NTE2566 (NPN) & NTE2567 (PNP) Silicon Complementary Transistors High Current, High Speed Switch Features: D Low Saturation Voltage D Fast Switching Speed D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Power Dissipation, PC TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit – 0.1 mA 0.1 mA Collector Cutoff Current ICBO VCB = 40V, IE = 0 – Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – DC Current Gain hFE VCE = 2V, IC = 1A 100 – 200 VCE = 2V, IC = 5A 30 – – fT VCE = 5V, IC = 1A – 10 – MHz VCE(sat) IC = 6A, IB = 0.6A – – 0.4 V Gain Bandwidth Product Collector–Emitter Saturation Voltage Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max – 0.1 – – 0.2 – – 1.2 – – 0.4 – – 0.05 – – 0.1 – Unit µs Turn–On Time NTE2566 ton NTE2567 Storage Time NTE2566 tstg IC = 5A, IB1 = 20A, IB2 = –20A, VCC = 20V, Pulse Width = 20µs, µ Duty Cycle ≤ 1% NTE2567 µs µs µs Collector Current Fall Time NTE2566 tf NTE2567 .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .114 (2.9) Max .295 (7.5) .165 (4.2) .669 (17.0) Max B C E .531 (13.5) Min .100 (2.54) µs .059 (1.5) Max NOTE: Tab is isolated µs