NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EDXV6T1 series, two BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. (3) (2) R1 (1) R2 Q1 Q2 R2 (4) R1 (5) (6) NSBC114EDXV6T1 Features • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Lead−Free Solder Plating These are Pb−Free Devices MARKING DIAGRAM MAXIMUM RATINGS 1 (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 357 (Note 1) 2.9 (Note 1) mW mW/°C Thermal Resistance, Junction-to-Ambient RqJA 350 (Note 1) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit PD 500 (Note 1) 4.0 (Note 1) mW mW/°C RqJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 °C Collector Current SOT−563 CASE 463A PLASTIC xx M G 1 xx = Device Code (Refer to Page 2) M = Date Code G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation; TA = 25°C Derate above 25°C Total Device Dissipation; TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range ORDERING INFORMATION Device NSBC1xxxDXV6T1 Shipping † SOT−563* 4000/Tape & Reel NSBC1xxxDXV6T1G SOT−563* 4000/Tape & Reel NSBC1xxxDXV6T5 1. FR−4 @ Minimum Pad Package SOT−563* 8000/Tape & Reel NSBC1xxxDXV6T5G SOT−563* 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 6 1 Publication Order Number: NSBC114EDXV6/D NSBC114EDXV6T1, NSBC114EDXV6T5 DEVICE MARKING, ORDERING, AND RESISTOR VALUES Device† Package* Marking R1 (kW) R2 (kW) NSBC114EDXV6T1 SOT−563 7A 10 10 NSBC124EDXV6T1 SOT−563 7B 22 22 NSBC144EDXV6T1 SOT−563 7C 47 47 NSBC114YDXV6T1 SOT−563 7D 10 47 NSBC114TDXV6T1 (Note 2) SOT−563 7E 10 ∞ NSBC143TDXV6T1 (Notes 2) SOT−563 7F 4.7 ∞ NSBC113EDXV6T1 (Note 2) SOT−563 7G 1.0 1.0 NSBC123EDXV6T1 (Notes 2) SOT−563 7H 2.2 2.2 NSBC143EDXV6T1 (Notes 2) SOT−563 7J 4.7 4.7 NSBC143ZDXV6T1 (Notes 2) SOT−563 7K 4.7 47 NSBC124XDXV6T1 (Notes 2) SOT−563 7L 22 47 NSBC123JDXV6T1 (Note 2) SOT−563 7M 2.2 47 NSBC115EDXV6T1 (Notes 2) SOT−563 7N 100 100 NSBC144WDXV6T1 (Notes 2) SOT−563 7P 47 22 †The “G’’ suffix indicates Pb−Free package available. *This package is inherently Pb−Free. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSBC114EDXV6T1, NSBC114EDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Symbol Min Typ Max Unit hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 VOH 4.9 − − Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) NSBC113EDXV6T1/NSBC123EDXV6T1 (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, (VCC = 5.0 V, (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VB = 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio VOL NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144EDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 Vdc Vdc NSBC113EDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC143ZDXV6T1 NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 NSBC114EDXV6T1/NSBC124EDXV6T1/ NSBC144EDXV6T1/NSBC115EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1/NSBC143TDXV6T1 NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC144WDXV6T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 R1/R2 NSBC114EDXV6T1, NSBC114EDXV6T5 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 −50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 NSBC114EDXV6T1, NSBC114EDXV6T5 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114EDXV6T1 TA=−25°C 25°C 0.1 75°C 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C 1 0.1 0.01 0.001 50 TA=−25°C 10 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 NSBC114EDXV6T1, NSBC114EDXV6T5 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS — NSBC124EDXV6T1 IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 VCE = 10 V 1 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 NSBC114EDXV6T1, NSBC114EDXV6T5 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS — NSBC144EDXV6T1 1 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 NSBC114EDXV6T1, NSBC114EDXV6T5 1 300 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NSBC114YDXV6T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75°C VCE = 10 250 25°C 200 −25°C 150 100 50 0 80 1 2 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 10 NSBC114EDXV6T1, NSBC114EDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 1 e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 5 4 2 3 E −Y− HE b 65 PL 0.08 (0.003) DIM A b C D E e L HE C M X Y MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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