Transistor 2SB0710, 2SB0710A (2SB710, 2SB710A) Silicon PNP epitaxial planer type For general amplification Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A) Unit: mm ■ Features Collector to 2SB0710 emitter voltage 2SB0710A –25 –50 VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Symbol Collector to base 2SB0710 voltage 2SB0710A Collector to emitter 2SB0710 voltage 2SB0710A Emitter to base voltage +0.1 Marking symbol : Conditions ICBO VCB = –20V, IE = 0 VCBO IC = –10µA, IE = 0 VCEO IC = –10mA, IB = 0 min C(2SB0710) D(2SB0710A) typ µA V –25 V –50 IE = –10µA, IC = 0 –5 85 hFE2 VCE = –10V, IC = –500mA*2 40 VCE(sat) IC = –300mA, IB = –30mA*2 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz V 340 – 0.35 – 0.6 –1.1 –1.5 200 V V MHz 15 6 *2 FE1 Unit –0.1 –60 VCE = –10V, IC = –150mA*2 *1h max –30 hFE1*1 Collector to emitter saturation voltage 0.4 –0.05 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package VEBO Forward current transfer ratio 1.45 0.95 0.95 1:Base 2:Emitter 3:Collector (Ta=25˚C) Parameter Collector cutoff current 0.1 to 0.3 0.4±0.2 V Emitter to base voltage ■ Electrical Characteristics +0.2 V –60 VCEO 2 Unit –30 VCBO 3 +0.1 2SB0710A 1 0.16 –0.06 2SB0710 base voltage Ratings 0.65±0.15 0 to 0.1 Collector to 2.9 –0.05 (Ta=25˚C) Symbol +0.25 1.5 –0.05 0.8 Parameter 1.9±0.2 ■ Absolute Maximum Ratings +0.2 ● Large collector current IC. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.1 –0.1 ● +0.2 2.8 –0.3 0.65±0.15 pF Pulse measurement Rank classification Marking Symbol Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SB0710 CQ CR CS 2SB0710A DQ DR DS Note.) The Part numbers in the Parenthesis show conventional part number. 1 Transistor 2SB0710, 2SB0710A PC — Ta IC — VCE –700 200 160 –600 –800 120 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –600 80 –400 40 –3mA –2mA –500 –400 –300 –200 –200 –1mA –100 0 60 80 100 120 140 160 0 0 –2 –8 –10 –12 –1 – 0.3 Ta=75˚C – 0.1 –25˚C – 0.03 –30 –10 –3 25˚C –1 – 0.01 Ta=–25˚C 75˚C – 0.1 – 0.003 – 0.03 –10 –30 –100 –300 –1000 – 0.01 –1 Collector current IC (mA) –3 –10 –30 fT — IE Collector output capacitance Cob (pF) VCB=–10V Ta=25˚C 200 160 120 80 40 0 1 3 10 30 Emitter current IE (mA) 100 300 Ta=75˚C 25˚C –25˚C 200 100 –1 –3 –10 Collector current IC (A) VCER — RBE 16 12 8 4 0 –1 –10 400 0 – 0.01 – 0.03 – 0.1 – 0.3 –100 –300 –1000 IE=0 f=1MHz Ta=25˚C 20 –8 500 Cob — VCB 24 –6 VCE=–10V Collector current IC (mA) 240 –4 600 IC/IB=10 – 0.3 –3 –2 Base current IB (mA) hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) –3 – 0.001 –1 0 VBE(sat) — IC IC/IB=10 25˚C –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –10 –4 Forward current transfer ratio hFE 40 –120 Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) –1000 0 Transition frequency fT (MHz) VCE=–10V Ta=25˚C Ta=25˚C 0 2 IC — I B –800 –1200 Collector current IC (mA) Collector power dissipation PC (mW) 240 IC=–2mA Ta=25˚C –100 –80 –60 2SB0710A –40 2SB0710 –20 0 –3 –10 –30 –100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1000 Base to emitter resistance RBE (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR