3 IT07252 IC / IB=20 7 2 VCE(sat) -- IC --0.01 --0.01 VBE(sat) -- IC 3 7 --0.1 IC / IB=20 3 5 5 5 5 3 3 Collector Current, IC -- A f=1MHz 2 2 IT07250 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 5 Cob -- VCB 7 10 --0.1 7 Gain-Bandwidth Product, f T -- MHz 5 5 --0.01 IT07249 f T -- IC 1000 VCE= --2V 3 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 7 --0.2 IT07248 3 2 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT07254 Tc=25°C Single Pulse --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 IT07255 No.7920-3/4 2SA2124 PC -- Ta 1.4 PC -- Tc 4.0 1.3 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 3.5 M ou 1.2 nt 1.0 ed on ac er am ic 0.8 bo ar 0.6 d (4 50 m 0.4 m2 ✕ 0. 8m m ) 0.2 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT07256 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT08355 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2009. Specifications and information herein are subject to change without notice. PS No.7920-4/4