F5H2101 Ordering number : ENA0725 SANYO Semiconductors DATA SHEET F5H2101 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. The F5H2101 consists of two chips which are equivalent to the 2SA2210 encapsulated in a package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V --15 A PW=100ms, duty cycle≤1% --20 A PW≤10µs, duty cycle≤10% --25 A --3 A 2 W Collector Current IC Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 30 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 53007FA TI IM TC-00000620 No. A0725-1/5 F5H2101 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max Collector Cutoff Current ICBO VCB=--40V, IE=0A --10 µA Emitter Cutoff Current IEBO hFE VEB=--4V, IC=0A --10 µA DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage fT VCE=--2V, IC=--1A VCE=--10V, IC=--1A Cob VCB=--10V, f=1MHz 215 VCE(sat) IC=--7A, IB=--350mA IC=--7A, IB=--350mA --200 Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg Storage Time Fall Time tf 150 450 140 IC=--100µA, IE=0A IC=--1mA, RBE=∞ IE=--100µA, IC=0A See specified Test Circuit. MHz pF --500 mV --1.2 V --50 V --50 V --6 V 60 ns See specified Test Circuit. 270 ns See specified Test Circuit. 20 ns Note : The specifications shown above are for each individual transistor. Package Dimensions Electrical Connection unit : mm (typ) 7526-001 2 4.5 10.0 3.2 1 TR1 2.8 3 TR2 7.2 3.5 4 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) 16.0 5 Top view 3.6 2.4 14.0 0.9 0.5 12 2.54 3 45 0.7 2.75 2.4 1.27 1.27 2.54 1 : Base1(TR1) 2 : Emitter1(TR1) 3 : Collector(Common) 4 : Base2(TR2) 5 : Emitter2(TR2) SANYO : TO-220FI5H Switching Time Test Circuit PW=20µs D.C.≤1% IB1 IB2 OUTPUT INPUT VR 50Ω RB + 100µF VBE=5V RL + 470µF VCC= --20V IC=20IB1= --20IB2= --7A No. A0725-2/5 F5H2101 IC -- VCE --20 From top --1600mA --1400mA --1200mA --1000mA --900mA --800mA --16 --14 --12 A --200m 0 --70 --10 m --400 A mA m 0 0 --60 --50 mA A --100mA --50mA --8 --6 --20mA --4 From top --500mA --450mA --400mA --350mA --300mA --250mA --9 Collector Current, IC -- A Collector Current, IC -- A --18 IC -- VCE --10 0mA --30 --8 --7 --6 0 --10 A 0m m 00 --2 A --50mA 5 --1 --5 --30mA --4 --20mA --3 --10mA --2 --2 --1 IB=0mA 0 0 --0.25 --0.50 --0.75 --1.00 --1.25 --1.50 --1.75 Collector-to-Emitter Voltage, VCE -- V IB=0mA 0 --2.00 0 --0.1 --0.2 --0.3 --0.4 --0.5 5 DC Current Gain, hFE --15 75 °C 25° C --10 --0.9 --1.0 IT12152 VCE=2V 7 Ta=75°C 25°C --25°C --20 Ta = --0.8 hFE -- IC 1000 VCE=2V 3 2 100 7 5 3 °C --5 --0.6 --0.7 Collector-to-Emitter Voltage, VCE -- V IT12151 IC -- VBE --25 Collector Current, IC -- A mA --25 2 0 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 3 0V -2. =E VC 2 100 --1.0V --0.7V V --0.2 V --0.5 7 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- A 2 100 7 5 3 2 3 2 100 5 7 --1.0 2 3 5 7 --10 3 5 7 --0.1 2 Collector-to-Base Voltage, VCB -- V 3 5 7 IT12157 2 3 5 7 --1.0 2 3 5 7 --10 IT12156 VCE(sat) -- IC IC / IB=20 5 3 2 --0.1 C 5° --2 7 5 3 2 --0.01 7 3 2 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 5 IT12154 3 7 7 2 3 5 --1.0 1000 2 5 7 --10 VCE=10V IT12155 f=1MHz 5 --0.1 2 3 fT -- IC 10 --0.01 5 Cob -- VCB 2 5 7 --1.0 7 5 5 7 --0.1 2 3 1000 7 10 --0.01 2 3 5 7 --0.1 Collector Current, IC -- A Ta=25°C 5 3 IT12153 hFE -- IC 1000 DC Current Gain, hFE 10 --0.01 2 --1.4 75 °C --0.6 Ta = --0.4 25 °C --0.2 Gain-Bandwidth Product, fT -- MHz 0 C Ta= --25° ° 75 C 25°C 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT12158 No. A0725-3/5 F5H2101 VCE(sat) -- IC 2 VBE(sat) -- IC 3 IC / IB=20 5° C 7 5 3 5° C --2 2 --0.1 °C 25 7 5 3 Ta= --25°C 2 75°C 25°C --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Ta= --25°C 7 75°C 5 25°C 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 IT12160 PC -- Ta 2.5 ICP= --25A 3 2 --1.0 Collector Current, IC -- A Forward Bias A S O 5 2 2 --0.01 5 7 --10 2 3 IT12159 Collector Current, IC -- A 10 s 1m 0m s 3 2 s 0µ 10 Collector Dissipation, PC -- W 0 =5 PT ms IC= --15A --10 7 5 DC op --1.0 7 5 on ati er Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V --1.0 Ta =7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V IC / IB=50 3 2 --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.1 2 3 2.0 1.5 No he at sin k 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT12165 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12166 PC -- Tc 35 Collector Dissipation, PC -- W 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12167 No. A0725-4/5 F5H2101 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of May, 2007. Specifications and information herein are subject to change without notice. PS No. A0725-5/5