NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability Applications: D Consumer D Power Supply D Color TV Horizontal Deflection Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Emitter–Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (tp < 5ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Total Device Dissipation (TC = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C Maximum Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector–Emitter Sustaining Voltage Emitter–Base Voltage Symbol ICES IEBO Test Conditions Min Typ Max Unit VCE = 1500V, VBE = 0 – – 1.0 mA VCE = 1500V, VBE = 0, TC = +125°C – – 2.0 mA VEB = 5V, IC = 0 – – 100 µA 700 – – V 10 – – V VCEO(sus) IC = 100mA VEBO IE = 10mA, IC = 0 Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Saturation Voltage VCE(sat) IC = 4.5A, IB = 2A, Note 1 – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 4.5A, IB = 2A, Note 1 – – 1.3 V Current Gain–Bandwidth Product fT VCE = 5V, IC = 100mA, f = 5MHz – 7 – MHz VCC = 140V, IC = 4.5A, hFE = 2.5, LC = 0.9mH, LB = 3µH µ – 7.0 – µs – 0.55 – µs Switching Characteristics (Inductive Load) Storage Time ts Fall Time tf Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle ≤ 1.5%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case