NSBA114EF3T5G Series Preferred Devices Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−1123 package which is designed for low power surface mount applications. Features • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−1123 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices http://onsemi.com PNP SILICON DIGITAL TRANSISTORS PIN 1 BASE (INPUT) PIN 3 COLLECTOR (OUTPUT) R1 R2 PIN 2 EMITTER (GROUND) 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating 1 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 2 SOT−1123 CASE 524AA STYLE 1 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. xM x M G or G = Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device NSBA114EFT5G Package SOT−1123 (Pb−Free) Shipping† 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 September, 2008 − Rev. 2 1 Publication Order Number: NSBA114EF3/D NSBA114EF3T5G Series THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C PD Thermal Resistance (Note 1) Junction-to-Ambient RqJA Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C PD Max Unit 254 2.0 mW mW/°C 493 °C/W 297 2.4 mW mW/°C Thermal Resistance (Note 2) Junction-to-Ambient RqJA 421 °C/W Thermal Resistance (Note 1) Junction-to-Lead 3 RqJL 193 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 1. FR−4 @ 100 2. FR−4 @ 500 mm2, mm2, 1 oz. copper traces, still air. 1 oz. copper traces, still air. ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device Marking* R1 (k) R2 (k) NSBA114EF3T5G F (0°) 10 10 NSBA124EF3T5G Y (0°) 22 22 NSBA144EF3T5G E (0°) 47 47 NSBA114YF3T5TG K (0°) 10 47 NSBA123TF3T5G F (90°) 2.2 ∞ NSBA143EF3T5G A (90°) 4.7 4.7 NSBA143ZF3T5G E (90°) 4.7 47 NSBA123JF3T5G J (90°) 2.2 47 NSBA144WF3T5G D (90°) 47 22 NSBA114TF3T5G L (90°) 10 ∞ NSBA115TF3T5G Q (90°) 100 ∞ Package Shipping† SOT−1123 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBA114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 4.0 0.9 1.5 0.1 0.18 0.2 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 15 80 80 80 160 60 100 140 140 350 27 140 140 140 250 − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − Characteristic OFF CHARACTERISTICS NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA114TF3T5G NSBA143EF3T5G NSBA115T53T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA115TF3T5G/NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA114TF3T5G Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YF3T5G/NSBA123TF3T5G/NSBA123JF3T5G NSBA144WF3T5G (IC = 10 mA, IB = 1 mA) NSBA143ZF3T5G/NSBA143EF3T5G/NSBA114TF3T5G (IC = 10 mA, IB = 5 mA) NSBA115TF3T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) VOL NSBA114TF3T5G NSBA114EF3T5G NSBA124EF3T5G NSBA114YF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144EF3T5G NSBA144WF3T5G NSBA115TF3T5G VOH Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBA114EF3T5G/NSBA124EF3T5G/NSBA144EF3T5G NSBA114YEF3T5G/NSBA143ZF3T5G/NSBA123JF3TG NSBA144WF3T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBA123TF3T5G/NSBA143EF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc Vdc NSBA114EF3T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor Symbol Min Typ Max Unit R1 7.0 7.0 15.4 32.9 7.0 1.5 3.3 3.3 1.54 32.9 70 10 10 22 47 10 2.2 4.7 4.7 2.2 47 100 13 13 28.6 61.1 13 2.9 6.1 6.1 2.86 61.1 130 kW 0.8 0.17 − 1.0 0.21 − 1.2 0.25 − 0.055 0.038 1.7 0.1 0.047 2.1 0.185 0.056 2.6 NSBA114TF3T5C NSBA114EF3T5G NSBA124EF3T5G NSBA144EF3T5G NSBA114YF3T5TG NSBA123TF3T5G NSBA143EF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G NSBA115TF3T5G Resistor Ratio R1/R2 NSBA114EF3T5G/NSBA124EF3T5G/ NSBA144EF3T5G/NSBA143EF3T5G NSBA114YF3T5TG NSBA123TF3T5G/NSBA114TF3T5G/ NSBA115TF3T5G NSBA143ZF3T5G NSBA123JF3T5G NSBA144WF3T5G http://onsemi.com 4 NSBA114EF3T5G Series 1.0 1000 IC/IB = 10 VCE = 10 V hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EF3T5G TA = 25°C TA = 150°C 0.10 TA = −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 100 150°C 25°C −55°C 10 1.0 0.1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 1. VCE(sat) vs. IC Figure 2. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 5 10 15 20 25 30 35 40 45 50 10 150°C 1.0 −55°C 0.1 25°C 0.01 0 1 REVERSE BIAS VOLTAGE (V) 2 25°C −55°C 1.0 150°C 0 5 10 4 Figure 4. Output Current vs. Input Voltage 10 0.1 3 Vin, INPUT VOLTAGE (V) Figure 3. Output Capacitance Vin, INPUT VOLTAGE (V) COBO, OUTPUT CAPACITANCE (pF) 2.4 0.8 100 15 20 25 30 35 IC, COLLECTOR CURRENT (mA) 40 45 Figure 5. Input Voltage vs. Output Current http://onsemi.com 5 50 5 NSBA114EF3T5G Series PACKAGE DIMENSIONS SOT−1123 CASE 524AA−01 ISSUE B −X− D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− 1 E 3 2 b e 0.08 (0.0032) X Y DIM A b b1 c D E e HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.22 0.28 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 −−− 0.40 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.004 0.003 0.030 0.022 0.014 0.037 0.002 INCHES NOM 0.015 0.009 0.006 0.005 0.031 0.024 −−−− 0.039 0.004 MAX 0.016 0.011 0.008 0.007 0.033 0.026 0.016 0.041 0.006 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.35 0.30 0.25 0.40 0.90 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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