NTE NTE394

NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector–Emitter Cutoff Current
Emitter–Base Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICEO
VCE = 300V, IB = 0
–
–
1
mA
ICES
VCE = 500V, VEB = 0
–
–
1
mA
IEBO
VEB = 5V, IC = 0
–
–
1
mA
Collector–Emitter Sustaining Voltage
VCEO(sus)
IC = 30mA, IB = 0, Note 1
400
–
–
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 3A, IB = 0.6A, Note 1
–
–
1.5
V
Base–Emitter ON Voltage
VBE(on)
IC = 3A, VCE = 10V, Note 1
–
–
1.5
V
IC = 0.3A, VCE = 10V
30
150
–
IC = 3A, VCE = 10V
10
–
–
DC Current Gain
hFE
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 1.5%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Small–Signal Current Gain
hfe
Test Conditions
Min
Typ
Max
IC = 0.2A, VCE = 10V, f = 1kHz
30
–
–
IC = 0.2A, VCE = 10V, f = 1MHz
2.5
–
–
Unit
Second Breakdown Unclamped Energy
Es/b
VBE = 20V, RBE = 100Ω, l = 30mH
100
–
–
mJ
Turn–On Time
ton
IC = 1A, IB1 = 100mA, VCC = 200V
–
0.2
–
µs
Turn–Off Time
toff
IC = 1A, IB1 = –IB2 = 100mA,
VCC = 200V
–
0.2
–
µs
.600
(15.24)
.060 (1.52)
.173 (4.4)
C
.156
(3.96)
Dia.
B
C
.550
(13.97)
.430
(10.92)
E
.500
(12.7)
Min
.055 (1.4)
.015 (0.39)
.216 (5.45)
NOTE: Dotted line indicates that
case may have square corners