NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 100 nA Emitter Cutoff Current IEBO VEB = 10V, IC = 0 – – 100 nA DC Current Gain hFE VCE = 5V, IC = 500mA 800 VCE = 5V, IC = 1A 600 – – Gain–Bandwidth Product Output Capacitance 1500 3200 fT VCE = 10V, IC = 50mA – 260 – MHz Cob VCB = 10V, f = 1MHz – 27 – pF Collector Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 20mA – 0.15 0.5 V Base Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 20mA – 0.85 1.2 V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 – – V Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 25 – – V Emitter Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 15 – – V – 0.14 – µs – 1.35 – µs – 0.1 – µs Turn–On Time ton Storage Time tstg Fall Time VCC = 10V, VBE = –5V, 100IB1 = –100IB2 = IC = 700mA, Pulse Width = 20µs, Duty Cycle ≤ 1% tf .271 (6.9) .098 (2.5) .137 (3.5) B C .177 (4.5) E .039 (1.0) .039 (1.0) .122 (3.1) .098 (2.5) .161 (4.1)