394

NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
TO−3PN Type Package
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO−3PN type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector−Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector−Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage (IC = 0), VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Emitter Sustaining Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
ICEO
VCE = 300V, IB = 0
−
−
1
mA
ICES
VCE = 500V, VEB = 0
−
−
1
mA
IEBO
VEB = 5V, IC = 0
−
−
1
mA
400
−
−
V
VCEO(sus) IC = 30mA, IB = 0, Note 1
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 3A, IB = 0.6A, Note 1
−
−
1.5
V
Base−Emitter ON Voltage
VBE(on)
IC = 3A, VCE = 10V, Note 1
−
−
1.5
V
IC = 0.3A, VCE = 10V
30
150
−
IC = 3A, VCE = 10V
10
−
−
DC Current Gain
hFE
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%.
Rev. 2−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Small−Signal Current Gain
Symbol
hfe
Test Conditions
Min
Typ
Max
IC = 0.2A, VCE = 10V, f = 1kHz
30
−
−
IC = 0.2A, VCE = 10V, f = 1MHz
2.5
−
−
Unit
Second Breakdown Unclamped Energy
Es/b
VBE = 20V, RBE = 100, l = 30mH
100
−
−
mJ
Turn−On Time
ton
IC = 1A, IB1 = 100mA, VCC = 200V
−
0.2
−
s
Turn−Off Time
toff
IC = 1A, IB1 = −IB2 = 100mA,
VCC = 200V
−
0.2
−
s
.614 (15.6)
.189 (4.8)
.787
(20.0)
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
B
.215 (5.45)
C
E